Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: There is provided a positive electrode active material composite for a lithium-ion secondary battery, in which, when using as a positive electrode active material of the lithium-ion secondary battery, it can effectively improve high-temperature cycle characteristics. In the positive electrode active material composite for a lithium-ion secondary battery, only on the surface of a lithium transition metal oxide secondary particle (A) composed of one or more of the lithium transition metal oxide particles represented by the following formula (I): LiNiaCobMncM1xO2 . . . (I) or the following formula (II): LiNidCOeAlfM2yO2 . . . (II), a lithium-based polyanion particles (B) is composited with lithium transition metal oxide particles under a specific condition, the lithium-based polyanion particles (B) being represented by the following formula (III) or (III)?: LigMnhFeiM3zPO4 . . . (III) or Mnh?Fei?M3z?PO4 . . . (III)? and being supporting carbon (C) on a surface thereof.

Abstract: The present invention provides a positive electrode active substance for a secondary cell, the positive electrode active substance capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The present invention also provides a method for producing the positive electrode active substance for a secondary cell. That is, the present invention is a positive electrode active substance for a secondary cell, in which a water-insoluble electrically conductive carbon material and carbon obtained by carbonizing a water-soluble carbon material are supported on a compound containing at least iron or manganese, the compound represented by formula (A) LiFeaMnbMnbM1cPO4, formula (B) Li2FedMneM2fSiO4, or formula (C) NaFegMnhQiPO4.

Abstract: There is provided a technique that includes: (a) forming a first film including a cyclic structure composed of silicon and carbon and also including nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor including the cyclic structure and also including halogen to the substrate having the recess formed on its surface; and supplying a nitriding agent to the substrate; (b) converting the first film into a second film including the cyclic structure and also including oxygen by supplying a first oxidizing agent to the substrate; and (c) converting the second film into a third film including silicon and oxygen and not including carbon and nitrogen by supplying a second oxidizing agent to the substrate.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: A correct commutation is realized even if a communication error occurs due to a change in an actuator drive current. An electronic control unit that includes a communication section outputting a control signal and that can transmit the control signal to an actuator connected to the electronic control unit via a power line, includes an actuator operation detection section. When the actuator operation detection section detects an actuator operation, the communication section retransmits the control signal at timing of detecting the actuator operation.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: A load drive system for driving a load supplied with power from a power line includes a control unit which controls switching between the power line and the load and a communication unit which communicates using voltage and current of the power line. When performing the switching, the control unit controls, based on a width of a transition period of the power-line current, the transition period being attributable to the switching, timing of the switching so as to move the transition period away from a center of a period corresponding to a symbol communicated by the communication unit.

Abstract: A power line communication apparatus includes a drive block including an actuator control circuit and a drive circuit and a communication block. The actuator control circuit generates a control pulse for controlling an actuator, and controls a transition timing of the control pulse during an operation period set within a communication cycle by a communication clock. The drive circuit controls a driving current of the actuator supplied from a DC power source through a power line based on the control pulse in which the transition timing is controlled. The communication block generates the communication clock, and modulates a current flowing through the power line in response to data to be transmitted during a signal transmission period different from the operation period, set within the communication cycle.

Abstract: The present invention provides a positive-electrode active material for a lithium-ion secondary cell or a sodium-ion secondary cell, which can effectively exhibit more excellent charge/discharge characteristics; and a method for manufacturing the positive-electrode active material. Namely, the present invention relates to a positive-electrode active material for a secondary cell comprising an oxide represented by formula (A): LiFeaMnbMcPO4, formula (B): LiFeaMnbMcSiO4, or formula (C): NaFegMnhQiPO4; and carbon derived from a cellulose nanofiber supported thereon.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: The present invention provides a positive-electrode active material for a lithium-ion secondary cell, which can effectively exhibit more excellent charge/discharge characteristics; and a method for manufacturing the positive-electrode active material. Namely, the present invention relates to a positive-electrode active material for a secondary cell comprising an oxide represented by formula (A): LifeaMnbMcPO4; and carbon derived from a cellulose nanofiber supported thereon.

Abstract: There is provided a technique that includes forming a first film including a ring-shaped structure composed of silicon and carbon and containing nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, and performing post-treatment by supplying an oxidizing agent to the substrate under a condition that the ring-shaped structure included in the first film is preserved. The cycle includes non-simultaneously performing supplying a precursor including the ring-shaped structure and containing halogen to the substrate with the recess formed in the surface, and supplying a nitriding agent to the substrate, wherein the cycle is performed under a condition that the ring-shaped structure included in the precursor is preserved.

Abstract: A power line communication apparatus includes a drive block including an actuator control circuit and a drive circuit and a communication block. The actuator control circuit generates a control pulse for controlling an actuator, and controls a transition timing of the control pulse during an operation period set within a communication cycle by a communication clock. The drive circuit controls a driving current of the actuator supplied from a DC power source through a power line based on the control pulse in which the transition timing is controlled. The communication block generates the communication clock, and modulates a current flowing through the power line in response to data to be transmitted during a signal transmission period different from the operation period, set within the communication cycle.

Abstract: A method of manufacturing a semiconductor device includes: providing a substrate that includes a surface exposing a first film containing silicon, oxygen, carbon and nitrogen and having an oxygen atom concentration higher than a silicon atom concentration, which is higher than a carbon atom concentration, which is equal to or higher than a nitrogen atom concentration; and changing a composition of a surface of the first film so that the nitrogen atom concentration becomes higher than the carbon atom concentration on the surface of the first film, by supplying a plasma-excited nitrogen-containing gas to the surface of the first film.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, columnar portions, and first and second interconnection portions. The stacked body includes insulating layers and electrode layers alternately stacked one layer by one layer on the substrate. The columnar portions are provided between the first and second interconnection portions and include a first row having a first columnar portion and a second row having a second columnar portion, the first columnar portion being positioned closest to the first interconnection portion, and the second columnar portion being positioned closest to the second interconnection portion. A distance between the first interconnection portion and the first columnar portion is smaller than a distance between the second interconnection portion and the second columnar portion, and the distance between the second interconnection portion and the second columnar portion is greater than 20 nanometers.

Abstract: A semiconductor memory device includes a plurality of first electrode layers stacked in a first direction; a semiconductor layer extending in the first direction in the plurality of first electrode layers; a first insulating layer extending in the first direction along the semiconductor layer between the semiconductor layer and each of the plurality of first electrode layers; a second insulating layer covering the periphery of the plurality of first electrode layers; a resistive body provided on the second insulating layer; and a third insulating layer provided between the resistive body and the second insulating layer, the third insulating layer including the same material as the material of the first insulating layer.