Abstract: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).

Abstract: Semiconductor chip (1101) of a ball grid array device (1100) is mounted onto tape substrate (1102) using attach adhesive (1103). The metal layer on the top surface of substrate (1102) uses between about 30% to 90% of its area for connecting lines (1104), and only the remainder for members/rings (1105) and terminals (1106). Routing of differential pair signals and large numbers of signals on a single layer tape package are feasible. This embodiment creates an inexpensive high performance tape ball grid array package for chip-scale devices. Terminals (1106) serve the connection (by bonding wires or reflow bumps) to the chip contact pads. Inserted in members/rings (1105) are the conductive pins (1107), which serve as anchors for the solder bodies/balls (1108). Pins (1107) are substantially insensitive to the thermomechanical stresses, which occur in device (1100) during assembly, testing and operation.

Abstract: A transistor apparatus includes a silicon substrate and a barrier structure extending substantially from generally adjacent the silicon substrate to a locus displaced from the silicon substrate. The barrier structure generally surrounds a volume containing connection loci for the transistor apparatus and a buried layer in a silicon medium. The connection loci and the buried layer occupy a space generally presenting a first lateral expanse generally parallel with the silicon substrate. The volume presents a second lateral expanse generally parallel with the silicon substrate. The second lateral expanse is greater than the first lateral expanse within a predetermined distance of the substrate.

Abstract: One embodiment relates to a circuit. In this circuit, a first semiconductor device with a first geometry is associated with a first region of a semiconductor body within a first isolation structure. A second semiconductor device with a geometry that matches the first geometry is associated with a second region of the semiconductor body within a second isolation structure. A member, which spans the semiconductor body between the first region and the second region, thermally couples the first region to the second region while retaining electrical isolation therebetween. Other circuits and methods are also disclosed.

Abstract: Semiconductor chip (1101) of a ball grid array device (1100) is mounted onto tape substrate (1102) using attach adhesive (1103). The metal layer on the top surface of substrate (1102) uses between about 30% to 90% of its area for connecting lines (1104), and only the remainder for members/rings (1105) and terminals (1106). Routing of differential pair signals and large numbers of signals on a single layer tape package are feasible. This embodiment creates an inexpensive high performance tape ball grid array package for chip-scale devices. Terminals (1106) serve the connection (by bonding wires or reflow bumps) to the chip contact pads. Inserted in members/rings (1105) are the conductive pins (1107), which serve as anchors for the solder bodies/balls (1108). Pins (1107) are substantially insensitive to the thermomechanical stresses, which occur in device (1100) during assembly, testing and operation.

Abstract: The present invention provides a system for providing a cross-lateral junction field effect transistor (114) having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate (102). A channel structure (124) is formed along the substrate, having source (120) and drain (122) structures laterally formed on opposites sides thereof. A first gate structure (116) is formed along the substrate, laterally adjoining the channel structure orthogonal to the source and drain structures. A second gate structure (118) is formed along the substrate, laterally adjoining the channel structure, orthogonal to the source and drain structures and opposite the first gate stricture.

Abstract: An integrated circuit programmable structure (60) is formed for use a trim resistor and/or a programmable fuse. The programmable structure comprises placing heating elements (70) in close proximity to the programmable structure (60) to heat the programmable structure (60) during programming.

Abstract: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).

Abstract: An integrated circuit device package with a first part (101) having a cavity (104) to mount the chip (105), further I/O terminals (102) on the top surface and terminals (103) on the bottom surface. The chip has contact pads (107a and 107b). The second part (110) of the package has bottom surface terminals (111) aligned with the chip contact pads, and bottom terminals (112) aligned with the terminals (102) of the first package part. The connections are provided by stud bumps between the chip contact pads and terminals (111), and by reflow material between terminals (102) and (112). The connector lines (109a and 109b) in the second package part (110) comprise signal/power and ground layers. The layers are spaced by insulation between 10 and 50 ?m thick, and the connector lines have a width less than three times the insulator thickness.

Abstract: One embodiment of the invention is a semiconductor system (1400) of arrays (1401, 1402, etc.) of packaged devices. Each array includes a sheet-like substrate (1411, 1412, etc.) made of insulating material integral with conductive horizontal lines and vertical vias, and terminals on the surfaces. Semiconductor components, which may include more than one active or passive chips, or chips of different sizes, are attached to the substrate; the electrical connections may include flip-chip, wire bond, or combination techniques. Encapsulation compound (1412, 1422, etc.), which adheres to the substrate, embeds the connected components. Metal posts (1431, 1432, etc.) traverse the encapsulation compound vertically, connecting the substrate vias with pads on the encapsulation surface. The pads are covered with solder bodies used to connect to the next-level device array so that a 3-dimensional system of packaged devices is formed.

Abstract: The present invention provides a system for providing a cross-lateral junction field effect transistor (114) having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate (102). A channel structure (124) is formed along the substrate, having source (120) and drain (122) structures laterally formed on opposites sides thereof. A first gate structure (116) is formed along the substrate, laterally adjoining the channel structure orthogonal to the source and drain structures. A second gate structure (118) is formed along the substrate, laterally adjoining the channel structure, orthogonal to the source and drain structures and opposite the first gate structure.

Abstract: The teachings of the present invention provide a method for modeling an integrated circuit system including a microchip, an integrated circuit package, and a printed circuit board. The method includes generating a configuration file including parasitics regarding ball grid arrays and vias intended for use in design of the integrated circuit system. A netlist may be generated using the configuration file. In accordance with a particular embodiment of the present invention, the operation of the integrated circuit system may be simulated to determine anticipated operating characteristics of the integrated circuit system.

Abstract: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).

Abstract: A bipolar transistor in a monocrystalline semiconductor substrate (101), which has a first conductivity type and includes a surface layer (102) of the opposite conductivity type. The transistor comprises an emitter contact (110) on the surface layer; a base contact (130 and 131) extending through a substantial portion (141) of the surface layer, spaced apart (140a) from the emitter; an insulator region (150/151) buried under the base contact; a collector contact (120); and a first polycrystalline semiconductor region (152/153) selectively located under the insulator region, and a second polycrystalline semiconductor region (154) selectively located under the collector contact. These polycrystalline regions exhibit heavy dopant concentrations of the first conductivity type; consequently, they lower the collector resistance.

Abstract: A substrate (300) for a package of high frequency semiconductor devices comprising a planar insulating substrate having a plurality of parallel, planar metal layers (301a, 301b, etc.) embedded in the insulator. The substrate further has at least one pair of parallel, metal-filled vias (302 and 303) traversing the substrate; the vias have a diameter and a distance from each other of at least this diameter. The metal in each via has a sheet-like extension (321a, 321b, etc.) in each of selected planes of said metal layers, resulting in an increased via-to-via capacitance so that the reflection of a high frequency signal is less than 10%.

Abstract: Contacts are formed to integrated circuit devices by first forming a conductive layer (80) on a semiconductor device. An optional dielectric layer (130) is formed over the conductive layer and a carbon containing dielectric layer (140) is formed over the optional dielectric layer (130). Contacts are formed to the conductive layer (80) by etching openings in the carbon containing dielectric layer (140) and the optional dielectric layer (130).

Abstract: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).

Abstract: Bipolar transistors and methods for fabricating bipolar transistors are disclosed wherein an emitter-base dielectric stack is formed between emitter and base structures, comprising a carbide layer situated between first and second oxide layers. The carbide layer provides an etch stop for etching the overlying oxide layer, and the underlying oxide layer provides an etch stop for etching the carbide layer to form an emitter-base contact opening.

Abstract: An integrated circuit programmable structure (60) is formed for use a trim resistor and/or a programmable fuse. The programmable structure comprises placing heating elements (70) in close proximity to the programmable structure (60) to heat the programmable structure (60) during programming.

Abstract: A heterojunction bipolar transistor (30) in a silicon-on-insulator (SOI) structure is disclosed. The transistor collector (28), heterojunction base region (20), and intrinsic emitter region (25) are formed in the thin film silicon layer (6) overlying the buried insulator layer (4). A base electrode (10) is formed of polysilicon, and has a polysilicon filament (10f) that extends over the edge of an insulator layer (8) to contact the silicon layer (6). After formation of insulator filaments (12) along the edges of the base electrode (10) and insulator layer (8), the thin film silicon layer (6) is etched through, exposing an edge. An angled ion implantation then implants the heterojunction species, for example germanium and carbon, into the exposed edge of the thin film silicon layer (6), which after anneal forms the heterojunction base region (20).