Abstract: A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

Abstract: A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A constant of the resonance circuit is changed based on the result of comparison by the comparison circuit.

Abstract: An inexpensive and reliable vacuum processing apparatus is provided. The vacuum processing apparatus comprises a sealed gate located between two vacuum vessels for allowing them to communicate with each other and a sample subjected to processing to be transferred from one of the vacuum vessels to the other therethrough; and a gate valve located on a path of the gate, the gate valve including a first and second valve body facing a first and second opening, respectively, and a shaft to which the valve bodies are coupled at one end thereof, the gate valve selectively opening and closing each of the openings. The gate valve includes an axial drive section coupled to the other end of the shaft for moving the shaft in the axial direction thereof, and a rotary drive section located between the one end and the other end of the shaft for rotating the shaft about a predetermined pivot crossing the axis of the shaft.

Abstract: A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.

Abstract: The invention provides a semiconductor processing apparatus having a high throughput capable of appropriately coping with the positional displacement that may occur during transfer of the wafer after correcting the position thereof, without slowing down the transfer speed of the wafer. A position correction quantity of the wafer with respect to a vacuum robot is computed based on the outputs of a ? axis sensor for detecting the interception angle of the wafer during rotation of the vacuum robot and an R axis sensor for detecting the interception distance of the wafer during expansion and contraction of the vacuum robot. If the position correction quantity exceeds a predetermined standard value, an operation to change the position data is performed, and if the distance data obtained based on the outputs from the ? axis sensor and the R axis sensor exceeds a predetermined permissible value, it is determined that a displacement error has occurred and the operation is stopped.

Abstract: A ceramic film is formed by a spray method on a base material of an electrostatic attraction device. Electrode films for electrostatic attraction are formed by a spray method on a surface of the ceramic film. A ringular heater film is formed in a spray method between the electrode films in a radial direction of the electrode films. In addition, a ceramic film is formed by a spray method on upper surfaces of the electrode films and the heater film.

Abstract: A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.

Abstract: A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.

Abstract: Provided is a vacuum processing apparatus or processing method which, when films of a plurality of layers are etched into a predetermined shape, eliminates a deficiency in shape formed by sample processing, increases the aspect ratio of the processed shape, and provides a more precise shape.

Abstract: An inexpensive and reliable vacuum processing apparatus is provided. The vacuum processing apparatus comprises a sealed gate located between two vacuum vessels for allowing them to communicate with each other and a sample subjected to processing to be transferred from one of the vacuum vessels to the other therethrough; and a gate valve located on a path of the gate, the gate valve including a first and second valve body facing a first and second opening, respectively, and a shaft to which the valve bodies are coupled at one end thereof, the gate valve selectively opening and closing each of the openings. The gate valve includes an axial drive section coupled to the other end of the shaft for moving the shaft in the axial direction thereof, and a rotary drive section located between the one end and the other end of the shaft for rotating the shaft about a predetermined pivot crossing the axis of the shaft.

Abstract: The present invention provides a plasma processing apparatus for processing a sample on a sample stand in a vacuum container whose inside pressure is reduced, with a plasma generated in an upper space above the sample stand. The apparatus comprises: an electric discharge chamber disposed in the vacuum container and above the sample stand, and having a discharge-chamber sidewall surrounding the upper space; a vacuum chamber disposed in the vacuum container and below the electric discharge chamber, and in communication with the electric discharge chamber; a vacuum-chamber sidewall disposed inside the vacuum container to surround the sample stand, and constituting a side surface of the vacuum chamber; a first temperature regulator disposed outside the discharge-chamber sidewall to adjust a temperature of the discharge-chamber sidewall; and a second temperature regulator controlling a temperature of the vacuum-chamber sidewall to a value lower than the temperature of the discharge-chamber sidewall.

Abstract: The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof.

Abstract: The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof.

Abstract: A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.

Abstract: A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

Abstract: A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.

Abstract: A vacuum processing apparatus comprising a transfer unit 112 disposed at a center thereof, plural processing chambers 103, 104, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow controller unit 107 interposed between two processing chambers for supplying gas to the chambers.