Abstract: An encapsulation technique for leadless semiconductor packages entails: (a) attaching a plurality of dice (411) to die pads in cavities (41-45, 51-55) of a leadframe, the cavities arranged in a matrix of columns and rows; (b) electrically connecting the dice to a plurality of conducting portions (412-414) of the leadframe; and (c) longitudinally injecting molding material into the cavities along the columns via a plurality of longitudinal gates (46-49, 56-59) of the leadframe to package the dice in the cavities, the longitudinal gates situated between the cavities along the columns.

Abstract: A die pad (81) of a leadframe (8) has a plurality of slots (811-814) that extend through the die pad to define a restrictive region (815). One of the slots extends around a comer of the restrictive region outside where a die (7) is connected to the die pad by solder paste (6). Because of the cohesion of the solder paste, the solder paste does not flow into the slots. The solder paste is thereby restricted to the restrictive region. This prevents the die from drifting or rotating so as to increase the packaging quality.

Abstract: The present invention relates to an encapsulation method of leadless semiconductor package. The method comprises the steps of: (a) attaching a plurality of dice to the die pads on the cavities of a leadframe, the leadframe having a plurality of cavities arranged in matrix configuration and classified into a plurality of columns and a plurality of rows; (b) electrically connecting the die on the die pad to a plurality of conducting portions of the leadframe; and (c) longitudinally injecting the mould compound into the cavities of the column via a plurality of longitudinal gates of the leadframe to package the dice on the cavities of the column, the longitudinal gates mounted between the cavities of the column. The method of the invention does not need a film to prevent the molding flash, and can solve the problem of remaining the molding flash on the conducting portion. The method of the invention does not use the expensive cutting equipment so as to decrease the cost and to upgrade the efficiency.

Abstract: A power semiconductor die has a drain contact, a source contact, and a gate contact. A lead frame has first, second, and third terminals. A metal sheet has first and second contacting portions and a bridging portion interconnecting the first and second contacting portions. The power semiconductor die is mounted on the lead frame such that the drain contact is connected to the first terminal. The metal sheet is attached to the top surface of the power semiconductor die and the second and third terminals of the lead frame such that the source contact and the second terminal are connected to the first contacting portion, and such that the gate contact and the third terminal are connected to the second contacting portion. The bridging portion is subsequently cut for disconnecting electrically the first and second contacting portions.

Abstract: A power semiconductor device includes a die having a drain contact, a source contact, a primary gate contact, a partitioning region that partitions the source contact, and a secondary gate contact disposed in the partitioning region. A conductive strip is connected to the primary and secondary gate contacts. An insulation layer encloses a segment of the conductive strip. A conductive connecting member includes a metal sheet and a conductive paste. The metal sheet is attached to the source contact via the conductive paste and is formed with a groove to expose the insulation layer from the metal sheet.

Abstract: The present invention relates to a die pad of a leadframe. The die pad is used for receiving a die. The die and the die pad are connected by a solder paste. The die pad comprises a plurality of slots. The slots extend through the die pad. A restrictive region is defined by the slots such that the solder paste is restricted within the restrictive region. The die is positioned on the restrictive region. Because of the cohesion of the solder paste, the solder paste does not flow into the slots. Therefore, the solder paste does not flow and expand everywhere during the heating process. The solder paste is restricted within the restrictive region so that the die on the solder paste does not drift so as to increase the packaging quality.

Abstract: A power semiconductor device includes upper and lower dice that have source, drain and gate contacts, a first metal sheet sandwiched by the upper and lower dice and having source and gate terminals connected to the source and gate contacts of the upper and lower dice, and upper and lower second metal sheets sandwiching assembly of the upper and lower dice and the first metal sheet and respectively having drain terminals that are connected to the drain contacts of the upper and lower dice and that are coupled to each other.

Abstract: A power semiconductor die has a drain contact, a source contact, and a gate contact. A lead frame has first, second, and third terminals. A metal sheet has first and second contacting portions and a bridging portion interconnecting the first and second contacting portions. The power semiconductor die is mounted on the lead frame such that the drain contact is connected to the first terminal. The metal sheet is attached to the top surface of the power semiconductor die and the second and third terminals of the lead frame such that the source contact and the second terminal are connected to the first contacting portion, and such that the gate contact and the third terminal are connected to the second contacting portion. The bridging portion is subsequently cut for disconnecting electrically the first and second contacting portions.