Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a semiconductor substrate, a first ILD layer over the semiconductor substrate, and a first metal feature in the first ILD layer; depositing a second metal feature over the workpiece such that the second metal feature is electrically coupled to the first metal feature; patterning the second metal feature to form a first trench adjacent to the first metal feature; depositing a blocking layer over the workpiece, wherein the blocking layer selectively attaches to the first ILD layer; depositing a barrier layer over the workpiece, wherein the barrier layer selectively forms over the second metal feature relative to the first ILD layer; and depositing a second ILD layer over the workpiece.

Abstract: A patient interface including a positioning and stabilizing structure that is configured to maintain a first seal-forming structure and a second seal-forming structure in a therapeutically effective position. The positioning and stabilizing structure comprises a frame coupled to the plenum chamber. The frame includes a central portion coupled to the plenum chamber outside of the cavity. The frame also includes a pair of arms that extend away from the central portion in a posterior direction past the second seal-forming structure. The pair of arms are more flexible than the central portion. The positioning and stabilizing structure also includes headgear straps coupled to the frame, which configured to provide a tensile force to the first seal-forming structure and to the second seal-forming structure into the patient's face via the frame.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.

Abstract: Provided are compounds having a tetradentate structure of that are useful as emitters in OLED applications.

Abstract: Provided is a dual-polarization high-isolation Cassegrain antenna, including a main reflector, a secondary reflector and a diagonal horn feed. The diagonal horn feed includes an integrated cross-polarization coupling-structure and a diagonal horn protruding structure, where a hollow part of the diagonal horn protruding structure is diagonal horn-shaped, and a horn opening is upward. An edge line is arranged in the diagonal horn feed, and the edge line passes through the diagonal horn protruding structure and the cross-polarization coupling-structure. The cross-polarization coupling-structure includes a first port and a second port. The second port is located at a side surface of the diagonal horn feed, and an access is communicated with an edge line of a diagonal horn. The first port is located at a bottom surface of the diagonal horn feed.

Abstract: A multilayer film having coextruded layers comprising a znLLDPE-based core layer, and mLLDPE-based outer layers on each side of the core layer comprising, wherein the znLLDPE of the core layer has a density which is less than 0.005 g/cc different from a density of the mLLDPE of the outer layers, and wherein the znLLDPE of the core layer has a melting temperature which is less than 15° C. different from a melting temperature of the mLLDPE of the outer layers.

Abstract: Display panels, manufacturing methods thereof, and display devices are provided. The display panel includes a substrate, a thin film transistor layer, an insulation film, a first conductive layer disposed above the insulation film, a light-emitting layer including an organic material and disposed above the first conductive layer, a functional layer disposed above the light-emitting layer, and a second conductive layer disposed above the functional layer. The insulation film includes protrusions protruding upwards. The first conductive layer includes pixel electrodes and auxiliary electrodes insulated from the pixel electrodes. The auxiliary electrode is disposed above the protrusion and includes a protruding part having a height higher than that of the pixel electrode in a vertical direction. The functional layer includes through holes disposed above the protrusions. The second conductive layer is connected to the protruding parts via the through holes.

Abstract: A light-emitting element includes a substrate includes an upper surface; a plurality of protrusions formed on the upper surface, wherein the plurality of protrusions includes a height less than or equal to 1 ?m; and a stack structure formed on the substrate, wherein the stack structure includes a first doped semiconductor layer, a light-emitting layer, and a second doped semiconductor layer, wherein the stack structure includes a total thickness less than 4 ?m.

Abstract: An optical imaging lens includes a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element arranged in order from an object side to an image side along an optical axis. Each lens element has an object-side surface and an image-side surface. The object-side surface of the third lens element has a convex portion in a vicinity of a periphery of the third lens element; the object-side surface of the fourth lens element has a convex portion in a vicinity of the optical axis; the object-side surface of the fifth lens element has a convex portion in a vicinity of the optical axis; the image-side surface of the fifth lens element has a convex portion in a vicinity of a periphery of the fifth lens element; and the seventh lens element has negative refracting power.

Abstract: An optical imaging lens including first, second, third, fourth, fifth and sixth lens elements sequentially along an optical axis from an object side to an image side is provided. The first to sixth lens elements each includes an object-side surface facing toward the object side and allowing imaging rays to pass through and an image-side surface facing toward the image side and allowing imaging rays to pass through. The optical imaging lens has only the six lens elements and satisfies condition expressions of Li11t42/L42t62?2.400 and V3+V4+V5?120.000.

Abstract: An optical imaging lens includes a first lens element to a fourth lens element, and each lens element has an object-side surface and an image-side surface. The first lens element has negative refracting power, an optical axis region of the object-side surface of the first lens element is convex, the third lens element has negative refracting power, and an optical axis region of the image-side surface of the fourth lens element is convex. Lens elements included by the optical imaging lens are only the four lens elements described above, and the optical imaging lens satisfies the relationship of Tmax+Tmin?700.000 ?m, Tmax is a maximum thickness of the four lens elements from the first lens element to the fourth lens element along the optical axis, Tmin is a minimum thickness of the four lens elements from the first lens element to the fourth lens element along the optical axis.

Abstract: A multilayer film having coextruded layers comprising a znLLDPE-based core layer, and mLLDPE-based outer layers on each side of the core layer comprising, wherein the znLLDPE of the core layer has a density which is less than 0.005 g/cc different from a density of the mLLDPE of the outer layers, and wherein the znLLDPE of the core layer has a melting temperature which is less than 15° C. different from a melting temperature of the mLLDPE of the outer layers.

Abstract: Wireless electronic devices include one or more wireless antennas to provide for wireless communications. The antenna cables are routed internally within the device and typically noise from components located on a circuit board may couple to the antenna cables and cause a degradation in wireless performance, impact antenna sensitivity and cause packet loss. Utilizing raised pathways in a heat sink utilized for thermal transfer of heat to a housing enables tunnels to be formed between the housing and the heat sink. Routing the antenna cables through the tunnels improves noise isolation for the antenna cables while still maintaining the heat transfer. The raised pathways are configured to not interfere with components on the circuit board or components included in the housing. The wireless antennas may be mounted within the housing instead of on the board so no portion of the antenna cables are located on the circuit board.

Abstract: A high-efficiency cultivation method for high-frequency drip irrigation, water saving, seedling survival and strengthening, and yield increase of cotton fields in saline-alkali soil is provided, belonging to the field of agricultural planting technologies. It mainly includes performing land preparation; setting a planting mode; laying tubes; performing a high frequency drip irrigation; fertilizing with water; performing intertillage; performing chemical control; and performing green prevention and control. The method effectively solves many defects in the existing methods, improves the quality of cotton field preparation and seeding in saline-alkali soil, saves irrigation water, increases the emergence rate and seedling survival rate, improves the saline-alkali resistance of cotton seedlings, increases the yield, and achieves the goal of water-saving, high-quality and high-efficiency cultivation of cotton seedlings in saline-alkali soil.

Abstract: An optical imaging lens may include a first, a second, a third, a fourth, a fifth, and a sixth lens elements positioned in an order from an object side to an image side. Through designing concave and/or convex surfaces of the six lens elements, the improved optical imaging lens may provide better imaging quality while the length of the lens may be shortened, the F-number may be reduced, and the field of view may be extended.

Abstract: The present invention provides an optical imaging lens. The optical imaging lens comprises eight lens elements positioned in an order from an object side to an image side. Through controlling the convex or concave shape of the surfaces of the lens elements, the optical imaging lens may enlarge aperture stop and image height and increase resolution.

Abstract: An optical imaging lens may include a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element, an eighth lens element and a ninth lens element positioned in an order from an object side to an image side. Through designing concave and/or convex surfaces of the lens elements, the optical imaging lens may increase resolution, increase aperture stop and image height, and maintain well image quality.

Abstract: An optical imaging lens includes a first lens element to a ninth lens element from an object side to an image side along an optical axis and each lens element has an object-side surface and an image-side surface. A periphery region of the object-side surface of the fourth lens element is concave, an optical axis region of the image-side surface of the fourth lens element is convex, an optical axis region of the object-side surface of the seventh lens element is concave, an optical axis region of the image-side surface of the eighth lens element is concave, and an optical axis region of the object-side surface of the ninth lens element is concave. Lens elements included by the optical imaging lens are only nine lens elements described above. An Abbe number of the fifth lens element ?5 and an Abbe number of the ninth lens element ?9 satisfy ?5+?9?100.000.

Abstract: Provided is an optical imaging lens, including a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element, and an eighth lens element sequentially arranged along an optical axis from an object side to an image side. The first lens element has positive refracting power. A periphery region of the object-side surface of the second lens element is convex. The third lens element has positive refracting power. A periphery region of the image-side surface of the third lens element is concave. An optical axis region of the image-side surface of the fifth lens element is concave. An optical axis region of the image-side surface of the sixth lens element is convex. A periphery region of the object-side surface of the eighth lens element is convex.