Abstract: A Schottky power diode includes a semiconductor substrate having a given band gap, a semi-insulating intermediate layer disposed on the substrate, an insulating layer disposed on the intermediate layer and a Schottky contact disposed on the intermediate layer, whereby the intermediate layer is disposed between the Schottky contact and the substrate, the intermediate layer having a density of localized states from 10.sup.17 to 10.sup.20 eV cm.sup.-3, the intermediate layer having a band gap larger than the given band gap in the semiconductor substrate, and the intermediate layer having a resistivity of between 10.sup.5 and 10.sup.11 ohm cm. On the other hand the insulating layer may be disposed on the substrate and the intermediate layer may be at least partly disposed on the insulating layer.

Abstract: A Schottky power diode includes a semiconductor substrate, an insulating layer disposed on the substrate, a Schottky contact making contact with the substrate through a window formed in the insulating layer, and a semi-insulating layer disposed on the insulating layer and electrically connected to the Schottky contact for receiving a fixed potential at a lateral distance from the Schottky contact.