Patents by Inventor Hidetoshi Matsumoto
Hidetoshi Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8155606Abstract: A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.Type: GrantFiled: March 22, 2011Date of Patent: April 10, 2012Assignee: Renesas Electronics CorporationInventors: Akira Kuriyama, Hidetoshi Matsumoto
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Patent number: 8076976Abstract: The present invention provides a technology capable of achieving an improvement in the characteristic of a power amplifier when a power amplifier mounted onto mobile communication equipment such as a cellular phone is comprised of the balance amplifier. One feature of an embodiment resides in that each of passive parts disposed in a low-band signal negative path and each of passive parts disposed in a low-band signal positive path are placed in positions where they are symmetric with respect to a center line of a semiconductor chip. Thus, the symmetry between the low-band signal negative path and the low-band signal positive path is enhanced. As a result, a loss in matching due to the difference between the low-band signal negative path and the low-band signal positive path can be enough reduced, and the characteristic of a low-band signal balance amplifier can be enhanced.Type: GrantFiled: December 28, 2009Date of Patent: December 13, 2011Assignee: Renesas Electronics CorporationInventors: Kanji Hayata, Akira Kuriyama, Masatoshi Hase, Hidetoshi Matsumoto
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Publication number: 20110230149Abstract: A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.Type: ApplicationFiled: March 22, 2011Publication date: September 22, 2011Inventors: AKIRA KURIYAMA, Hidetoshi Matsumoto
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Publication number: 20110221885Abstract: A transparent body inspecting device includes: a light application unit for applying light to a transparent body; an image capturing unit which captures an image of the transparent body and in which a depth of field is smaller than a height of the transparent body; an image capture driving unit for moving the image capturing unit in a direction in which the image capturing unit is brought close to the transparent body and in a direction in which the image capturing unit is brought away from the transparent body; and a defect determining unit for determining existence or nonexistence of a defect in the transparent body based on whether or not brightness of pixels in the image captured by the image capturing unit is nonuniform, wherein: the image capturing unit carries out image capture more than once while moving in the direction in which the image capturing unit is brought close to the transparent body or in the direction in which the image capturing unit is brought away from the transparent body; and when thType: ApplicationFiled: May 20, 2011Publication date: September 15, 2011Applicant: Asahi Glass Company, LimitedInventors: Toshihiko SUZUKI, Hidetoshi Matsumoto, Munehisa Kato, Makoto Kurumisawa
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Patent number: 8005445Abstract: A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.Type: GrantFiled: November 15, 2007Date of Patent: August 23, 2011Assignee: Renesas Electronics CorporationInventors: Akira Kuriyama, Hidetoshi Matsumoto
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Publication number: 20100301947Abstract: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.Type: ApplicationFiled: June 14, 2010Publication date: December 2, 2010Applicant: RENESAS TECHNOLOGY CORP.Inventors: Toru Fujioka, Toshihiko Shimizu, Masami Ohnishi, Hidetoshi Matsumoto, Satoshi Tanaka
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Publication number: 20100225401Abstract: The present invention provides a technology capable of achieving an improvement in the characteristic of a power amplifier when a power amplifier mounted onto mobile communication equipment such as a cellular phone is comprised of the balance amplifier. One feature of an embodiment resides in that each of passive parts disposed in a low-band signal negative path and each of passive parts disposed in a low-band signal positive path are placed in positions where they are symmetric with respect to a center line of a semiconductor chip. Thus, the symmetry between the low-band signal negative path and the low-band signal positive path is enhanced. As a result, a loss in matching due to the difference between the low-band signal negative path and the low-band signal positive path can be enough reduced, and the characteristic of a low-band signal balance amplifier can be enhanced.Type: ApplicationFiled: December 28, 2009Publication date: September 9, 2010Applicant: RENESAS TECHNOLOGY CORP.Inventors: Kanji HAYATA, Akira KURIYAMA, Masatoshi HASE, Hidetoshi MATSUMOTO
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Patent number: 7756494Abstract: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.Type: GrantFiled: June 18, 2007Date of Patent: July 13, 2010Assignee: Renesas Technology Corp.Inventors: Toru Fujioka, Toshihiko Shimizu, Masami Ohnishi, Hidetoshi Matsumoto, Satoshi Tanaka
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Publication number: 20100062703Abstract: A duct installation structure in which an air conditioning duct for sending warm air or cold air into a vehicle interior of an automobile is attached to a vehicle interior structure member and an outlet grill is attached to an outlet opening end portion of the air conditioning duct. A grill fixing portion to which the outlet grill is to be fixed is integrally molded with a duct main body portion at the outlet opening end portion of the air conditioning duct. The outlet grill is directly fixed to the grill fixing portion. The outlet opening end portion of the air conditioning duct including, at one point near its center in a width direction, a fastening fixing portion that is fastened and fixed to the vehicle interior structure member and including, at its opposite ends in the width direction, a pair of contact portions for coming in contact with the vehicle interior structure member.Type: ApplicationFiled: January 24, 2008Publication date: March 11, 2010Applicants: Toyota Shatai Kabushiki Kaisha, INOAC CORPORATIONInventors: Hayato Kamigashima, Takahiro Mizuno, Nobuhiro Ichimura, Hidetoshi Matsumoto
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Publication number: 20090304991Abstract: A surface-modified plastic film, comprising: a surface layer composed of minute filamentous forms and/or granular forms consisting of a composition containing a resin and/or inorganic microparticles, on at least one major surface of a substrate plastic film. Preferably, the surface-modified plastic film is characterized in that the minute filamentous forms have a diameter of 100 ?m to 1 nm.Type: ApplicationFiled: September 2, 2005Publication date: December 10, 2009Applicant: Mitsubishi Chemical MKV CompanyInventors: Akihiko Tanioka, Mie Minagawa, Hidetoshi Matsumoto, Hirotaka Arai, Atsushi Obayashi, Ken Tashiro, Satoru Momohira
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Patent number: 7589588Abstract: A high-frequency power amplifier comprising: a plurality of power amplifiers arranged in parallel; an inductance element inserted in series in an input signal line of said each power amplifier; an input matching circuit for performing matching of inputs of a parallel connection which connected each series connection of said power amplifier and said inductance element in parallel; an output matching circuit for performing matching of outputs of the parallel connection; and a control unit for controlling said power amplifiers in such a manner that one of said power amplifiers is always brought to an operation condition and the remainder of said power amplifiers are brought to an operation or non-operation condition.Type: GrantFiled: May 25, 2006Date of Patent: September 15, 2009Assignee: Renesas Technology Corp.Inventors: Masami Ohnishi, Tomonori Tanoue, Hidetoshi Matsumoto
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Patent number: 7547929Abstract: The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.Type: GrantFiled: October 12, 2005Date of Patent: June 16, 2009Assignee: Renesas Technology Corp.Inventors: Kenichi Tanaka, Hidetoshi Matsumoto, Isao Ohbu, Kazuhiro Mochizuki, Tomonori Tanoue, Chisaki Takubo, Hiroyuki Uchiyama
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Patent number: 7515879Abstract: An RF circuit module, in which a power amplifier and a transceiver are united, with reduced interference between its electronic circuit blocks, downsized and still having high performance, and with a stable performance not dependent on the ground land structure on the motherboard, is provided. The ground plane 110 for at least a last-stage amplifier 11 of the power amplifier 10 where the greatest power is generated in the whole RF circuit block, that is, the source of generating the greatest noise and heat for the RF circuit block, is isolated from the ground plane for at least one circuit portion of the transceiver 9 including an LNA 51, receiver 52, transmitter 30, and VCO 70. These ground planes are connected to a common ground plane 480 through different connection conductors, respectively.Type: GrantFiled: December 17, 2004Date of Patent: April 7, 2009Assignee: Renesas Technology Corp.Inventors: Hiroshi Okabe, Hidetoshi Matsumoto
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Publication number: 20090042503Abstract: An air-conditioning duct for vehicles with one duct mutually connected and fixed to other duct, wherein one duct is formed by incorporating a first unit duct with a flange formed around an opening periphery thereof and a second unit duct with a flange formed around an opening periphery thereof in parallel, other duct is formed by incorporating a third unit duct with a flange formed around an opening periphery thereof and a fourth unit duct with a flange formed around an opening periphery thereof in parallel, the flange formed on the a boundary side of the first unit duct and the flange formed on the boundary side of the second unit duct are fixed with one over another, and the flange formed on the boundary side of the third unit duct and the flange formed on the boundary side of the fourth unit duct are fixed with one over another.Type: ApplicationFiled: July 30, 2008Publication date: February 12, 2009Inventors: Naoto Tani, Hidetoshi Matsumoto, Hayato Kamigashima, Nobuhiro Ichimura
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Patent number: 7408405Abstract: For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.Type: GrantFiled: July 18, 2005Date of Patent: August 5, 2008Assignee: Renesas Technology Corp.Inventors: Masami Ohnishi, Tomonori Tanoue, Hidetoshi Matsumoto
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Publication number: 20080125061Abstract: A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.Type: ApplicationFiled: November 15, 2007Publication date: May 29, 2008Inventors: Akira Kuriyama, Hidetoshi Matsumoto
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Patent number: 7368988Abstract: In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.Type: GrantFiled: July 20, 2006Date of Patent: May 6, 2008Assignee: Renesas Technology Corp.Inventors: Hidetoshi Matsumoto, Tomonori Tanoue, Isao Ohbu
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Patent number: 7368996Abstract: Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q1, Q2 is provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp1, Cp2, Lp1, and Ct1, Ct2, Lt1, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.Type: GrantFiled: August 24, 2005Date of Patent: May 6, 2008Assignee: Renesas Technology Corp.Inventors: Tomonori Tanoue, Masami Ohnishi, Hidetoshi Matsumoto, Akira Kuriyama
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Publication number: 20070298736Abstract: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.Type: ApplicationFiled: June 18, 2007Publication date: December 27, 2007Inventors: Toru FUJIOKA, Toshihiko Shimizu, Masami Ohnishi, Hidetoshi Matsumoto, Satoshi Tanaka
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Publication number: 20070295994Abstract: A hetero-junction bipolar transistor is provided including emitter contact region, an emitter region made of a first semiconductor material, a base region made of a second semiconductor material having a smaller energy band gap than the first semiconductor material, a collector region made of the first semiconductor material, and a collector contact area, the regions being serially formed on a surface of a substrate in a direction parallel to the surface thereof. A buffer layer made of a third semiconductor material with an energy band gap larger than the first semiconductor material is provided between the emitter region, the base region, the collector region and the substrate surface. Emitter, base and collector electrodes are also provided, in contact with the emitter contact region, the base region, and the collector region, respectively.Type: ApplicationFiled: March 14, 2007Publication date: December 27, 2007Inventors: Kazuhiro Mochizuki, Hidetoshi Matsumoto, Shinichiro Takatani