Abstract: A semiconductor image pickup device includes a pixel array having pixels arranged in a matrix. Each pixel includes a photodiode that converts an optical signal into an electrical signal, and a transistor connected to a charge accumulation section of the photodiode. A buffer is additionally provided. This buffer controls the transistor of the pixels using a lower control power supply voltage than a power supply voltage of the pixel array.

Abstract: To check circuit characteristics of a function circuit block such as a gain circuit, data indicating an initial set point is set in a data set unit in a data set unit setting time period T1, and a plurality of electric signals obtained by converting optical signals input to pixel cells to pickup an image are accumulated in a pixel array in an accumulating time period T2. Thereafter, in a data outputting time period T3, a plurality of set points different from each other are set in an automatic set point changing block according to the data set in the data set unit, the electric signals are repeatedly corrected in the gain circuit at a gain while changing the gain corresponding to each of the set points, and the corrected electric signals corresponding to the set points are output to the outside of a semiconductor image pickup device. Thereafter, in a calculating and judging time period T4, the calculation for the corrected electric signals is performed, and characteristics of the gain circuit are checked.

Abstract: The semiconductor image pickup device comprises a pixel array having a plurality of pixels arranged in a matrix form. Each pixel comprises a photodiode that converts an optical signal into an electric signal, and a transistor connected to a charge accumulation section of the photodiode 3mn. A buffer is additionally provided. This buffer controls the transistor of the pixels using a lower control power supply voltage than a power supply voltage of the pixel array.