Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

Abstract: A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

Abstract: The inventive concept provides a method for treating a substrate. The method for treating a substrate comprises: a pressurization step for increasing a pressure of an inner space of a chamber by supplying a treating fluid to the inner space, after taking the substrate into the inner space; a flow step for generating a flow of the treating fluid by combination of supplying and discharging the treating fluid to and from the inner space; and a depressurization step of decreasing the pressure of the inner space by discharging the treating fluid from the inner space, and wherein the pressurization step comprises: a bottom side supply process for increasing the pressure of the inner space by supplying the treating fluid to a backside of the substrate taken into the inner space; and a top side supply process of increasing the pressure of the inner space by supplying the treating fluid to a top side of the substrate taken into the inner space.

Abstract: An apparatus for processing a substrate includes a chamber having a processing space inside, a substrate support unit that supports the substrate in the processing space, and a temperature adjustment unit that is installed in the chamber and that adjusts temperature in the processing space. The temperature adjustment unit includes a heating member that heats the processing space and a cooling member that cools the processing space. The cooling member is located closer to a central axis of the chamber than the heating member.

Abstract: Embodiments of the inventive concept provide a substrate treating apparatus. According to an exemplary embodiment, the substrate treating apparatus comprises a first process chamber applying a process fluid containing an organic solvent to a substrate wet with a developer and introduced; and a second process chamber treating the substrate applied with the process fluid and introduced, through a supercritical fluid.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a first process chamber to apply an organic solvent to a substrate applied with a developer and introduced, and a second process chamber to treat the substrate applied with the organic solvent and introduced, through a supercritical fluid.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The substrate cleaning composite includes an etching compound that provides a component for treating a substrate, and a solvent that dissolves the etching compound, wherein the substrate cleaning composite is an anhydrous composite that does not include water.

Abstract: A supercritical processing apparatus includes an upper vessel including a first fluid hole formed in a center thereof, and a lower vessel including a second fluid hole formed in a center thereof. A space is defined between the upper and lower vessels and configured to allow a substrate to be placed therein. The upper vessel further includes a first guide portion provided at a lower portion thereof to be gradually inclined downward toward a periphery thereof from the first fluid hole.

Abstract: A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

Abstract: A substrate treating method includes performing a developing process on a substrate subjected to an exposing process and a post-bake process by applying a developing fluid to the substrate, applying a rinsing fluid to the substrate subjected to the developing process, and moving, to a high-pressure chamber, the substrate having the rinsing fluid applied thereto and treating the substrate by using a supercritical fluid.

Abstract: An apparatus for processing a substrate includes a chamber having a processing space inside, a substrate support unit that supports the substrate in the processing space, and a temperature adjustment unit that is installed in the chamber and that adjusts temperature in the processing space. The temperature adjustment unit includes a heating member that heats the processing space and a cooling member that cools the processing space. The cooling member is located closer to a central axis of the chamber than the heating member.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The substrate cleaning composite includes an etching compound that provides a component for treating a substrate, and a solvent that dissolves the etching compound, wherein the substrate cleaning composite is an anhydrous composite that does not include water.

Abstract: An energy storage system includes multiple cells, a heat pipe, a first heat transfer channel, and a second heat transfer channel. Each cell has a first end with anode and cathode terminals and a second end opposite the first end with the multiple cells arranged so that the second ends are aligned. The heat pipe has a U-shape and includes an evaporation portion having a flat evaporation surface facing the second ends of the multiple cells, a first condensation portion oriented substantially perpendicular to the evaporation portion, and a second condensation portion oriented substantially perpendicular to the evaporation portion. The first condensation portion is at a first end of the evaporation portion and the second condensation portion is at a second end of the evaporation portion. The first heat transfer channel abuts the first condensation portion and the second heat transfer channel abuts the second condensation portion.