Abstract: An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where n is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.

Abstract: An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where a is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.

Abstract: The present technology relates to a solid-state imaging device, a driving method, and an electronic device capable of suppressing leakage of charge from PD to FD. In a solid-state imaging device according to an aspect of the present technology, in a case where the charge is read out from a selected photoelectric conversion unit as a charge readout target out of the plurality of photoelectric conversion units sharing the shared holding unit to the shared holding unit, a drive control unit applies a first pulse to the readout unit that corresponds to the selected photoelectric conversion unit, and applies a second pulse having a polarity opposite to a polarity of the first pulse and having a pulse period overlapping with at least a portion of the pulse period of the first pulse, to a site coming into a capacitive coupling state with the shared holding unit. The present technology is applicable to a back-illumination CMOS image sensor, for example.

Abstract: A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.

Abstract: A pixel array includes pixel cells disposed in semiconductor material. Each of the pixel cells includes photodiodes, and a floating diffusion to receive image charge from the photodiodes. A source follower is coupled to the floating diffusion to generate an image signal in response image charge from the photodiodes. Drain regions of first and second row select transistors are coupled to a source of the source follower. A common junction is disposed in the semiconductor material between gates of the first and second row select transistors such that the drains of the first and second row select transistors are shared and coupled together through the semiconductor material of the common junction. The pixel cells are organized into a rows and columns with bitlines.

Abstract: The present disclosure includes a video transmission apparatus, a video reception apparatus, an image transmission apparatus, an image reception apparatus, and a system. The image transmission apparatus includes a detection circuitry, a generation circuitry, and a transmission circuitry. The generation circuitry is configured to generate a first image based on a first piece of positional information from a plurality of pieces of positional information, the first image including the overlap region and corresponding to a first region of interest of two or more regions of interest. The generation circuitry is also configured to generate one or more second images based on an overlap region and the plurality of pieces of positional information, the one or more second images excluding the overlap region and corresponding to regions of interest other than the first region of interest of the two or more regions of interest.

Abstract: The present disclosure includes a video transmission apparatus, a video reception apparatus, an image transmission apparatus, an image reception apparatus, and a system. The image transmission apparatus includes a detection circuitry, a generation circuitry, and a transmission circuitry. The generation circuitry is configured to generate a first image based on a first piece of positional information from a plurality of pieces of positional information, the first image including the overlap region and corresponding to a first region of interest of two or more regions of interest. The generation circuitry is also configured to generate one or more second images based on an overlap region and the plurality of pieces of positional information, the one or more second images excluding the overlap region and corresponding to regions of interest other than the first region of interest of the two or more regions of interest.

Abstract: Disclosed herein is a solid-state imaging element including a pixel unit configured to include a plurality of pixels arranged in a matrix and a pixel signal readout unit configured to include an analog-digital conversion unit that carries out analog-digital conversion of a pixel signal read out from the pixel unit. Each one of the pixels in the pixel unit includes a plurality of divided pixels arising from division into regions different from each other in optical sensitivity or a charge accumulation amount. The pixel signal readout unit reads out divided-pixel signals of the divided pixels in the pixel. The analog-digital conversion unit carries out analog-digital conversion of the divided-pixel signals that are read out and adds the divided-pixel signals to each other to obtain a pixel signal of one pixel.

Abstract: A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.

Abstract: A pixel array includes pixel cells disposed in semiconductor material. Each of the pixel cells includes photodiodes, and a floating diffusion to receive image charge from the photodiodes. A source follower is coupled to the floating diffusion to generate an image signal in response image charge from the photodiodes. Drain regions of first and second row select transistors are coupled to a source of the source follower. A common junction is disposed in the semiconductor material between gates of the first and second row select transistors such that the drains of the first and second row select transistors are shared and coupled together through the semiconductor material of the common junction. The pixel cells are organized into a rows and columns with bitlines.

Abstract: Disclosed herein is a solid-state imaging element including a pixel unit configured to include a plurality of pixels arranged in a matrix and a pixel signal readout unit configured to include an analog-digital conversion unit that carries out analog-digital conversion of a pixel signal read out from the pixel unit. Each one of the pixels in the pixel unit includes a plurality of divided pixels arising from division into regions different from each other in optical sensitivity or a charge accumulation amount. The pixel signal readout unit reads out divided-pixel signals of the divided pixels in the pixel. The analog-digital conversion unit carries out analog-digital conversion of the divided-pixel signals that are read out and adds the divided-pixel signals to each other to obtain a pixel signal of one pixel.

Abstract: The present disclosure includes a video transmission apparatus, a video reception apparatus, an image transmission apparatus, an image reception apparatus, and a system. The image transmission apparatus includes a detection circuitry, a generation circuitry, and a transmission circuitry. The generation circuitry is configured to generate a first image based on a first piece of positional information from a plurality of pieces of positional information, the first image including the overlap region and corresponding to a first region of interest of two or more regions of interest. The generation circuitry is also configured to generate one or more second images based on an overlap region and the plurality of pieces of positional information, the one or more second images excluding the overlap region and corresponding to regions of interest other than the first region of interest of the two or more regions of interest.

Abstract: Disclosed herein is a solid-state imaging element including a pixel unit configured to include a plurality of pixels arranged in a matrix and a pixel signal readout unit configured to include an analog-digital conversion unit that carries out analog-digital conversion of a pixel signal read out from the pixel unit. Each one of the pixels in the pixel unit includes a plurality of divided pixels arising from division into regions different from each other in optical sensitivity or a charge accumulation amount. The pixel signal readout unit reads out divided-pixel signals of the divided pixels in the pixel. The analog-digital conversion unit carries out analog-digital conversion of the divided-pixel signals that are read out and adds the divided-pixel signals to each other to obtain a pixel signal of one pixel.

Abstract: A solid-state image pickup device including a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.

Abstract: The present technology relates to a solid-state imaging device, a driving method, and an electronic apparatus capable of obtaining a high-quality image more easily. The solid-state imaging device includes a pixel array region in which a plurality of pixels that photoelectrically converts incident light is provided. A first pixel group and a second pixel group having different output characteristics are provided in the pixel array region, and the second pixel group is arranged in a position displaced from the first pixel group in a horizontal direction and in a vertical direction by half a pixel. By arranging the first pixel group and the second pixel group in this manner, deterioration in resolution of an image obtained by photographing may be minimized, and a high-quality image may be obtained more easily. The present technology is applicable to the solid-state imaging device.

Abstract: Disclosed herein is a solid-state imaging element including a pixel unit configured to include a plurality of pixels arranged in a matrix and a pixel signal readout unit configured to include an analog-digital conversion unit that carries out analog-digital conversion of a pixel signal read out from the pixel unit. Each one of the pixels in the pixel unit includes a plurality of divided pixels arising from division into regions different from each other in optical sensitivity or a charge accumulation amount. The pixel signal readout unit reads out divided-pixel signals of the divided pixels in the pixel. The analog-digital conversion unit carries out analog-digital conversion of the divided-pixel signals that are read out and adds the divided-pixel signals to each other to obtain a pixel signal of one pixel.

Abstract: A solid-state image pickup device including a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.

Abstract: Disclosed herein is a solid-state imaging element including a pixel unit configured to include a plurality of pixels arranged in a matrix and a pixel signal readout unit configured to include an analog-digital conversion unit that carries out analog-digital conversion of a pixel signal read out from the pixel unit. Each one of the pixels in the pixel unit includes a plurality of divided pixels arising from division into regions different from each other in optical sensitivity or a charge accumulation amount. The pixel signal readout unit reads out divided-pixel signals of the divided pixels in the pixel. The analog-digital conversion unit carries out analog-digital conversion of the divided-pixel signals that are read out and adds the divided-pixel signals to each other to obtain a pixel signal of one pixel.

Abstract: A solid-state image pickup device including a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.

Abstract: A solid-state image pickup device including a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.