Abstract: Examples of a silicon cold plate with an integrated PCB are described. An apparatus may include a silicon plate, one or more electrical and thermal connections, and a heat-generating device. The silicon plate may include a first side and a second side opposite the first side, a plurality of edges between the first side and the second side, one or more internal coolant flow channels therein, one or more coolant inlet ports disposed on one or more of the edges and configured to allow a coolant to flow into the one or more internal coolant flow channels, and one or more coolant outlet ports disposed on one or more of the edges and configured to allow the coolant to flow out of the one or more internal coolant flow channels. The one or more electrical and thermal connections may be disposed on the first side of the silicon plate. The heat-generating device may be disposed on the one or more electrical and thermal connections.

Abstract: Embodiments of an apparatus with a thermal management technique utilizing a silicon heat sink and/or a phase-change material, as well as an assembling method thereof, are described. In one aspect, the apparatus comprises a main unit, a phase-change material and an enclosure enclosing the main unit and the phase-change material. The main unit comprises a substrate and at least one heat-generating device disposed on the substrate. The phase-change material is in direct contact with each heat-generating device of the at least one heat-generating device to absorb and dissipate heat generated by the at least one heat-generating device.

Abstract: A thermal energy storage apparatus that absorbs thermal energy from a heat-generating device is described. In one aspect, the thermal energy storage apparatus comprises a non-metal container and a phase-change material. The non-metal container is configured to receive the heat-generating device thereon. The phase-change material is contained in the non-metal container and configured to absorb at least a portion of heat from the heat-generating device through the non-metal container.

Abstract: Embodiments of a mechanism of thermal isolation for multiple heat-generating devices on a substrate are described. In one aspect, a substrate is configured for a plurality of heat-generating devices to be disposed thereon. The substrate comprises an electrically-conductive layer that is electrically coupled to the heat-generating devices when the heat-generating devices are disposed on the substrate. The electrically-conductive layer is configured to thermally isolate the heat-generating devices such that there is no thermal coupling through the electrically-conductive layer amongst the heat-generating devices.

Abstract: Embodiments of a silicon-based heat dissipation device and a chip module assembly are described. An apparatus may include a silicon-based heat dissipation device, an extended device coupled to the silicon-based heat-dissipation device and heat-generating devices mounted on the silicon-based heat dissipation device. The silicon-based heat dissipation device may include a base portion having a first primary side and a second primary side opposite the first primary side. The silicon-based heat dissipation device may also include a protrusion portion on the first primary side of the base portion and protruding therefrom. The protrusion portion may include multiple fins. The base portion may include a slit opening with a first heat-generating device of the heat-generating devices on a first side of the slit opening and a second heat-generating device of the heat-generating devices on a second side of the slit opening opposite the first side of the slit opening.

Abstract: Embodiments of an electronic apparatus with a thermal management technique utilizing a silicon heat sink and/or a phase-change material, as well as an assembling method thereof, are described. In one aspect, the electronic apparatus comprises a main unit, a phase-change material and an enclosure enclosing the main unit and the phase-change material. The main unit comprises a substrate and at least one integrated-circuit (IC) chip disposed on the substrate. The phase-change material is in direct contact with each IC chip of the at least one IC chip to absorb and dissipate heat generated by the at least one IC chip.

Abstract: Embodiments of silicon-based thermal energy transfer apparatus for gain medium crystal of a laser system are provided. For a disk-shaped crystal, the apparatus includes a silicon-based manifold and a silicon-based cover element. For a rectangular cuboid-shaped gain medium crystal, the apparatus includes a first silicon-based manifold, a second silicon-based manifold, and first and second conduit elements coupled between the first and second manifolds. For a right circular cylinder-shaped gain medium crystal, the apparatus includes a first silicon-based manifold, a second silicon-based manifold, and first and second conduit elements coupled between the first and second manifolds.

Abstract: Embodiments of a silicon-based heat-dissipation device and an apparatus including a silicon-based heat-dissipation device are described. In one aspect, an apparatus includes a silicon-based heat-dissipation device which includes a base portion and a protrusion portion. The base portion has a first primary side and a second primary side opposite the first primary side. The protrusion portion is on the first primary side of the base portion and protruding therefrom. The protrusion portion includes multiple fins. Each of at least two immediately adjacent fins of the fins of the protrusion portion has a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device.

Abstract: Embodiments of a silicon-based heat dissipation device and a chip module assembly utilizing the silicon-based heat dissipation device are described. In one aspect, the chip module assembly includes a chip module and a primary heat dissipation module. The chip module includes a board and at least one heat-generating device. The board includes a first primary side and a second primary side opposite the first primary side. The at least one heat-generating device is disposed on the first primary side of the board. The primary heat dissipation module includes at least one silicon-based heat dissipation device disposed on the at least one heat-generating device.

Abstract: Embodiments of a silicon-based heat-dissipation device and an apparatus including a silicon-based heat-dissipation device are described. In one aspect, an apparatus includes a silicon-based heat-dissipation device which includes a base portion and a protrusion portion. The base portion has a first primary side and a second primary side opposite the first primary side. The protrusion portion is on the first primary side of the base portion and protruding therefrom. The protrusion portion includes multiple fins. Each of at least two immediately adjacent fins of the fins of the protrusion portion has a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device.

Abstract: Various embodiments of an apparatus that simultaneously cools and thermally decouples adjacent electrically-driven devices in close proximity are provided. In one aspect, an apparatus comprises a first non-silicon heat sink and a first silicon-based heat sink disposed on the first non-silicon heat sink. The first silicon-based heat sink is configured to receive a first electrically-driven device on a first portion of the first silicon-based heat sink and to receive a second electrically-driven device on a second portion of the first silicon-based heat sink. The first silicon-based heat sink includes a first groove or a first opening between the first portion and the second portion such that a heat conduction path between the first electrically-driven device and the first non-silicon heat sink through the first silicon-based heat sink is shorter than a heat conduction path between the first electrically-driven device and the second electrically-driven device through the first silicon-based heat sink.

Abstract: Embodiments of a thermal management unit and an electronic apparatus utilizing the thermal management unit are described. In one aspect, the thermal management unit includes a heat sink. The heat sink includes a base portion, a first protrusion structure and a second protrusion structure. The base portion has a first side and a second side opposite the first side. The first protrusion structure protrudes from the first side of the base portion, and includes multiple fins. The second protrusion structure protrudes from the second side of the base portion, and includes multiple ribs. The heat sink may be made of silicon.

Abstract: Various embodiments of an apparatus that simultaneously cools and thermally decouples adjacent electrically-driven devices in close proximity are provided. In one aspect, an apparatus comprises a first non-silicon heat sink and a first silicon-based heat sink disposed on the first non-silicon heat sink. The first silicon-based heat sink is configured to receive a first electrically-driven device on a first portion of the first silicon-based heat sink and to receive a second electrically-driven device on a second portion of the first silicon-based heat sink. The first silicon-based heat sink includes a first groove or a first opening between the first portion and the second portion such that a heat conduction path between the first electrically-driven device and the first non-silicon heat sink through the first silicon-based heat sink is shorter than a heat conduction path between the first electrically-driven device and the second electrically-driven device through the first silicon-based heat sink.

Abstract: Embodiments of an electronic apparatus with a thermal management technique utilizing a silicon heat sink and/or a phase-change material, as well as an assembling method thereof, are described. In one aspect, the electronic apparatus comprises a main unit, a phase-change material and an enclosure enclosing the main unit and the phase-change material. The main unit comprises a substrate and at least one integrated-circuit (IC) chip disposed on the substrate. The phase-change material is in direct contact with each IC chip of the at least one IC chip to absorb and dissipate heat generated by the at least one IC chip.

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a silicon-based base portion having a first primary surface and a silicon-based support structure. The silicon-based support structure includes a mounting end and a distal end opposite the mounting end with the mounting end received by the base portion such that the support structure extends from the first primary surface of the base portion. The support structure includes a recess defined therein to receive the edge-emitting laser diode. The support structure further includes a slit connecting the distal end and the recess to expose at least a portion of a light-emitting edge of the edge-emitting laser diode when the edge-emitting laser diode is received in the support structure.

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a base portion and a support portion. The base portion is made of silicon and includes a first primary surface. The first primary surface includes at least first and second V-notch grooves thereon. The support portion is made of silicon and includes at least first and second edges that are interlockingly received in the first and second V-notch grooves when the support portion is mounted on the base portion.

Abstract: Embodiments of a silicon heat-dissipation package for compact electronic devices are described. In one aspect, a device includes first and second silicon cover plates. The first silicon cover plate has a first primary side and a second primary side opposite the first primary side thereof. The second silicon cover plate has a first primary side and a second primary side opposite the first primary side thereof. The first primary side of the second silicon cover plate includes an indentation configured to accommodate an electronic device therein. The first primary side of the second silicon cover plate is configured to mate with the second primary side of the first silicon cover plate when the first silicon cover plate and the second silicon cover plate are joined together with the electronic device sandwiched therebetween.

Abstract: Embodiments of a three-dimensional silicon structure for integrated circuits and cooling thereof are described. In one aspect, a device includes a silicon substrate having a first primary side and a second primary side opposite the first primary side. The first primary side includes a circuit structure disposed thereon. The second primary side includes a plurality of fins monolithically formed thereon.

Abstract: Embodiments of silicon-based thermal energy transfer apparatus for a gain medium of a laser system are provided. In one aspect, a silicon-based thermal energy transfer apparatus includes silicon-based first and second manifolds each having internal coolant flow channels therein. When the first and second manifolds are coupled together, a first groove on the first manifold and a second groove on the second manifold form a through hole configured to receive the gain medium therein. The through hole has a polygonal cross section when viewed along a longitudinal axis of the gain medium.

Abstract: A low cost design for a concentrated photovoltaic (CPV) solar cell device is developed with a 3-D solar cell structure that eliminates the need for sun-ray tracking and with improved electricity conversion efficiency for cooling solar cells. The 3-D solar cell structure can be built with conventional monocrystalline or polycrystalline silicon or with multi-junction III-V solar material, joining two or more solar cell segments perpendicular to a base solar cell. This structure is able to collect all incident sunlight from sunrise to sunset.