Abstract: The invention relates to a method for reducing losses during the commutation of a free-running, driven power converter valve (T2) of an invertor phase (2) to a current-accepting power converter valve (T1) of said invertor phase (2). According to the invention, the current-accepting power converter valve (T1) is switched on at the beginning of the commutation process and the free-running, driven power converter valve (T2) is rapidly switched off as soon as the value of its drain voltage (UD) is zero. The losses during the commutation process can thus be significantly reduced in a simple manner.

Abstract: An electronic switching device includes at least one first and one second semiconductor component, with a first anode connection and a second cathode connection being short-circuited. A control voltage that can be applied to a first grid connection is also at least partially present at a second grid connection. This reduces the forward resistance of the electronic switching device in the switched-on state.

Abstract: A vertical semiconductor component having a semiconductor body of a first conductivity type is described. In a surface region of the semiconductor body, at least one zone of a second conductivity type, opposite to the first conductivity type, is embedded. Regions of the second conductivity type are provided in the semiconductor body in a plane running substantially parallel to the surface of the surface region. The regions are in this case sufficiently highly doped that they cannot be depleted of charge carriers when a voltage is applied.

Abstract: A circuit arrangement for precharging the capacitor connected to the output of a line-commutated power converter is described, where an element which limits the charging current of the capacitor to a level which is largely independent of the charging voltage is connected between a direct voltage output of the power converter and the respective terminal of the capacitor.

Abstract: A semiconductor configuration, in particular based on silicon carbide, is specified which rapidly limits a short-circuit current to an acceptable current value. For this purpose, when a predetermined saturation current is exceeded, a lateral channel region is pinched off, and the current is limited to a value below the saturation current.

Abstract: A switching device including a movable contact member. The movable contact member produces an isolating distance and includes an integral semiconductor switching element.

Abstract: A device for limiting an alternating electric current includes a least one passive semiconductor configuration and a protection circuit. The semiconductor configuration is configured such that when a forward voltage is applied thereto, a forward current flows through the semiconductor configuration. The forward current increases monotonously with the forward voltage up to a saturation current at an associated saturation voltage. At a forward voltage above the saturation voltage, the forward current is limited to a limiting current that is smaller than the saturation current. The semiconductor configuration is further configured such that when a reverse voltage is applied, a reverse current flows through the passive semiconductor configuration.

Abstract: The switching functions of switching a load on and off in normal operation and in fault operation are implemented in a simple manner in an electronic branch circuit switch, which is advantageously made with silicon carbide semiconductor switching elements and has a potential-free control device, a device for detection and immediate shutoff in the event of a short-circuit, and a protection device for detection and shutoff against overload currents, as well as an overvoltage limiting device.

Abstract: A p-n junction is connected between two terminals. The p-n junction is formed between two semiconductor regions of a semiconductor with a breakdown field strength of at least 10.sup.6 V/cm. A channel region, which adjoins the p-n junction is connected in series with a silicon component between the two terminals. The channel region is provided in a first of the two semiconductor regions. A depletion zone of the p-n junction carries the reverse voltage in the off state of the silicon component.

Abstract: An electronic switch with a switching element of the type of a semiconductor switch with the mode of operation of at least one FET, so that due to the technology it also has an internal body diode in inverse operation. A control circuit for executing the operating commands is set up so that gate in inverse operation receives such a voltage that the body diode is still currentless. In addition, a functional unit of the control circuit is set up to cause the switching element to assume the ON conducting state as a function of a commutation voltage or a commutation current, i.e., in inverse operation.

Abstract: A semiconductor configuration includes a first semiconductor region which has a predetermined conductivity type and a first surface. There is a contact region disposed on the first surface of the first semiconductor region. There is a second semiconductor region disposed within the first semiconductor region underneath the contact region which has a conductivity type opposite the predetermined conductivity type of the first semiconductor region. A first p-n junction having a first depletion zone is formed between the first semiconductor region and the second semiconductor region. The second semiconductor region extends further than the contact region in all directions parallel to the first surface of the first semiconductor region to form at least one lateral channel region with a bottom in the first semiconductor region. The at least one lateral channel region is bounded toward its bottom by the first depletion zone of the first p-n junction.

Abstract: A solid-state switching element that works with at least one semiconductor region or a pair of antiserially arranged semiconductor regions having characteristic curves similar to those of FETs. An internal body diode in inverse operation is also provided. In addition to having a drain and a gate, each of the semiconductor regions has two source electrodes, with several cells combined with the electrodes in cell design. One source serves as a load current electrode, called a load source, and the other source is available as a gate electrode, called a control source. The effective semiconductor region of the load source is larger than the effective semiconductor region of the control source.

Abstract: An AC power controller includes at least two semiconductor regions reverse-connected in series. Each semiconductor region has an electron donor (source), an electron sink (drain) and an electron flow control electrode (gate) with characteristic curves such as those exhibited by FETs. Each semiconductor region also has an internal body diode. The gate-source voltage of a respective semiconductor region in the forward direction is set to be large enough to establish a desired limiting of the drain-source current. Yet, the gate-source voltage of the semiconductor region in the inverse mode is set to be large enough for the body diode to remain de-energized.

Abstract: An n- or p-doped semiconductor region accommodates the depletion zone of an active area of the semiconductor component with a vertical extension dependent upon an applied blocking voltage. The junction termination for the active area is constituted with a semiconductor doped oppositely to the semiconductor region, and is arranged immediately adjacently around the active area on or in a surface of the semiconductor region. The lateral extension of the junction termination is greater than the maximum vertical extension of the depletion zone, and the semiconductor region as well as the junction termination are constituted with a semiconductor with a band gap of at least 2 eV.

Abstract: Thyristor with an npnp layer sequence, in which a zone (14) enriched with generation and recombination centers and formed by proton irradiation is provided underneath the triggering contact (7) in the n-type base (3), which enriched zone defines, by means of its distance (d) from the cathode-end main surface (15), a reduced breakover voltage at which a controllable overhead triggering of the thyristor occurs.

Abstract: For increasing the electric strength of a semiconductor component that comprises a sequence of semiconductor layers of alternating conductivity type and which is adapted to be charged with a voltage that biases at least one of the p-n junctions that separate the layers from one another in the non-conducting direction, the carrier life is reduced only in the lateral region of the edge termination of this p-n junction. The carrier life is reduced by irradiation with electrons or protons or by introducing atoms having recombination properties.

Abstract: Thyristor with defined lateral resistor and method for the manufacturing thereof. The thyristor has a resistor area (5) for the generation of a lateral resistor, for example between an emitter field (8) and an auxiliary emitter field (7), whereby the resistor are (5) has a defined lower doping concentration than the layer (2) surrounding it. The defined lower doping concentration is generated by recesses (3) in an occupation layer and can be adjusted by the ratio of the widths alternately arranged recesses (3) and ribs (4). The recess (3) and the ribs (4) are generated either by diffusion and subsequent etching or by implantation with an implantation mask, before the deposition layer is driven into the semiconductor body of the thyristor by heat supply from a surface.

Abstract: A thyristor with an npnp layer sequence in which the p-emitter (4) comprises a sub-region (15) in the lateral region of an ignition contact (8) or of a light-sensitive zone (17a), this sub-region (15) being provided with a higher doping concentration that the remaining part of the p-emitter (4). A controllable over voltage ignition of the thyristor occurs at an adjustable, reduced breakover voltage, such breakover voltage being established by selectively irradiating a zone of the thyristor to reduce the breakover voltage point.

Abstract: A light-triggerable thyristor comprises a cathode contact and a light conductor arranged in a bore thereof for supplying trigger energy. In order to obtain optimally low losses of the trigger energy and to guarantee simple assembly and interchangeability, the end of the light conductor at the side of the thyristor is surrounded by a rigid sleeve which is pluggable into a sleeve-shaped insert mounted in the bore. In particular, a central region of the cathode contact is fashioned raised in comparison to a flange-like projection of the cathode contact which is connected to a ceramic envelope, and the central region is provided with a groove which serves for receiving an angled portion of the rigid sleeve. The invention is particularly suited for power thyristors in high-voltage DC transmission systems.

Abstract: A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si.sup.30 (n,.gamma.) Si.sup.31 .beta..sup.- P.sup.31 includes the steps of covering the silicon crystal wafer with neutron-absorbing materials of different thicknesses during the irradiation, and selecting materials having isotopes having a high absorption cross-section which yield stable isotopes in the nuclear reaction having small or short-lived activity. Suitable isotopes are B.sup.10, Cd.sup.113, Sm.sup.149, Gd.sup.155 and Gd.sup.157. The regions are generated photolithographically. By such specific material selection, very small layer thicknesses can be used and microfine surface zones or areas can be doped with high geometrical precision and large penetration depth. The method is particularly suited for manufacturing power thyristors.