Abstract: A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

Abstract: [PROBLEMS] To provide a heating electrode which can uniformly heat a material to be heated having an irregular shape and can stably perform heating/holding-convey of the material to be heated by the heating electrode; and a method for heating food by using the heating electrode. [MEANS FOR SOLVING PROBLEMS] An assembly of pin electrodes (10) formed by conductive pins are slidably arranged in a through hole (21) of a pin support table (20). A pressure-variable gas chamber (30) whose pressure is variable is connected to the pin support table (20). By applying a plus pressure or a minus pressure to the gas chamber (30), the pin electrodes (10) are displaced relatively to the pin support table (20).

Abstract: Problem to provide a container for an electromagnetic cooker which can be heated corresponding to impedance check frequency which differs depending on a manufacturer of an electromagnetic cooker or the like, can properly and easily set a heat generation characteristic, is excellent in marketability, configuration in use, disposability, handiness in cooking and the like, is suitable for retort foods, instant foods and the like, and exhibits high heating efficiency, means for resolution a container for an electromagnetic cooker includes a container body made of a non-conductive material and a conductive layer in a bottom portion of the container, wherein the ratio of resistance change (R?R0)/R0 of the conductive layer with respect to the impedance check frequency of a heating coil is set to 5.3 or more, and a ratio of inductance change (L?L0)/L0 of the conductive layer with respect to the impedance check frequency of the heating coil is set to ?0.17 or less. Here, R indicates the high-frequency resistance (.

Abstract: [PROBLEMS] To provide a heating electrode which can uniformly heat a material to be heated having an irregular shape and can stably perform heating/holding-convey of the material to be heated by the heating electrode; and a method for heating food by using the heating electrode. [MEANS FOR SOLVING PROBLEMS] An assembly of pin electrodes (10) formed by conductive pins are slidably arranged in a through hole (21) of a pin support table (20). A pressure-variable gas chamber (30) whose pressure is variable is connected to the pin support table (20). By applying a plus pressure or a minus pressure to the gas chamber (30), the pin electrodes (10) are displaced relatively to the pin support table (20).

Abstract: A method of forming a metal oxide film by the plasma CVD method and which includes reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.

Abstract: [Problem] To provide a container for an electromagnetic cooker which can be heated corresponding to impedance check frequency which differs depending on a manufacturer of an electromagnetic cooker or the like, can properly and easily set a heat generation characteristic, is excellent in marketability, configuration in use, disposability, handiness in cooking and the like, is suitable for retort foods, instant foods and the like, and exhibits high heating efficiency. [Means for Resolution] A container for an electromagnetic cooker includes a container body made of a non-conductive material and a conductive layer in a bottom portion of the container, wherein the ratio of resistance change (R?R0)/R0 of the conductive layer with respect to the impedance check frequency of a heating coil is set to 5.3 or more, and a ratio of inductance change (L?L0)/L0 of the conductive layer with respect to the impedance check frequency of the heating coil is set to ?0.17 or less.

Abstract: A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

Abstract: A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

Abstract: A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.

Abstract: A vapor deposition film formation method includes a step for arranging a surface wave generating device (10) using a microwave in a vacuum region, a step for continuously feeding a plastic film substrate (13) into the vacuum region so as to oppose to the surface wave generating device, a step of continuously supplying a reaction gas containing at least organic metal compound into the vacuum region, and a step for executing plasma reaction by the surface wave of the microwave from the surface wave generating device (10), thereby continuously forming a vapor deposition film on the surface of the film substrate (13). This method enables continuous formation of a vapor deposition film on the surface of a film substrate, especially a long film, by the surface wave plasma of the microwave.

Abstract: A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.

Abstract: A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.

Abstract: A microwave plasma processing device and a gas supply member capable of forming a uniform thin film on a substrate to be processed. The microwave plasma processing device comprises fixing means of fixing a substrate to be processed onto the center axis in a plasma processing chamber, exhaust means of depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and microwave introducing means of introducing a microwave into the plasma processing chamber to process it, wherein a microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing means, and the connection position of the microwave introducing means is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

Abstract: A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.

Abstract: A method of treating plastic containers with a chemical plasma by forming a film by CVD on the plastic containers by generating a glow discharge by feeding a gas for plasma treatment and energy such as microwaves for plasmatization into a plasma-treating chamber, wherein the plastic containers are cooled. This method effectively suppresses the plastic containers from being deformed, is capable of forming the film by CVD on the inner surfaces of the plastic containers consecutively for extended periods of time, and greatly enhances the productivity.

Abstract: A method of forming a metal oxide film by the plasma CVD method and comprising reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.

Abstract: A silicon oxide film is formed on the surfaces of a plastic substrate and contains methyl groups and methylene groups in a portion near the interface to the plastic substrate. The silicon oxide film exhibits not only excellent adhesion to the plastic substrate, softness and flexibility but also exhibits excellent gas shut-off property (gas barrier property), makes it possible to achieve excellent gas-shutoff property with a smaller film thickness than that of the conventional films, and can be mass-produced favorably.

Abstract: The present invention provides a method for manufacturing laminated material which can remove ear portions of a resin film extruded from an extruding machine and can directly laminate the resin film to a substrate and can make the processing of end portions of a laminated material after lamination unnecessary. The present invention also provides an apparatus used for such a manufacturing method. In the method for manufacturing laminated material which laminates a resin film formed by extruding molten thermoplastic resin from a T-die to a substrate, a laminating film is formed by cutting ear portions of the resin film before lamination and the laminating film is laminated to the substrate.

Abstract: A silicon oxide film is formed on the surfaces of a plastic substrate and contains methyl groups and methylene groups in a portion near the interface to the plastic substrate. The silicon oxide film exhibits not only excellent adhesion to the plastic substrate, softness and flexibility but also exhibits excellent gas shut-off property (gas barrier property), makes it possible to achieve excellent gas-shutoff property with a smaller film thickness than that of the conventional films, and can be mass-produced favorably.

Abstract: Disclosed is a method of treatment with a microwave plasma by maintaining a reduced pressure in a plasma-treating chamber for treatment with a plasma in which a substrate that is to be treated with a microwave plasma is contained, introducing a treating gas into the plasma-treating chamber and introducing microwaves into the plasma-treating chamber, wherein a metallic antenna is disposed in the plasma-treating chamber. The plasma is generated within a very short period of time maintaining stability after the microwaves are introduced into the plasma-treating chamber, and the treatment is accomplished maintaining stability.