Abstract: A solid-state image sensor with one or more control lines driven at arbitrary dividing points along the control line.

Abstract: A solid-state image pickup device including a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.

Abstract: A solid-state image pickup device includes a first unit to convert light into an electrical signal and a second unit to convert light into an electrical signal. The first unit includes a first lens and a first pair of light receiving elements to receive light from the first lens. The second unit includes a second lens and a second pair of light receiving elements to receive light from the second lens. A profile of the second pair of light receiving elements is different in plan view than a profile of the first pair of light receiving elements.

Abstract: A solid-state image pickup device including a pixel section arranged with multiple pixel circuits in matrix having functions for converting an optical signal to an electrical signal and for accumulating the electrical signal depending on an exposure time, and a pixel driving section capable of driving through a control line to reset, accumulate, transfer, and output signal electric charge of the pixel section. The pixel section may have a pixel shared structure arranged with one selection control line, one reset control line, and multiple transfer control lines, including a readout-pixel section and an unread-pixel section in its entirety. The pixel driving section includes a pixel control section where an unread-pixel is normally fixed in a reset state. When reading a readout-pixel in a shared relationship, if its address is selected or a selection signal becomes active, the unread-pixel reset-state is cancelled to turn into an unread state.

Abstract: A solid-state image pickup device including a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.

Abstract: An integrating A/D converter includes: a comparator comparing an input voltage to a reference voltage having a ramp waveform, a voltage value of which linearly varies with time; a higher-order bit counter starting operation or stopping operation triggered by inversion of an output signal of the comparator and outputting higher order bits by performing counting in a cycle of a clock signal; and a time-to-digital converter latching phase information of the clock signal corresponding to plural signals obtained by delaying an output signal of the comparator and decoding the latched values to output lower order bits having higher resolution than the clock cycle.

Abstract: A solid-state image pickup device includes a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.

Abstract: A solid-state image sensor with one or more control lines driven at arbitrary dividing points along the control line.

Abstract: Disclosed is a method of acquiring physical information that acquires physical information by using a semiconductor device. The semiconductor device includes unit elements, each of which has a detecting unit and a unit signal generating unit. The method includes the steps of: providing an operation current supply unit supplying an operation current such that the unit signal generating unit outputs a unit signal, and a signal processing unit receiving the unit signal output from each of the unit elements forming the semiconductor device and outputting an output unit signal; and when a selective read mode is designated for reading the unit signal from a portion of the respective unit elements, an operation current of the output signal line of the unit signal generating unit not to be read is reduced so as to be smaller than an operation current of the output signal line of the unit signal generating unit to be read.

Abstract: A solid-state image sensor with one or more control lines driven at arbitrary dividing points along the control line.

Abstract: A solid-state image pickup device includes a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.

Abstract: A solid-state image pickup device including a pixel section arranged with multiple pixel circuits in A matrix having functions for converting an optical signal to an electrical signal and for accumulating the electrical signal depending on an exposure time, and a pixel driving section capable of driving through a control line to reset, accumulate, transfer, and output signal electric charge of the pixel section. The pixel section may have a pixel shared structure arranged with one selection control line, one reset control line, and multiple transfer control lines, including a readout-pixel section and an unread-pixel section in its entirety. The pixel driving section includes a pixel control section where an unread-pixel is normally fixed in a reset state. When reading a readout-pixel in a shared relationship, if its address is selected or a selection signal becomes active, the unread-pixel reset-state is cancelled to turn into an unread state.

Abstract: A solid-state image pickup device includes a lens, a first light receiving element, a second light receiving element, and an element separation area. The first light receiving element is configured to receive light from the lens. The second light receiving element is configured to receive light from the lens. The element separation area is between the first light receiving element and the second light receiving element. The lens has an optical axis, which is offset from a center of the element separation area.

Abstract: A solid-state image pickup device including a pixel section arranged with multiple pixel circuits in matrix having functions for converting an optical signal to an electrical signal and for accumulating the electrical signal depending on an exposure time, and a pixel driving section capable of driving through a control line to reset, accumulate, transfer, and output signal electric charge of the pixel section. The pixel section may have a pixel shared structure arranged with one selection control line, one reset control line, and multiple transfer control lines, including a readout-pixel section and an unread-pixel section in its entirety. The pixel driving section includes a pixel control section where an unread-pixel is normally fixed in a reset state. When reading a readout-pixel in a shared relationship, if its address is selected or a selection signal becomes active, the unread-pixel reset-state is cancelled to turn into an unread state.

Abstract: An A/D converter switches resolution of m bits to resolution of n bits smaller than the m bits at a predetermined time.

Abstract: An image pickup element includes a light-receiving portion having a matrix arrangement formed by disposing first-direction arrays, each having photoelectric conversion portions arranged in a first direction with a predetermined gap maintained therebetween, in a second direction orthogonal to the first direction, and micro-lenses provided above the light-receiving portion. A certain first-direction array in the matrix arrangement is provided with a pair of photoelectric conversion portions that optically receive, via a pair of micro-lenses, photographic-subject light beams passing through a pair of segmental regions in an exit pupil of a photographic optical system, the pair of segmental regions being disposed biasedly in opposite directions from each other in the first direction. The pair of micro-lenses is disposed such that light axes thereof extend through vicinities of edges of the pair of photoelectric conversion portions, the edges being the farthest edges from each other in the first direction.

Abstract: To reduce random noise caused by address setting in an apparatus that controls a read address of an image sensing device, without causing a significant increase in circuit complexity. A ring shift register sets a low-order address value depending on a value in steps of which an overall address value is incremented, and a Gray code counter sets a high-order address value. In the ring shift register, a carry from the lowest-order bit to the highest-order bit does not occur, and thus use of the ring shift register makes it possible to reduce the maximum number of toggled bits. The Gray code counter does not need to include a complicated circuit for switching the value in steps of which to increment the high-order address value.

Abstract: Provided is a solid-state image pickup device including a pixel section arranged with multiple pixel circuits in matrix having functions for converting an optical signal to an electrical signal and for accumulating the electrical signal depending on an exposure time, and a pixel driving section capable of driving through a control line to reset, accumulate, transfer, and output signal electric charge of the pixel section. The pixel section may have a pixel shared structure arranged with one selection control line, one reset control line, and multiple transfer control lines, including a readout-pixel section and an unread-pixel section in its entirety. The pixel driving section includes a pixel control section where an unread-pixel is normally fixed in a reset state. When reading a readout-pixel in a shared relationship, if its address is selected or a selection signal becomes active, the unread-pixel reset-state is cancelled to turn into an unread state.

Abstract: Disclosed is a method of acquiring physical information that acquires physical information by using a semiconductor device. The semiconductor device includes unit elements, each of which has a detecting unit and a unit signal generating unit. The method includes the steps of: providing an operation current supply unit supplying an operation current such that the unit signal generating unit outputs a unit signal, and a signal processing unit receiving the unit signal output from each of the unit elements forming the semiconductor device and outputting an output unit signal; and when a selective read mode is designated for reading the unit signal from a portion of the respective unit elements, an operation current of the output signal line of the unit signal generating unit not to be read is reduced so as to be smaller than an operation current of the output signal line of the unit signal generating unit to be read.

Abstract: Disclosed is a method of acquiring physical information that acquires physical information by using a semiconductor device. The semiconductor device includes unit elements, each of which has a detecting unit and a unit signal generating unit. The method includes the steps of: providing an operation current supply unit supplying an operation current such that the unit signal generating unit outputs a unit signal, and a signal processing unit receiving the unit signal output from each of the unit elements forming the semiconductor device and outputting an output unit signal; and when a selective read mode is designated for reading the unit signal from a portion of the respective unit elements, an operation current of the output signal line of the unit signal generating unit not to be read is reduced so as to be smaller than an operation current of the output signal line of the unit signal generating unit to be read.