Abstract: According to one embodiment, a strain sensing element is provided on a film unit configured to be deformed. The strain sensing element includes a functional layer, a first magnetic layer, a second magnetic layer, and a spacer layer. The functional layer includes at least one of an oxide and a nitride. The second magnetic layer is provided between the functional layer and the first magnetic layer. A magnetization of the second magnetic layer is variable in accordance with a deformation of the film unit. The spacer layer is provided between the first magnetic layer and the second magnetic layer. At least a part of the second magnetic layer is amorphous and includes boron.

Abstract: According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Abstract: A method of manufacturing a pressure sensor comprises: above a film portion formed on one surface of a substrate, depositing a first magnetic layer, a second magnetic layer and an intermediate layer between the first and second magnetic layers on one surface of a substrate; removing the deposited layers leaving a part thereof; and removing a part of the substrate from another surface of the substrate. By removing the deposited layers leaving a part thereof, a strain detecting element is formed in a part of a first region, the strain detecting element comprising the first magnetic layer, the second magnetic layer and the intermediate layer. By removing a part of the substrate, a part of the first region of the substrate is removed. In addition, the deposition of the first magnetic layer is performed with the substrate being bended.

Abstract: A magnetic memory includes a deformable base plate, a spin device element coupled with the deformable base plate and storing a data as a magnetization direction, and a bending mechanism to bend the deformable base plate. At least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: According to one embodiment, a current sensor includes a first sensor element and a power line. The first sensor element includes a first electrode, a second electrode, and a first stacked body. The first stacked body is provided between the first electrode and the second electrode. The first stacked body includes a first magnetic layer, a second magnetic layer and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and the second electrode. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. A magnetization of the second magnetic layer changes according to a magnetic field generated by a current flowing through the power line. At least a portion of the second magnetic layer is amorphous.

Abstract: According to an embodiment, a pressure sensor includes a substrate, a support part, a flexible membrane part, and a magnetoresistive element. The support part is adhered on the substrate by using a first adhesive material with a first Young's modulus and a second adhesive material with a second Young's modulus different from the first Young's modulus. The membrane part is supported by the support part. The magnetoresistive element is provided on the membrane part, and includes a first magnetic layer, a second magnetic layer, and a spacer layer provided between the first magnetic layer and the second magnetic layer.

Abstract: An inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Abstract: According to one embodiment, a pressure sensor includes a support, a film unit supported by the support, having an upper surface, and capable of being deformed, and a first sensing element provided on the upper surface. The first sensing element includes a first magnetic layer, a second magnetic layer provided apart from the first magnetic layer and a first intermediate unit including a first intermediate layer including a portion provided between the first and second magnetic layers. The first magnetic layer extends in a first direction parallel to the upper surface, and a first major axis length of the first magnetic layer is longer than a first minor axis length. The second magnetic layer extends in a second direction parallel to the upper surface and crossing the first direction, and a second major axis length of the second magnetic layer is longer than a second minor axis length.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.

Abstract: According to one embodiment, an acoustic sensor includes a base and a first strain sensing element. The base includes a support and a first film unit supported by the support. The first film unit is flexible. The first strain sensing element is provided on a first surface of the first film unit. The first strain sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer. An angle between a magnetization of the first magnetic layer and a magnetization of the second magnetic layer is variable by an acoustic wave. The acoustic wave is transmitted to a first film unit by a first transmitting material in contact with the first film unit.

Abstract: According to one embodiment, a strain sensing element provided on a deformable substrate includes: a first magnetic layer; a second magnetic layer; a spacer layer; and a bias layer. Magnetization of the second magnetic layer changes according to deformation of the substrate. The spacer layer is provided between the first magnetic layer and the second magnetic layer. The second magnetic layer is provided between the spacer layer and the bias layer. The bias layer is configured to apply a bias to the second magnetic layer.

Abstract: According to one embodiment, a strain sensing element provided on a deformable substrate includes: a first magnetic layer; a second magnetic layer; a spacer layer; and a bias layer. Magnetization of the second magnetic layer changes according to deformation of the substrate. The spacer layer is provided between the first magnetic layer and the second magnetic layer. The second magnetic layer is provided between the spacer layer and the bias layer. The bias layer is configured to apply a bias to the second magnetic layer.

Abstract: According to one embodiment, a strain sensing element to be provided on a deformable substrate, the element includes: a reference layer; a magnetization free layer; and a spacer layer. Magnetization of the magnetization free layer changes in accordance with deformation of the substrate. The spacer layer is provided between the reference layer and the magnetization free layer. The magnetization free layer has: a first magnetic layer; a second magnetic layer; and a magnetic coupling layer. The first magnetic layer is provided in contact with the spacer layer. The second magnetic layer is provided to be separated from the first magnetic layer. The magnetic coupling layer is provided between the first magnetic layer and the second magnetic layer. Magnetization of the first magnetic layer is anti-parallel to magnetization of the second magnetic layer.

Abstract: According to one embodiment, a pressure sensor includes a film part, and a sensing unit. A circumscribing rectangle circumscribing a configuration of a film surface of the film part has a first side, a second side, a third side connected to one end of the first side and one end of the second side, a fourth side connected to one other end of the first side and one other end of the second side, and a centroid of the circumscribing rectangle. The circumscribing rectangle includes a first region enclosed by the first side, line segments connecting the centroid to the one end of the first side, and to the one other end of the first side. The sensing unit includes sensing elements provided on a portion of the film surface overlapping the first region. Each sensing element includes a first, second magnetic layers, and a spacer layer.

Abstract: A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate.

Abstract: A magnetic memory includes a plurality of memory cells and a data identification circuit. Each of the memory cells includes: a first bias node to which a first voltage is applied in data reading, the first voltage being a positive voltage; a second bias node to which a second voltage is applied in the data reading, the second voltage being a negative voltage having substantially the same absolute value as the first voltage; a connection node; a first spin device element connected between the first bias node and the connection node; and a second spin device element connected between the connection node and the second bias node. The first and second spin device elements operate differentially. The data identification circuit identifies data stored in each of the memory cells based on a polarity of a voltage generated on the connection node.

Abstract: According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.