Abstract: A retinal projection display system includes at least one visible light source for projecting a visible light image, an infrared light source for projecting infrared light, a scanning mirror having a field of view larger than the visible light image, a reflective surface on which the visible light image is projected and on which the infrared light is reflected at least partially towards an eye of a user, wherein the reflective surface is larger than the visible light image, at least one infrared photodetector for receiving reflected infrared light that reflects off of the eye of the user, and a hardware computation module comprising a processor and a memory, the hardware computation module configured to determine a gaze direction of the user based at least in part on the reflected infrared light.

Abstract: A retinal projection display system includes a light source for projecting an image, a scanning mirror having a field of view larger than the image, and a reflective surface on which the image is projected, wherein the reflective surface is larger than the image. The scanning mirror projects the image onto a viewable region of the reflective surface such that the image is projected into a retina of a user.

Abstract: A light detection element includes: a plurality of magnetic elements, wherein each of the magnetic elements includes a first ferromagnetic layer that is irradiated with light and a second ferromagnetic layer and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and wherein at least two of the magnetic elements are arranged to be inside a spot of the light applied to the first ferromagnetic layers of the at least two of the magnetic elements.

Abstract: A integrated light source module includes a planar optical waveguides layer having N light incident ports aligned with respect to each other, M light exit ports aligned with respect to each other, and optical waveguides connected to the N light incident ports and the M light exit ports, and N optical semiconductor devices facing each of the N light incident ports arranged so that light emitted from each of the N optical semiconductor devices can be incident on each of the N light incident ports, wherein light emitted from the M light exit ports can be applied to an object to be irradiated.

Abstract: This optical device includes at least one magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a laser diode, and a waveguide, in which the waveguide includes at least one input waveguide optically connected to the laser diode and an output waveguide connected to the input waveguide, and at least some of light propagating in at least one of the input waveguide and the output waveguide is applied to the magnetic element.

Abstract: An optical device that includes at least one magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a substrate; and a waveguide is provided, wherein the waveguide and the magnetic element are located on or above the substrate, and wherein at least some of light propagating in the waveguide is applied to the magnetic element.

Abstract: An optical sensor includes a wavelength filter configured to transmit light in a specific wavelength range and a magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The light passing through the wavelength filter is applied to the magnetic element and the light applied to the magnetic element is detected.

Abstract: A receiving device includes a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer is configured to be irradiated with light containing an optical signal with a change of intensity of the light, and wherein the receiving device is configured to receive the optical signal on a basis of an output voltage from the magnetic element.

Abstract: A transceiver device includes: a receiving device including a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the receiving device is configured to receive an optical signal; a transmission device including a modulated light output element, wherein the transmission device is configured to transmit an optical signal; and a circuit chip including an integrated circuit electrically connected to the magnetic element and the modulated light output element.

Abstract: An electrode structure includes: a metal film with an opening formed in a part of the metal film; and a transparent conductive film disposed in the opening, wherein the transparent conductive film is electronically connected to an element and overlaps with the element as viewed in a plan view in a thickness direction of the transparent conductive film.

Abstract: A photodetection element includes: a first ferromagnetic layer configured to be irradiated with light; a second ferromagnetic layer; and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer includes a first region in contact with the spacer layer and a second region disposed in a position farther from the space layer than the first region, the first region is made of CoFeB alloy, and the second region is a magnetic material containing Fe and Gd as major constituent elements.

Abstract: A transmission device of the present disclosure is a transmission device that transmits a visible light signal to a receiving device, and includes a laser light source configured to emit visible light, and an optical modulator configured to change intensity of the visible light and generate a visible light signal, in which the optical modulator has an optical waveguide that serves as a transmission path for the visible light, and the optical waveguide is formed of a material containing lithium niobate.

Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a free layer (FL) has a first interface with a MgO tunnel barrier, a second interface with a Mo or W Hk enhancing layer, and is comprised of FexCoyBz wherein x is 66-80, y is 5-9, z is 15-28, and (x+y+z)=100 to simultaneously provide a magnetoresistive ratio >100%, resistance x area product <5 ohm/?m2, switching voltage <0.15V (direct current), and sufficient Hk to ensure thermal stability to 400° C. annealing. The FL may further comprise one or more M elements such as O or N to give (FexCoyBz)wM100-w where w is >90 atomic %. Alternatively, the FL is a trilayer with a FeB layer contacting MgO to induce Hk at the first interface, a middle FeCoB layer for enhanced magnetoresistive ratio, and a Fe or FeB layer adjoining the Hk enhancing layer to increase thermal stability.

Abstract: Various embodiments may provide a semiconductor package. The semiconductor package may include a substrate including a via hole. The semiconductor package may also include a chip attached to the substrate. The semiconductor package may further include a prefabricated ferromagnetic pin having a first portion held by the via hole, a second portion extending from a first end of the first portion, and a third portion extending from a second end of the first portion opposite the first end. The semiconductor package may also include a first magnetic shield structure attached to or extended from the second portion of the prefabricated ferromagnetic pin. The semiconductor package may further include a second magnetic shield structure attached to or extended from the third portion of the prefabricated ferromagnetic pin, such that at least a portion of the chip is between the first magnetic shield structure and the second magnetic shield structure.

Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a free layer (FL) has a first interface with a MgO tunnel barrier, a second interface with a Mo or W Hk enhancing layer, and is comprised of FexCoyBz wherein x is 66-80, y is 5-9, z is 15-28, and (x+y+z)=100 to simultaneously provide a magnetoresistive ratio >100%, resistance x area product <5 ohm/?m2, switching voltage <0.15 V (direct current), and sufficient Hk to ensure thermal stability to 400° C. annealing. The FL may further comprise one or more M elements such as O or N to give (FexCoyBz)wM100-w where w is >90 atomic %. Alternatively, the FL is a trilayer with a FeB layer contacting MgO to induce Hk at the first interface, a middle FeCoB layer for enhanced magnetoresistive ratio, and a Fe or FeB layer adjoining the Hk enhancing layer to increase thermal stability.

Abstract: Various embodiments may provide a memory cell including a magnetic pinned layer with a substantially fixed magnetization direction, a crystalline spacer layer in contact with the magnetic pinned layer, and a magnetic storage layer. The magnetic storage layer may include an amorphous interface sub-layer in contact with the crystalline spacer layer, the amorphous interface sub-layer including a first alloy of iron (Fe) and at least one element. The amorphous storage layer may also include an amorphous enhancement sub-layer in contact with the amorphous interface sub-layer, the amorphous enhancement sub-layer including a second alloy of iron (Fe) and at least one element. The memory cell may additionally include a cap layer in contact with the amorphous enhancement sub-layer. A concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element comprised in the second alloy may be different.

Abstract: Various embodiments may provide a semiconductor package. The semiconductor package may include a substrate including a via hole. The semiconductor package may also include a chip attached to the substrate. The semiconductor package may further include a prefabricated ferromagnetic pin having a first portion held by the via hole, a second portion extending from a first end of the first portion, and a third portion extending from a second end of the first portion opposite the first end. The semiconductor package may also include a first magnetic shield structure attached to or extended from the second portion of the prefabricated ferromagnetic pin. The semiconductor package may further include a second magnetic shield structure attached to or extended from the third portion of the prefabricated ferromagnetic pin, such that at least a portion of the chip is between the first magnetic shield structure and the second magnetic shield structure.

Abstract: According to one embodiment, a strain sensing element includes a film unit being deformable, a first and a second magnetic unit, and a strain sensor. The first magnetic unit is provided on the film unit and is arranged with the film unit in a first direction. The first magnetic unit includes a first magnetic body layer and a first intermediate magnetic layer. The second magnetic unit is provided on the film unit and is arranged with the first magnetic unit in a second direction crossing the first direction. The second magnetic unit includes a second magnetic body layer and a second intermediate magnetic layer. The strain sensor is provided on the film unit between the first magnetic unit and the second magnetic unit. An electrical characteristic of the strain sensor changes according to a deformation of the film unit.

Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a free layer (FL) has a first interface with a MgO tunnel barrier, a second interface with a Mo or W Hk enhancing layer, and is comprised of FexCoyBz wherein x is 66-80, y is 5-9, z is 15-28, and (x+y+z)=100 to simultaneously provide a magnetoresistive ratio >100%, resistance x area product <5 ohm/?m2, switching voltage <0.15 V (direct current), and sufficient Hk to ensure thermal stability to 400° C. annealing. The FL may further comprise one or more M elements such as O or N to give (FexCoyBz)wM100-w where w is >90 atomic %. Alternatively, the FL is a trilayer with a FeB layer contacting MgO to induce Hk at the first interface, a middle FeCoB layer for enhanced magnetoresistive ratio, and a Fe or FeB layer adjoining the Hk enhancing layer to increase thermal stability.

Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a free layer (FL) has a first interface with a MgO tunnel barrier, a second interface with a Mo or W Hk enhancing layer, and is comprised of FexCoyBz wherein x is 66-80, y is 5-9, z is 15-28, and (x+y+z)=100 to simultaneously provide a magnetoresistive ratio >100%, resistance x area product <5 ohm/?m2, switching voltage <0.15V (direct current), and sufficient Hk to ensure thermal stability to 400° C. annealing. The FL may further comprise one or more M elements such as O or N to give (FexCoyBz)wM100-w where w is >90 atomic %. Alternatively, the FL is a trilayer with a FeB layer contacting MgO to induce Hk at the first interface, a middle FeCoB layer for enhanced magnetoresistive ratio, and a Fe or FeB layer adjoining the Hk enhancing layer to increase thermal stability.