Abstract: A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.

Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

Abstract: A solid-state imaging device capable of achieving higher image quality is provided. Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit.

Abstract: To provide a light receiving element including: a photoelectric conversion unit (PD) that is provided in a semiconductor substrate and converts light into a charge; a first charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit; a second charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit, in which each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer.

Abstract: In a light receiving device, a light receiving element includes a first photoelectric conversion unit (PD) that converts light into electric charges, a first electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, a first distribution gate, a second electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, and a second distribution gate, in which the first and second distribution gates are provided at positions axially symmetric to each other with respect to a first center axis extending so as to pass through the center of the first photoelectric conversion unit, in a direction intersecting the column direction at a predetermined angle, when viewed from above the semiconductor substrate.

Abstract: Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

Abstract: There is provided an imaging element including: a photoelectric conversion unit formed by stacking a first electrode 21, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode 24 that has an opposite region 24a opposite to the first electrode 21 via an insulating layer 82, and a transfer control electrode 25 that is opposite to the first electrode 21 and the charge storage electrode 24 via the insulating layer 82, and the photoelectric conversion layer is disposed above at least the charge storage electrode 24 via the insulating layer 82.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Abstract: A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: A distance measurement accuracy is improved. A solid-state imaging device according to an embodiment includes a pixel array part in which a plurality of pixels is arranged in a matrix, in which each of the pixels includes a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate a charge, a floating diffusion region that accumulates the charge, a plurality of transfer circuits that transfer the charge generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charge accumulated in the floating diffusion region to appear in a signal line.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus which make it possible to improve pixel property. Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which contributes to control of discharge of charges or assist for transfer of charges. The present technology can be applied to, for example, a CMOS image sensor.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; a first electrode that collects a negative signal charge generated in the photoelectric conversion layer; and a second electrode that collects a positive signal charge generated in the photoelectric conversion layer. Each of the first electrode and the second electrode is provided on side opposite to a light incident surface of the photoelectric conversion layer.

Abstract: The present technology relates to a solid-state image sensing device capable of restricting a deterioration in photoelectric conversion characteristic of a photoelectric conversion unit, and an electronic device. A solid-state image sensing device includes: a photoelectric conversion unit formed outside a semiconductor substrate; a charge holding unit for holding signal charges generated by the photoelectric conversion unit; a reset transistor for resetting the potential of the charge holding unit; a capacitance switching transistor connected to the charge holding unit and directed for switching the capacitance of the charge holding unit; and an additional capacitance device connected to the capacitance switching transistor. The present technology is applicable to solid-state image sensing devices and the like, for example.

Abstract: Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.