Abstract: A pipetting device includes a portal frame. The portal frame is arranged with a bearing device for bearing a feed pump, a driving mechanism for driving the bearing device to move up and down, and a liquid suction and injection mechanism for sucking or injecting liquid by the feed pump. The bearing device includes a bearing plate with receiving grooves. The driving mechanism includes a first bracing plate connected to the bearing plate, and the frame is arranged with a first motor. The liquid suction and injection mechanism includes a second bracing plate. The first bracing plate is arranged with a second motor. The first motor and the second motor are connected to a PLC.

Abstract: Disclosed is a pyridazinone compound represented by Formula (I), or a pharmaceutically acceptable salt, prodrug, hydrate, solvate, polymorph, stereoisomer, or isotopic variant thereof. The compound can be used for preparation of medicinal products for treatment and/or prophylaxis of a disease or condition associated with thyroid hormone abnormalities. The compound has higher selectivity to TH?, better pharmacokinetic parameters, desired stability, and higher agonistic activity toward TH?.

Abstract: A signal decision equalization method and apparatus are provided. The method includes: obtaining an input signal; determining a decision circuit of the input signal; obtaining a first group of decision thresholds and a first group of equalization expectations of the decision circuit; determining a decision value of the input signal based on the first group of equalization expectations, the first group of decision thresholds, and the input signal, and outputting the decision value; updating, based on the decision value and the input signal, a first equalization expectation that is in the first group of equalization expectations and that corresponds to the decision value to a second equalization expectation to obtain a second group of equalization expectations; and updating at least one decision threshold in the first group of decision thresholds based on the second equalization expectation to obtain a second group of decision thresholds.

Abstract: Semiconductor structure and method of forming semiconductor structure are provided. The semiconductor structure includes a substrate, a first isolation structure, and a first nanostructure and a second nanostructure on two sides of the first isolation structure. The semiconductor structure also includes a second isolation structure, and a third nanostructure and a fourth nanostructure on two sides of the second isolation structure. A top of the second isolation structure is lower than a top of the first isolation structure. The semiconductor structure also includes a first gate structure and a second gate structure. The first gate structure and the second gate structure expose a top surface of the first isolation structure. The semiconductor structure also includes a third gate structure and a fourth gate structure. The third gate structure and the fourth gate structure are in contact with each other on a top surface of the second isolation structure.

Abstract: An interruption-handling setting for a category of interactions of an application is determined via a programmatic interface. A set of user-generated input is obtained while presentation to a user of a set of output of the category is in progress. A response to the set of user-generated input is prepared based at least in part on the interruption-handling setting.

Abstract: The present application relates to a photon measuring and reading device, which belongs to the field of detection equipment, including a mounting seat and a photon counter. The photon counter can move up and down on the mounting seat. The mounting seat is provided with a vertically arranged sliding trough, and the photon counter is provided with a sliding rod slidably connected with the sliding trough. A double head motor is arranged on the mounting base, and a linkage mechanism is arranged between the output shaft at the tail end of the double head motor and the sliding rod. The bottom end of the photon counter is fixed with a box body.

Abstract: The present invention discloses a high-entropy soft magnetic alloy with 900 K high-temperature resistance, comprising Fe, Co, Ni, Si and Al, and the atomic percent of the alloy composition is expressed as FexCoyNizSimAln, wherein x=40%-80%, y=20%-60%, z=0-30%, m=0-20%, n=0-20%, and x+y+z+m+n=100%; the atomic percent of other doping elements is p=0-5%, and 0.5?m/n?3; the performance indexes of the material include: at room temperature, saturation magnetization Ms=90-150 emu/g, and coercive force Hc=0.1-15 Oe; and at 900 K, saturation magnetization Ms=70-130 emu/g, and coercive force Hc=0.1-25 Oe.

Abstract: The present disclosure provides a terminal vibration evaluation method performed by an electronic device. The method includes: acquiring an actual vibration curve of a target terminal when a target game scenario is displayed; acquiring a predefined vibration description file associated with the target game scenario, and determining a predefined vibration curve according to the predefined vibration description file; determining target deviation data between the actual vibration curve and the predefined vibration curve; and determining, according to the target deviation data, whether vibration of the target terminal matches the target game scenario. The present disclosure provides a measurement solution used for determining whether terminal vibration matches a game scenario (for example, a game sound and a game picture), which helps improve a matching degree between terminal vibration and the game scenario, thereby improving a sense of substitution of the game and a sense of immersion of a player.

Abstract: The present disclosure provides a dental bleaching guide plate, including a first plate and a second plate, wherein the first plate and the second plate are abutted to form an enclosed deep groove structure, the first plate is provided with a guide hole, a spacing between two opposite side surfaces of the first plate and the second plate is greater than an outer diameter of a neck of a tooth, and there is a gap between the side surfaces of the first plate and the second plate and side surfaces of the tooth. The guide plate can be sleeved onto an exterior of a tooth to inhibit a bleaching agent from coming into contact with other teeth. In addition, a range and an amount of applying a bleaching agent can be accurately controlled, partitioned coloration and bleaching can be implemented, and an administration position can be accurately located.

Abstract: A semiconductor structure includes a substrate that includes a base, a plurality of channel layers on the base, and an isolation layer between each of the channel layers. The semiconductor structure also includes a gate on the substrate, spanning a top and a portion of sidewalls of the channel layers. The semiconductor structure also includes a sidewall structure on sidewalls at two sides of the gate, a source/drain region in the substrate at two sides of the gate and the sidewall structure, a source/drain electrical connection layer on the source/drain region, and an isolation structure between the source/drain electrical connection layer and the gate. The isolation structure includes a cavity, including a first cavity region and a second cavity region located on the first cavity region. A width of the second cavity region is smaller than a width of the first cavity region.

Abstract: A method includes: acquiring a semantic primitive set of a multi-view image set; acquiring a coordinate offset by inputting coordinate information and a feature vector corresponding to a first grid sampling point of the semantic primitive set into a first network model, and acquiring a second grid of the semantic primitive set based on the coordinate offset and geometric attribute information of the semantic primitive set; acquiring first feature information of a second grid sampling point by inputting coordinate information and a feature vector corresponding to the second grid sampling point, and an observation angle value into a second network model, and acquiring second feature information of the semantic primitive set based on the first feature information; and acquiring a light field reconstruction result of the multi-view image set based on an observation angle value of the semantic primitive set and third feature information extracted from the second feature information.

Abstract: The present application relates to the technical field of wireless communications, and discloses a terminal location capability reporting method and device. The method comprises: an access and mobility management function (AMF) entity obtains and stores a terminal location capability of a terminal, and after a location service for a target terminal arrives, if the terminal location capability of the target terminal is stored in the AMF entity, the AMF entity transmits the terminal location capability of the target terminal to a location management function (LMF) entity, so that the LMF sets a location method for the target terminal according to the terminal location capability. In the process above, when the LMF entity needs to obtain the terminal location capability of the target terminal, the terminal location capability of the target terminal can be directly obtained from the AMF entity, and there is no need to interact with the terminal to obtain the terminal location capability.

Abstract: A frame rate adjustment method, apparatus and device, a computer-readable storage medium and a computer program product. The method includes: acquiring running data of a client during running in a foreground when the client in the terminal device supports dynamic frame rate switching; determining a running scenario of the client based on the running data; determining a target running frame rate of the client based on the running scenario; and performing, by the client, image outputting according to the target running frame rate, and triggering an operating system of the terminal device to adjust a refresh rate of a screen according to the target running frame rate.

Abstract: An intelligent oil extraction system using an all-metal screw pump includes: the all-metal screw pump, an oil collecting unit (43), and a steam generating unit (45); wherein an internal threaded curve surface and an external threaded curve surface of the all-metal screw pump are both tapered spiral structures with equal tapers; the oil extraction system comprises a lifting mechanism and monitoring and control mechanism; the monitoring and control mechanism comprises: a controller (34), a torque sensor (35), a flow sensor (36), a pressure sensor (39), a liquid level detector (38), and a backup power source (37); the controller (34) is electrically connected to the torque sensor (35), the flow sensor (36), the pressure sensor (39), the liquid level detector (38), the backup power source (37), a drive motor (48), a servo motor (33), a first valve and a second valve.

Abstract: Semiconductor structures and fabrication methods thereof are provided. The method may include providing a to-be-etched layer; forming a plurality of core layers on the to-be-etched layer, wherein a first opening and a second opening are formed between different adjacent core layers and a width of the first opening is smaller than a width of the second opening; forming a first sacrificial material layer on the to-be-etched layer and the plurality of core layers; forming a second sacrificial layer on a portion of the first sacrificial material layer in the first opening to form a sacrificial structure in the first opening; removing the plurality of core layers after forming the sacrificial structure; forming sidewall spacers on sidewall surfaces of the sacrificial structure after removing the plurality of core layers; and removing the sacrificial structure after forming the sidewall spacers.

Abstract: The present disclosure provides a method and a device for transaction clearing. The method includes receiving first clearing requests transmitted by a quantity N of terminals, where N>1; according to the first clearing requests, acquiring transaction data of the quantity N of terminals from a database; initializing a cache queue, and loading the transaction data into the cache queue; reading the transaction data in the cache queue, and performing a clearing process on the transaction data; and writing a clearing result into the database and feeding back the terminals with an execution result of the first clearing requests.

Abstract: Semiconductor structure and method of forming semiconductor structure are provided. The semiconductor structure includes a substrate, a first isolation structure, and a first nanostructure and a second nanostructure on two sides of the first isolation structure. The semiconductor structure also includes a second isolation structure, and a third nanostructure and a fourth nanostructure on two sides of the second isolation structure. A top of the second isolation structure is lower than a top of the first isolation structure. The semiconductor structure also includes a first gate structure and a second gate structure. The first gate structure and the second gate structure expose a top surface of the first isolation structure. The semiconductor structure also includes a third gate structure and a fourth gate structure. The third gate structure and the fourth gate structure are in contact with each other on a top surface of the second isolation structure.

Abstract: Semiconductor structure and formation method are provided. A method of forming a semiconductor structure includes providing a dielectric layer on a substrate, the dielectric layer including a first region and a second region under the first region, the first region including discrete first initial nanowires, and the second region including discrete second initial nanowires; etching the dielectric layer and the first initial nanowires in the first region to form a first opening in the first region, and forming first nanowires from the first initial nanowires; etching the dielectric layer at a bottom of the first opening and the second initial nanowires to form a second opening in the second region, and forming second nanowires from the second initial nanowires; forming a second source/drain layer in the second opening; forming an isolation layer on the second source/drain layer; and forming a first source/drain layer in the first opening.

Abstract: Semiconductor structure and fabrication method are provided. The semiconductor structure includes a substrate, including a first region and a second region; a plurality of fins, formed on the first region of the substrate; a first isolation structure, formed on the first region between adjacent fins and on the second region of the substrate; a second isolation structure, formed in each fin and in the first isolation structure, over the first region of the substrate; and a power rail, formed in the isolation structure and partially in the substrate of the second region.

Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a target etching layer; sequentially forming an initial mask layer, an anti-reflection layer, and a patterned structure on the target etching layer; performing a first etching process on the anti-reflection layer to remove a surface portion of the anti-reflection layer using the patterned structure as a mask; performing a surface treatment process on the patterned structure; and performing a second etching process on the anti-reflection layer until exposing a surface of the initial mask layer.