Abstract: A vacuum processing apparatus including a transfer chamber inside of which an object wafer to be processed is transferred, and two processing chambers disposed outside of the transfer chamber and attached to the transfer chamber in a detachable manner. The inside of each processing chamber is decompressed so as to process the wafer being placed therein using a plasma generated from a processing gas supplied thereto, and two supply units supply the processing gas to the two processing chambers, respectively. The two supply units are disposed vertically outside of the transfer chamber and between the two processing chambers.

Abstract: A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit includes a setting unit for enabling a user to set a temperature of the semiconductor wafer and control unit for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.

Abstract: A plasma processing apparatus ands a plasma processing method of excellent mass production stability by controlling deposition films deposited on the wall of a vacuum vessel are provided. This apparatus comprises a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar covering a portion above the gas ring to define a vacuum processing chamber, an antenna, disposed above the bell jar, for supplying RF electric fields into the vacuum processing chamber to form plasmas, a sample table for placing a sample in the vacuum processing chamber, a Faraday shield disposed between the antenna and the bell jar and applied with an RF bias voltage, and a deposition preventive plate attached detachably to the inner surface of the gas ring excluding the blowing port for the processing gas.

Abstract: A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit 38 comprises: a setting unit 33 for enabling a user to set a temperature of the semiconductor wafer; and a control unit 26 for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.

Abstract: A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.

Abstract: A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.

Abstract: A heater function and an electrostatic chuck function are incorporated in a ceramic plate for placing a wafer, and the ceramic plate is fixed to a cooling jacket with ceramic bolts having a low coefficient of thermal conductivity with an intervening heat insulating member. In order to transmit heat input in the wafer to the water-cooling jacket with high repeatability, a heat-conducting member having elasticity in the vertical direction is sandwiched between the ceramic plate and the cooling jacket. The degradation of temperature distribution of wafers due to the radiant heat radiation from the sidewall of the ceramic plate to the chamber can be minimized by covering the circumference of the ceramic plate with a radiation insulator.

Abstract: A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.

Abstract: A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.

Abstract: The present invention relates to a microwave plasma processing apparatus, suited for generating a plasma by using microwaves, and a processing method. Microwaves propagated through a circular waveguide are tuned in the space thereof by a microwave tuner that is installed to match the impedance, and are introduced in a uniform and most efficient state into a discharge block having a plasma-resistant inner surface that is enlarged in a tapered form through a microwave introduction window. Then, a processing gas controlled to a predetermined pressure by a gas supplying structure and gas evacuating structure is turned into a plasma which is more uniform and is more dense by interaction of a microwave electric field that is efficiently introduced and a magnetic field produced by a solenoid coil.

Abstract: A detergent composition is disclosed. The composition comprises polymer particles having an average particle size of 50-500 .mu.m in 5% by weight sodium chloride aqueous solution and a modulus of elasticity of 1.times.10.sup.3 -5.times.10.sup.5 dyne/cm.sup.2 in said sodium chloride aqueous solution. It exhibits a superior physical or mechanical washing performance, and gives remarkably reduced irritation and minimal damage to the object being washed. When a germicide is incorporated in addition to the polymer particles, its sterilization effect is greatly enhanced.