Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: The present invention aims to provide a viscosity index improver composition and a lubricating oil composition having a low HTHS viscosity at 100° C., an excellent shear stability, and an excellent low temperature viscosity.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array; a first insulating layer; and a passivation film. The memory cell array includes first interconnect layers and a first memory pillar. The first interconnect layers extend in a first direction substantially parallel to a semiconductor substrate. The first memory pillar passes through the first interconnect layers and extends in a second direction substantially perpendicular to the semiconductor substrate. The first insulating layer is provided above the memory cell array. The passivation film is provided on the first insulating layer, and includes a protrusion at least above the memory cell array and between the passivation film and the first insulating layer.

Abstract: The present invention provides a positive-electrode active material for a lithium-ion secondary cell or a sodium-ion secondary cell, which can effectively exhibit more excellent charge/discharge characteristics; and a method for manufacturing the positive-electrode active material. Namely, the present invention relates to a positive-electrode active material for a secondary cell comprising an oxide represented by formula (A): LiFeaMnbMcPO4, formula (B): LiFeaMnbMcSiO4, or formula (C): NaFegMnhQiPO4; and carbon derived from a cellulose nanofiber supported thereon.

Abstract: There is included (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature; and (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: A probe card (10) includes a flexible substrate (114) and a rigid substrate (120). The flexible substrate (114) contacts an inspection object. The rigid substrate (120) is electrically connected to the flexible substrate (114). The flexible substrate (114) is located on a side of the rigid substrate (120) where the inspection object is located in a direction perpendicular to the rigid substrate (120).

Abstract: A positive electrode active substance for a secondary cell, where the positive electrode active substance is capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The positive electrode active substance contains 0.3 to 5 mass % of graphite, 0.1 to 4 mass % of carbon obtained by carbonizing a water-soluble carbon material, or 0.1 to 5 mass % of a metal fluoride is supported on a composite containing a compound which contains at least iron or manganese, where the compound is represented by formula (A) LiFeaMnbMcPO4, formula (B) Li2FedMneNfSiO4, or formula (C) NaFegMnhQiPO4, and carbon obtained by carbonizing a cellulose nanofiber.

Abstract: An object detection system includes distance measurement sensors and a hardware processor functioning as a wave transmission control circuit and a determination circuit. The distance measurement sensors provided at different positions in a vehicle. The wave transmission control circuit sets one of the distance measurement sensors as a top of a wave transmission order. A detection range of the one of the distance measurement sensors covers a region where an object is located. The object has been detected through preliminary detection when power supply to the vehicle is started. The wave transmission control circuit then repeats a cyclic wave transmission control on the distance measurement sensors to emit ultrasonic waves sequentially in the wave transmission order. The determination circuit determines an object as a detection target object when any one of the distance measurement sensors has detected the object a predetermined number of times.

Abstract: An object detection device includes first and second detectors each configured to detect an object by transmitting an ultrasonic wave in a moving direction of the moving object and receiving a reflected wave of the ultrasonic wave, a second detector, a memory, and a hardware processor coupled to the memory, and configured to: determine that an obstacle is present in the moving direction of the moving object, based on object detection results by the first and second detectors; determine crossing of the obstacle based on object detection results by the first and second detectors in a state in which it is being determined that the obstacle is present; and cause a driving controller mounted on the moving object, to release driving restriction control of restricting movement of the moving object when determining the crossing, or prohibit the driving controller from releasing the driving restriction control under a predetermined condition.

Abstract: The present invention aims to provide a viscosity index improver composition and a lubricating oil composition having a low HTHS viscosity at 100° C., an excellent shear stability, and an excellent low temperature viscosity.

Abstract: An object detection device according to the present disclosure, installed in a vehicle, includes a plurality of ranging sensors and each including a transmitter configured to transmit ultrasonic waves and a receiver configured to receive reflected waves of the ultrasonic waves transmitted by the transmitter and reflected by an object around the vehicle, and processing circuitry configured to detect the object around the vehicle based on the reflected waves received by the receiver during a wave receiving period until a predetermined period of time elapses from transmission of the ultrasonic waves by the transmitter. The processing circuitry is configured to acquire an imaged image imaged by an in-vehicle camera that images surroundings of the vehicle. The processing circuitry is configured to determine whether a specific object is contained based on the imaged image.

Abstract: A distance measurement device includes: a transmission and reception device configured to transmit a transmission wave and receive a reflected wave; a memory; and a hardware processor coupled to the memory. The hardware processor is configured to: detect a reception signal received by the transmission and reception device and obtain a reception waveform indicating a temporal change in an intensity of the reception signal; detect a feature amount of the reflected wave based on the reception waveform; calculate a distance from the distance measurement device to an object, based on the feature amount; and control a detection condition of detection of the feature amount by changing a threshold for detecting the feature amount, based on a change in the feature amount, in a case where the reflected wave arrives during a reverberation period in which reverberation of the transmission wave remains in the transmission and reception device.

Abstract: An object detection apparatus includes distance measuring devices and a hardware processor. The distance measuring devices are provided in a vehicle and emit ultrasonic waves. The distance measuring devices detect an object around the vehicle and obtain distance information indicating a distance to the detected object. The hardware processor determines a scene in which the vehicle is placed. The determination is performed on the basis of the distance information, vehicle speed information, an image of surroundings of the vehicle, and/or a location of the vehicle on a map. The hardware processor performs, on the basis of a scene determination result, setting of a high-sensitivity area where sensitivity for detecting the reflected waves is temporarily increased, a change of an emission interval of the ultrasonic waves, and/or a change of an emission sequence of the ultrasonic waves.

Abstract: An object identification apparatus includes: an identifier that identifies whether an object is a control target based on a result of comparison between reflection intensity of a detection wave and an identification threshold when the detection wave is received by the moving body; and a changer that changes identification sensitivity of the identifier according to positions of at least two points of the object when the detection wave is reflected at the at least two points and received by the moving body.

Abstract: There is provided a technique that includes forming a film in a concave portion provided on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor to the substrate; (b) supplying a nitrogen-containing reactant to the substrate; and (c) supplying an oxygen-containing reactant to the substrate, wherein in (c), an oxide layer is formed by oxidizing a layer, which has been formed in the concave portion before (c) is performed, and an amount of oxidation of the oxide layer formed in an upper portion in the concave portion is made larger than an amount of oxidation of the oxide layer formed in a lower portion in the concave portion.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body disposed in a first tier, the stacked body including a plurality of conductive layers stacked via an insulating layer; a first pillar that extends in the stacked body in a stacking direction of the stacked body; a first upper structure disposed in a second tier upper than the first tier; and a misalignment mark for inspecting misalignment between the first tier and the second tier, wherein the misalignment mark includes a second pillar that extends the first tier of the misalignment inspection region in the stacking direction, and a second upper structure disposed in the second tier of the misalignment inspection region and superposed on the second pillar in a top view.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array; a first insulating layer; and a passivation film. The memory cell array includes first interconnect layers and a first memory pillar. The first interconnect layers extend in a first direction substantially parallel to a semiconductor substrate. The first memory pillar passes through the first interconnect layers and extends in a second direction substantially perpendicular to the semiconductor substrate. The first insulating layer is provided above the memory cell array. The passivation film is provided on the first insulating layer, and includes a protrusion at least above the memory cell array and between the passivation film and the first insulating layer.