Abstract: According to one embodiment, a semiconductor memory device includes a stacked body disposed in a first tier, the stacked body including a plurality of conductive layers stacked via an insulating layer; a first pillar that extends in the stacked body in a stacking direction of the stacked body; a first upper structure disposed in a second tier upper than the first tier; and a misalignment mark for inspecting misalignment between the first tier and the second tier, wherein the misalignment mark includes a second pillar that extends the first tier of the misalignment inspection region in the stacking direction, and a second upper structure disposed in the second tier of the misalignment inspection region and superposed on the second pillar in a top view.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array; a first insulating layer; and a passivation film. The memory cell array includes first interconnect layers and a first memory pillar. The first interconnect layers extend in a first direction substantially parallel to a semiconductor substrate. The first memory pillar passes through the first interconnect layers and extends in a second direction substantially perpendicular to the semiconductor substrate. The first insulating layer is provided above the memory cell array. The passivation film is provided on the first insulating layer, and includes a protrusion at least above the memory cell array and between the passivation film and the first insulating layer.

Abstract: A vehicle including a vehicle control device is disclosed. The vehicle control device determines whether an object is a preceding vehicle and whether a brake light of the preceding vehicle is on or off. When the object is a preceding vehicle and its brake light is on, the vehicle control device transmits a braking request that instructs a braking control device to stop the vehicle at a position at which an inter-vehicle distance between the preceding vehicle and the vehicle is equal to or larger than a first distance. When the object is a preceding vehicle and its brake light is off, the vehicle control device transmits a braking request that instructs the braking control device to stop the vehicle at a position at which the inter-vehicle distance is equal to or larger than a second distance being smaller than the first distance.

Abstract: There is included (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature; and (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array; a first insulating layer; and a passivation film. The memory cell array includes first interconnect layers and a first memory pillar. The first interconnect layers extend in a first direction substantially parallel to a semiconductor substrate. The first memory pillar passes through the first interconnect layers and extends in a second direction substantially perpendicular to the semiconductor substrate. The first insulating layer is provided above the memory cell array. The passivation film is provided on the first insulating layer, and includes a protrusion at least above the memory cell array and between the passivation film and the first insulating layer.

Abstract: A correction amount setting apparatus sets a correction amount for a sound wave sensor that is mounted on a vehicle and that detects an obstacle by transmitting and receiving a sound wave, the correction amount being a correction amount of a sensitivity to a reflection wave or a threshold for determining whether an obstacle is present. The correction amount setting apparatus includes: a correction amount calculator that acquires temperature information from a temperature sensor that detects an outside air temperature around the vehicle and, based on the temperature information, determines the correction amount; and a correction amount setter that determines and sets the correction amount for the sound wave sensor when the vehicle, from start of traveling, after having been accelerated to a speed higher than a reference speed, is decelerated to the reference speed.

Abstract: A communication device includes a master station, a ring-type transmission line whose start point and end point are connected to the master station, and a plurality of slave stations connected to the ring-type transmission line in parallel. The master station transmits a signal and feeds electric power from both of the start point and the end point of the ring-type transmission line. Each of the slave stations includes an impedance variable element connected to the ring-type transmission line in parallel, and values are set to the impedance variable elements in accordance with the connection positions of the slave stations.

Abstract: The present invention provides a positive electrode active substance for a secondary cell, the positive electrode active substance capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The present invention also provides a method for producing the positive electrode active substance for a secondary cell. That is, the present invention is a positive electrode active substance for a secondary cell, in which one or two selected from the group consisting of a water-insoluble electrically conductive carbon material and carbon obtained by carbonizing a water-soluble carbon material, and 0.1 to 5 mass % of a metal fluoride are supported on a compound containing at least iron or manganese, the compound represented by formula (A) LiFeaMnbM1cPO4, formula (B) Li2FedMneM2fSiO4, or formula (C) NaFegMnhQiPO4.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body disposed in a first tier, the stacked body including a plurality of conductive layers stacked via an insulating layer; a first pillar that extends in the stacked body in a stacking direction of the stacked body; a first upper structure disposed in a second tier upper than the first tier; and a misalignment mark for inspecting misalignment between the first tier and the second tier, wherein the misalignment mark includes a second pillar that extends the first tier of the misalignment inspection region in the stacking direction, and a second upper structure disposed in the second tier of the misalignment inspection region and superposed on the second pillar in a top view.

Abstract: There is provided a technique that includes: (a) forming a first film including a cyclic structure composed of silicon and carbon and also including nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor including the cyclic structure and also including halogen to the substrate having the recess formed on its surface; and supplying a nitriding agent to the substrate; (b) converting the first film into a second film including the cyclic structure and also including oxygen by supplying a first oxidizing agent to the substrate; and (c) converting the second film into a third film including silicon and oxygen and not including carbon and nitrogen by supplying a second oxidizing agent to the substrate.

Abstract: The present invention is to provide an electron or hydride ion intake/release material comprising a lanthanoid oxyhydride represented by the formula Ln(HO) (in the formula, Ln represents a lanthanoid element) or an electron or hydride ion intake/release composition comprising at least one kind of lanthanoid oxyhydride; a transition metal-supported material wherein a transition metal is supported by the above electron or hydride ion intake/release material or electron or hydride ion intake/release composition; and a catalyst comprising the transition metal-supported material. The electron or hydride ion intake/release material or electron or hydride ion intake/release composition according to the present invention has a higher ability for intake/release of electron or hydride ion than that of a conventional hydride-containing compound, and can be used effectively as a catalyst such as a catalyst having excellent ammonia synthesis activity by supporting a transition metal thereon.

Abstract: A load drive system for driving a load supplied with power from a power line includes a control unit which controls switching between the power line and the load and a communication unit which communicates using voltage and current of the power line. When performing the switching, the control unit controls, based on a width of a transition period of the power-line current, the transition period being attributable to the switching, timing of the switching so as to move the transition period away from a center of a period corresponding to a symbol communicated by the communication unit.

Abstract: There is provided a positive electrode active material composite for a lithium-ion secondary battery, in which, when using as a positive electrode active material of the lithium-ion secondary battery, it can effectively improve high-temperature cycle characteristics. In the positive electrode active material composite for a lithium-ion secondary battery, only on the surface of a lithium transition metal oxide secondary particle (A) composed of one or more of the lithium transition metal oxide particles represented by the following formula (I): LiNiaCobMncM1xO2 . . . (I) or the following formula (II): LiNidCOeAlfM2yO2 . . . (II), a lithium-based polyanion particles (B) is composited with lithium transition metal oxide particles under a specific condition, the lithium-based polyanion particles (B) being represented by the following formula (III) or (III)?: LigMnhFeiM3zPO4 . . . (III) or Mnh?Fei?M3z?PO4 . . . (III)? and being supporting carbon (C) on a surface thereof.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array; a first insulating layer; and a passivation film. The memory cell array includes first interconnect layers and a first memory pillar. The first interconnect layers extend in a first direction substantially parallel to a semiconductor substrate. The first memory pillar passes through the first interconnect layers and extends in a second direction substantially perpendicular to the semiconductor substrate. The first insulating layer is provided above the memory cell array. The passivation film is provided on the first insulating layer, and includes a protrusion at least above the memory cell array and between the passivation film and the first insulating layer.

Abstract: There is provided a technique that includes forming a first film including a ring-shaped structure composed of silicon and carbon and containing nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, and performing post-treatment by supplying an oxidizing agent to the substrate under a condition that the ring-shaped structure included in the first film is preserved. The cycle includes non-simultaneously performing supplying a precursor including the ring-shaped structure and containing halogen to the substrate with the recess formed in the surface, and supplying a nitriding agent to the substrate, wherein the cycle is performed under a condition that the ring-shaped structure included in the precursor is preserved.

Abstract: Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.

Abstract: A correct commutation is realized even if a communication error occurs due to a change in an actuator drive current. An electronic control unit that includes a communication section outputting a control signal and that can transmit the control signal to an actuator connected to the electronic control unit via a power line, includes an actuator operation detection section. When the actuator operation detection section detects an actuator operation, the communication section retransmits the control signal at timing of detecting the actuator operation.

Abstract: A communication device includes a master station, a ring-type transmission line whose start point and end point are connected to the master station, and a plurality of slave stations connected to the ring-type transmission line in parallel. The master station transmits a signal and feeds electric power from both of the start point and the end point of the ring-type transmission line. Each of the slave stations includes an impedance variable element connected to the ring-type transmission line in parallel, and values are set to the impedance variable elements in accordance with the connection positions of the slave stations.