Abstract: A biometric authentication system is configured to perform a biometric authentication operation based on biometric information of an occupant in a passenger compartment of a vehicle and is configured to permit starting of a travel driving force source in the vehicle based on a condition that biometric authentication is established in the biometric authentication operation. The biometric authentication system includes: a biometric information detecting unit configured to detect the biometric information; and a notification unit configured to issue a notification dependent on non-establishment of biometric authentication in the biometric authentication operation to the occupant. The notification unit is configured to issue the notification dependent on the non-establishment of the biometric authentication based on a condition that a brake pedal is depressed at the time of detecting the biometric information by the biometric information detecting unit when the biometric authentication is not established.

Abstract: In a method of producing a test-sample for a transmission electron microscope, it is so arranged that a massive body in a rectangular parallelepiped shape including a multiple quantum well active layer is cut out from a laser diode being a workpiece; thereafter, a test-sample is produced in which tilting oblique cutoff portions are formed at corner portions contiguously bordering on an upper surface of the massive body, so that surface-part active layers can be visually identified thereat; and thereafter, the test-sample is made thinner, and also an observation test-sample is cut out therefrom by taking on, as references, two surface-part active layers visually identifiable at the tilting oblique cutoff portions.

Abstract: A semiconductor layer (2,3) is provided on a substrate (1). A gate electrode (4), a source electrode (5) and a drain electrode (6) are provided on the semiconductor layer (3). A first passivation film (7) covers the gate electrode (4) and the semiconductor layer (3). A source field plate (9) is provided on the first passivation film (7), and extends from the source electrode (5) to a space between the gate electrode (4) and the drain electrode (6). A second passivation film (10) covers the first passivation film (7) and the source field plate (9). An end portion on the drain electrode (6) side of the source field plate (9) is curved to be rounded.

Abstract: A test method for a semiconductor device having a package with airtight space, which is formed between a substrate wafer on which an element is formed and a cap wafer which is provided being opposite to the substrate wafer, comprises an applying water process in which the semiconductor device is exposed to high moisture atmosphere and cooled and a leak discrimination process in which power is supplied to the element which is formed on the substrate wafer and leak of the package is discriminated by detecting a sound wave which is generated by the semiconductor device.

Abstract: A semiconductor layer (2,3) is provided on a substrate (1). A gate electrode (4), a source electrode (5) and a drain electrode (6) are provided on the semiconductor layer (3). A first passivation film (7) covers the gate electrode (4) and the semiconductor layer (3). A source field plate (9) is provided on the first passivation film (7), and extends from the source electrode (5) to a space between the gate electrode (4) and the drain electrode (6). A second passivation film (10) covers the first passivation film (7) and the source field plate (9). An end portion on the drain electrode (6) side of the source field plate (9) is curved to be rounded.

Abstract: In order to enable a drain pan to be visually checked for contamination without requiring a complicated operation, the present invention is configured so as to be equipped with: a housing; a drain pan provided inside the housing; a drain pump for pumping up drain water accumulated in the drain pan; an opening provided in a side surface of the housing; and a cover member attached to the opening and covering the opening. When the cover member is detached from the opening at least a portion of the drain pan can be viewed from the opening.

Abstract: A semiconductor layer (2,3) is provided on a substrate (1). A gate electrode (4), a source electrode (5) and a drain electrode (6) are provided on the semiconductor layer (3). A strongly correlated electron system material (12) is connected between the gate electrode (4) and the source electrode (5).

Abstract: In the container, when the cap is capped on the container opening portion, an inner wall surface of a cylindrical sub-fitting wall portion of the cap and an outer wall surface of a large diameter opening portion of the container opening portion closely contact each other, and an outer wall surface of a cylindrical main fitting wall portion of the cap and an inner wall surface of a small diameter opening portion of the container opening portion closely contact each other. In this way, pressing force that is applied to the outer wall surface of the cylindrical main fitting wall portion of the cap from the inner wall surface of the small diameter opening portion of the container opening portion is increased.

Abstract: A semiconductor layer (2,3) is provided on a substrate (1). A gate electrode (4), a source electrode (5) and a drain electrode (6) are provided on the semiconductor layer (3). A first passivation film (7) covers the gate electrode (4) and the semiconductor layer (3). A source field plate (9) is provided on the first passivation film (7), and extends from the source electrode (5) to a space between the gate electrode (4) and the drain electrode (6). A second passivation film (10) covers the first passivation film (7) and the source field plate (9). The first passivation film (7) has a quasi-conductive thin film (8) provided at least between the gate electrode (4) and the drain electrode (6) and having an electric resistivity of 1.0 ?cm to 1010 ?cm.

Abstract: A test method for a semiconductor device comprising a substrate wafer in which an element is formed and a material through which an infrared ray can be transmitted and a package having airtight space between a cap wafer which is provided being opposite to the substrate wafer, and which includes an applying water process in which a semiconductor device is exposed to high moisture atmosphere and a leak discrimination process in which an infrared ray from the semiconductor device is detected and leak of the package is discriminated based on absorption of the infrared ray by water molecules.

Abstract: A semiconductor layer (2,3) is provided on a substrate (1). A gate electrode (4), a source electrode (5) and a drain electrode (6) are provided on the semiconductor layer (3). A first passivation film (7) covers the gate electrode (4) and the semiconductor layer (3). A source field plate (9) is provided on the first passivation film (7), and extends from the source electrode (5) to a space between the gate electrode (4) and the drain electrode (6). A second passivation film (10) covers the first passivation film (7) and the source field plate (9). The first passivation film (7) has a quasi-conductive thin film (8) provided at least between the gate electrode (4) and the drain electrode (6) and having an electric resistivity of 1.0 ?cm to 1010 ?cm.

Abstract: An annular protruding portion (17) is provided around an inner plug (13) at a radial interval on an annular horizontal wall portion (20) of a cap body 4. Between an annular flange portion (43a) of the inner plug (13) and the annular protruding portion (17), an annular accumulating groove portion (33) is provided. Particularly in the case of a liquid content, the liquid content may be scattered from within a cylindrical guide portion (42) when a lid member (5) is placed after use. The liquid content, however, is blocked by the annular protruding portion (17) and prevented from flowing further outward, while interfering with a top surface portion (51) and a cylindrical scattering suppression portion (55) of the lid member (5). Thus, downward flow of the liquid content along the outer wall surface of the annular horizontal wall portion (20) of a main cap member (11) can be suppressed.

Abstract: In order to enable a drain pan to be visually checked for contamination without requiring a complicated operation, the present invention is configured so as to be equipped with: a housing; a drain pan provided inside the housing; a drain pump for pumping up drain water accumulated in the drain pan; an opening provided in a side surface of the housing; and a cover member attached to the opening and covering the opening. When the cover member is detached from the opening at least a portion of the drain pan can be viewed from the opening.

Abstract: A vehicle antitheft system includes a house security device and a vehicle security device. The house security device includes a detection unit and a transmission unit configured to transmit a notification when a state change of a predetermined security unit is detected by the detection unit. The vehicle security device includes a reception unit configured to receive the notification transmitted from the transmission unit and a function control unit configured to control a vehicle antitheft function depending on whether the notification is received by the reception unit. The function control unit is configured to release the vehicle antitheft function when the notification is not received and a regular vehicle key is used to operate a vehicle, and to restrict releasing of the vehicle antitheft function when the notification is received and the regular vehicle key is used to operate the vehicle.

Abstract: In the container, when the cap is capped on the container opening portion, an inner wall surface of a cylindrical sub-fitting wall portion of the cap and an outer wall surface of a large diameter opening portion of the container opening portion closely contact each other, and an outer wall surface of a cylindrical main fitting wall portion of the cap and an inner wall surface of a small diameter opening portion of the container opening portion closely contact each other. In this way, pressing force that is applied to the outer wall surface of the cylindrical main fitting wall portion of the cap from the inner wall surface of the small diameter opening portion of the container opening portion is increased.

Abstract: An annular protruding portion (17) is provided around an inner plug (13) at a radial interval on an annular horizontal wall portion (20) of a cap body 4. Between an annular flange portion (43a) of the inner plug (13) and the annular protruding portion (17), an annular accumulating groove portion (33) is provided. Particularly in the case of a liquid content, the liquid content may be scattered from within a cylindrical guide portion (42) when a lid member (5) is placed after use. The liquid content, however, is blocked by the annular protruding portion (17) and prevented from flowing further outward, while interfering with a top surface portion (51) and a cylindrical scattering suppression portion (55) of the lid member (5). Thus, downward flow of the liquid content along the outer wall surface of the annular horizontal wall portion (20) of a main cap member (11) can be suppressed.

Abstract: A vehicle antitheft system includes a house security device and a vehicle security device. The house security device includes a detection unit and a transmission unit configured to transmit a notification when a state change of a predetermined security unit is detected by the detection unit. The vehicle security device includes a reception unit configured to receive the notification transmitted from the transmission unit and a function control unit configured to control a vehicle antitheft function depending on whether the notification is received by the reception unit. The function control unit is configured to release the vehicle antitheft function when the notification is not received and a regular vehicle key is used to operate a vehicle, and to restrict releasing of the vehicle antitheft function when the notification is received and the regular vehicle key is used to operate the vehicle.

Abstract: A method of manufacturing a nitride semiconductor device includes: forming a transistor having a gate electrode Schottky-joined to a nitride semiconductor layer; performing high-temperature annealing at a temperature of 200 to 360° C. for 8 to 240 hours on the transistor; and after the high-temperature annealing, performing RF burn-in by applying radiofrequency power to the transistor at a channel temperature of 180 to 360° C.

Abstract: A cap body of a cap includes: a cylindrical inner wall section to be fitted into an inner wall surface of a container mouth section; an annular wall section that extends obliquely in an upper direction toward a radial-direction center integrally from an inner wall surface of the cylindrical inner wall section, has a lower wall surface of a truncated conical shape, and has a discharge hole in a radial-direction center portion; a check valve disposed above the annular wall section to open or close the discharge hole in such a manner that a valve section is detached from or seated on an annular valve seat around the discharge hole; and a guiding tubular body disposed above the check valve and having a discharge passage of contents from the discharge hole. Therefore, at the time of using the contents, the contents can be smoothly discharged to the outside.

Abstract: A method of manufacturing a nitride semiconductor device includes: forming a transistor having a gate electrode Schottky-joined to a nitride semiconductor layer; performing high-temperature annealing at a temperature of 200 to 360° C. for 8 to 240 hours on the transistor; and after the high-temperature annealing, performing RF burn-in by applying radiofrequency power to the transistor at a channel temperature of 180 to 360° C.