Abstract: A method for decomposing a nitroso compound, comprising: adding an aqueous solution containing hydrogen halide to a liquid to be treated that contains the nitroso compound in such a manner that the hydrogen halide is present in an amount of 2 mol or more and 20 mol or less per mol of a nitroso group in the nitroso compound; and subsequently heating the resulting liquid to be treated at a temperature of not lower that 75° C. and not higher than a boiling point of water under ordinary pressure, thereby an amines are recovered.

Abstract: A method for decomposing a nitroso compound, comprising: adding an aqueous solution containing hydrogen halide to a liquid to be treated that contains the nitroso compound in such a manner that the hydrogen halide is present in an amount of 2 mol or more and 20 mol or less per mol of a nitroso group in the nitroso compound; and subsequently heating the resulting liquid to be treated at a temperature of not lower that 75° C. and not higher than a boiling point of water under ordinary pressure, thereby an amines are recovered.

Abstract: An object of the present invention is to provide a CO2 removal apparatus that prevents release of an amine compound of an absorbing solution from a CO2 absorption device. The CO2 removal apparatus includes a desorption column 13 that heats and regenerates an amine compound aqueous solution discharged from a decarbonator 1 making counterflow contact of a combustion exhaust gas and an amine compound aqueous solution; and reflux means that refluxes an amine compound aqueous solution regenerated in the desorption column 13 to the decarbonator 1 via a cooler 19. A contact section that makes counterflow contact of reflux water of the desorption column 13 and a CO2-removed combustion exhaust gas is formed in two stages, and the cooler 19 on the downstream side of the desorption column is also formed in two stages. Reflux water from the first stage cooler is supplied to the first stage contact section, and reflux water from the second stage cooler is supplied to the second stage contact section.

Abstract: An object of the present invention is to provide a method for treating an exhaust gas containing CO2, that can adjust the concentration of an oxidation inhibitor in an absorbent to the concentration enough to inhibit oxidation, without measuring the concentration of the oxidation inhibitor in an alkanolamine contained in a CO2 absorbent. Disclosed are a method and a device for adjusting the compositional ratio of an absorbent, in which absorption and release of carbon dioxide are performed by adding an oxidation inhibitor to an alkanolamine absorbent when the sum of the concentrations of ammonia and an alkylamine in an absorber column outlet gas of a CO2 absorption equipment.

Abstract: A method of recovering carbon dioxide, includes bringing gas to be processed containing carbon dioxide (CO2) and oxygen into contact with the CO2-absorbing solution in an absorption column to form a CO2-rich solution; circulating the solution in a regeneration column to thermally release and recover CO2 and recirculating the absorbing solution as a CO2-poor solution inside the absorption column; and performing heat exchange between the solution being delivered from the absorption column to the regeneration column and the solution recirculated from the regeneration column to the absorption column, wherein an alkanolamine aqueous solution containing a silicone oil and/or an organosulfur compound is added to the solution inside the absorption column and/or the solution recirculated from the regeneration column to the absorption column to adjust the composition of the absorbing solution inside the absorption column.

Abstract: An object of the present invention is to provide a CO2 removal apparatus that prevents release of an amine compound of an absorbing solution from a CO2 absorption device. The CO2 removal apparatus includes a desorption column 13 that heats and regenerates an amine compound aqueous solution discharged from a decarbonator 1 making counterflow contact of a combustion exhaust gas and an amine compound aqueous solution; and reflux means that refluxes an amine compound aqueous solution regenerated in the desorption column 13 to the decarbonator 1 via a cooler 19. A contact section that makes counterflow contact of reflux water of the desorption column 13 and a CO2-removed combustion exhaust gas is formed in two stages, and the cooler 19 on the downstream side of the desorption column is also formed in two stages. Reflux water from the first stage cooler is supplied to the first stage contact section, and reflux water from the second stage cooler is supplied to the second stage contact section.

Abstract: An object of the present invention is to provide a method for treating an exhaust gas containing CO2, that can adjust the concentration of an oxidation inhibitor in an absorbent to the concentration enough to inhibit oxidation, without measuring the concentration of the oxidation inhibitor in an alkanolamine contained in a CO2 absorbent. Disclosed are a method and a device for adjusting the compositional ratio of an absorbent, in which absorption and release of carbon dioxide are performed by adding an oxidation inhibitor to an alkanolamine absorbent when the sum of the concentrations of ammonia and an alkylamine in an absorber column outlet gas of a CO2 absorption equipment.

Abstract: A method of recovering carbon dioxide, including bringing gas to be processed containing carbon dioxide (CO2) and oxygen into contact with the CO2-absorbing solution according to Claim 1 in an absorption column to form a CO2-rich solution; subsequently circulating the solution in a regeneration column to thermally release and recover CO2 and recirculating the absorbing solution as a CO2-poor solution inside the absorption column; and performing heat exchange between the solution being delivered from the absorption column to the regeneration column and the solution recirculated from the regeneration column to the absorption column, wherein an alkanolamine aqueous solution containing a silicone oil and/or an organosulfur compound represented by the Formula (A) or (B) is added to the solution inside the absorption column and/or the solution recirculated from the regeneration column to the absorption column to adjust the composition of the absorbing solution inside the absorption column so as to include the alkan

Abstract: A blow-off part 152 is provided with a blow-off port 1a? which is dimensioned small enough so as not to allow a blow-off stream to be blown off directly to a part of a wafer W which part is located at the more internal side of the wafer than the outer edge of the wafer W and not to be subjected to plasmatizing process. A suction part 151 is provided with a suction port 81A in associating with the blow-off part 152. The suction port 81A is disposed proximate to the blow-off port 1a? and forms a suction stream oriented generally in the reverse direction with respect to the blow-off stream.

Abstract: A particulate material removing filter for exhaust gas from a diesel engine is provided. The particulate material removing filter is formed by laminating metal laths having an oxidation catalyst layer containing a noble metal that oxidizes nitrogen oxide in exhaust gas into nitrogen dioxide. The metal laths are laminated to form a laminate in such a manner that the drawing direction of the metal lath processing differs by 90 degrees with each other.

Abstract: A particulate matter-removing filter being resistant to clogging and ash blocking, requiring no special means such as back-washing and heating combustion, and being formed of inexpensive materials; and exhaust emission controlling method and device using this. (1) A particulate-matter-containing exhaust emission controlling filter which uses as a basic unit a pair of porous corrugated sheet and a porous flat sheet that support an exhaust emission controlling catalyst, has a molding formed by laminating the porous corrugated sheets so that their ridge lines alternately cross perpendicularly, has one of side surfaces, perpendicularly crossing the corrugated sheet ridge lines, of the molding or mutually-adjoining two surfaces that are the perpendicularly-crossing side surfaces sealed, and has exhaust gas in-flow passage and out-flow passage respectively formed between porous corrugated sheets via a porous flat sheet.

Abstract: A magnet disposed on the top face of an extended part of a bearing holding member has a semicircle shape as the maximum shaper and is disposed in the same direction as the movement direction of a disk dray in the circumferential direction. By the pulling force in the axial direction between the magnet and a rotor holder, the shaft tilts at an angle different from the gravity direction or a direction opposite to the gravity direction.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: An inner medium passage 17 is formed between an inner peripheral surface 12a of an annular inner electrode 11 and an annular inner passage formation member 15 received in the electrode 11. An annular first seal member 18 is interposed between upper peripheral sides of the electrode and the member 15. An annular second seal member 19 is interposed between a bottom flat surface 15b of the member 15 and a flange part 13 of the electrode 11. Bottom peripheral sides of the electrode 11 and the member 15 are confronted with each other substantially without the interposition of any gap. The inner electrode 11 is surrounded by an annular outer electrode 21 via a gap 1p as a gas passage in which a processing gas is plasmatized. An outer medium passage 27 is formed between an outer peripheral surface 22a of the electrode 21 and an annular outer passage formation member 25. Third and fourth seal member 28, 29 are interposed between the electrode 21 and the member 25 respectively.

Abstract: A blow-off part 152 is provided with a blow-off port 1a? which is dimensioned small enough so as not to allow a blow-off stream to be blown off directly to a part of a wafer W which part is located at the more internal side of the wafer than the outer edge of the wafer W and not to be subjected to plasmatizing process. A suction part 151 is provided with a suction port 81A in associating with the blow-off part 152. The suction port 81A is disposed proximate to the blow-off port 1a? and forms a suction stream oriented generally in the reverse direction with respect to the blow-off stream.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A nozzle head NH of a plasma processing apparatus comprises an annular inner holder 3, an annular inner electrode 11 surrounding this holder 3, an annular outer electrode 21 surrounding this electrode 11, and an annular outer holder 4 surrounding this electrode 21. The inner holder 3 is provided with a plurality of bolts 7 spacedly arranged in the peripheral direction and adapted to push the inner electrode 11 radially outwardly. The outer holder 4 is provided with a plurality of bolts 8 spacedly arranged in the peripheral direction and adapted to push the outer electrode 21 radially inwardly. Owing to this arrangement, the operation for disassembling, assembling and centering the annular electrodes 11, 21 can be carried out with ease.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A brushless motor according to the present invention provided with a recording disk in a rotational member and serving to rotate the recording disk together with the rotational member comprises a first position detecting means for detecting a rotational position of the rotational member, a second position detecting means for detecting a rotational position of the recording disk, wherein a mode for rotating the rotational member at a high speed by a detection signal of the first position detecting means and a mode for rotating the rotational member at a low speed by a detection signal of the second position detecting means are generated. Thereby, the two rotation states whose rotation speeds are different can be obtained in a simplified constitution.