Abstract: A composite material for brazing having features of: forming a homogenous distribution of components in the brazing filler material even after brazing; having an excellent workability; offering low manufacturing costs; and having satisfactory corrosion resistivity as desired. The composite material for brazing has a lamination of a brazing filler material layer thereon, wherein the brazing filler material layer is a layer of alloy that includes copper, aluminum, and nickel.

Abstract: To provide an inexpensive lead component which can be easily connected to a semiconductor chip and which has satisfactory connectability. There is provided a lead component including a base material having a connection part for connecting to a semiconductor chip, comprising: a solder part having a Zn layer made of a Zn-bonding material rolled and clad-bonded on the base material, and an Al layer made of an Al-bonding material rolled and clad-bonded on the Zn layer, in a prescribed region including the connection part on the base material; and the solder part further comprising a metal thin film composed of one kind or two kinds or more of Au, Ag, Cu, Ni, Pd, and Pt covering a surface of the Al layer.

Abstract: A solar cell lead includes a strip plate conductive material that a surface thereof is coated with solder plating. The coated solder plating includes a concavo-convex portion on a surface thereof and a 0.2% proof stress of not more than 90 MPa by a tensile test. The coated solder plating includes a hot-dip solder plating layer formed by supplying a molten solder on the surface of the strip plate conductive material. A plating temperature is set to be not higher than a liquidus-line temperature of the used solder plus 120° C., and an oxide film on a surface of the hot-dip solder plating layer is set to be not more than 7 nm in thickness.

Abstract: Provided are a soft dilute-copper alloy wire and soft dilute-copper alloy twisted wire which have high electrical conductivity and high bending life and can limit disconnection during use compared with oxygen-free copper wire, and also provided are an insulated wire, coaxial cable, and composite cable using the soft dilute-copper alloy wire and soft dilute-copper alloy twisted wire. The soft dilute-copper alloy wire is subjected to annealing treatment by elongation processing of soft dilute-copper alloy material comprising copper and an additive element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Hf, Fe, Mn and Cr, with inevitable impurities as the balance, wherein the soft dilute-copper alloy wire has an average grain size that is 20 ?m or less in a surface layer having a depth of 50 ?m from the surface, and an elongation value that is at least 1% higher than the average elongation value of oxygen-free copper wire that has been subjected to the aforementioned annealing treatment.

Abstract: An electric wire with a terminal includes a conductor, and the terminal is connected to an end portion of the conductor. The terminal includes a first connecting portion connected to an electrical equipment and a second connecting portion connected to the conductor. The second connecting portion includes a first connection surface and a second connection surface opposite to the first connection surface. The conductor includes a first conductor and a second conductor that are connected to the first connection surface and the second connection surface, respectively, by ultrasonic bonding. The connecting portion of the first connection surface overlaps the connecting portion of the second connection surface in a perpendicular direction to an axial direction of the conductor.

Abstract: A copper-based material includes a base comprising copper and a surface treatment layer disposed on a surface of the base, the surface treatment layer including an amorphous layer containing a metal element that has a greater affinity for oxygen than for copper, oxygen, and, optionally, copper diffused from the base.

Abstract: The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (101), Al-based metallic layers (102a, 102b) on both sides thereof, and X-based metallic layers (103a, 103b) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (102a, 102b), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.

Abstract: A vibration-damping composite material includes a clad material that includes a base material includes a zinc-aluminum alloy and metal layers each including a ferritic stainless steel on both surfaces of the base material. A total thickness of the metal layers is not less than 40% and not more than 80% of the thickness of the clad material.

Abstract: A method of manufacturing a soft-dilute-copper-alloy material includes a plastic working of a soft-dilute-copper-alloy including an additional element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn and Cr, and a balance consisting of copper and inevitable impurity, and a subsequent annealing treatment of the soft-dilute-copper-alloy. A working ratio in the plastic working before the annealing treatment is not less than 50%.

Abstract: A soft dilute copper alloy wire is composed of a soft dilute copper alloy material containing an additive element selected from the group consisting of Ti, Mg, Zr, Nb, Cu, V, Ni, Mn, and Cr, and balance comprising Cu. An average size of crystal grains lying from a surface of the soft dilute copper alloy wire at least to a depth of 20% of a wire diameter is not greater than 20 ?m.

Abstract: Provided are a soft dilute copper alloy material, a soft dilute copper alloy wire, a soft dilute copper alloy sheet, a soft dilute copper alloy stranded wire, and a cable, a coaxial cable and a composite cable using same. The disclosed soft-3dilute-copper-alloy material contains: copper; at least one additional element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn, and Cr; and inevitable impurities as the remainder. The soft dilute copper alloy material is characterized in that the average grain size is at most 20 ?m in the surface layer up to a depth of 50 ?m from the surface.

Abstract: To provide an inexpensive lead component which can be easily connected to a semiconductor chip and which has satisfactory connectability. There is provided a lead component including a base material having a connection part for connecting to a semiconductor chip, comprising: a solder part having a Zn layer made of a Zn-bonding material rolled and clad-bonded on the base material, and an Al layer made of an Al-bonding material rolled and clad-bonded on the Zn layer, in a prescribed region including the connection part on the base material; and the solder part further comprising a metal thin film composed of one kind or two kinds or more of Au, Ag, Cu, Ni, Pd, and Pt covering a surface of the Al layer.

Abstract: The present invention provides a flexible flat cable having high conductivity and high bending durability, and a method for manufacturing the same. The present invention is a flexible flat cable comprising conductors and insulating films applied over the conductors, wherein the conductor is comprised of at least one additive element selected from the group consisting of magnesium (Mg), zirconium (Zr), niobium (Nb), calcium (Ca), vanadium (V), nickel (Ni), manganese (Mn), titanium (Ti), and chromium (Cr); 2 mass-% or more of oxygen; and the balance being inevitable impurity and copper, wherein the conductor has such a recrystallized texture that the size of crystal grains in the inner area of the conductor is large and that of in the surface area thereof is smaller than that of the inner area, wherein both sides of the conductor are sandwiched between insulating films.

Abstract: A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material.

Abstract: A dilute copper alloy material used in an environment with presence of hydrogen includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Ca, V, Fe, Al, Si, Ni, Mn, Ti and Cr, the additive element being capable of forming an oxide in combination with the oxygen. A method of manufacturing a dilute copper alloy member excellent in characteristics of resistance to hydrogen embrittlement includes melting the dilute copper alloy material by SCR continuous casting and rolling at a copper melting temperature of not less than 1100° C. and not more than 1320° C. to make molten metal, forming a cast bar from the molten metal, and forming the dilute copper alloy member by hot-rolling the cast bar.

Abstract: A superfine copper alloy wire has a copper-silver alloy wherein the superfine copper alloy wire has a final wire diameter of 0.05 mm or less, and the copper-silver alloy has a copper-silver eutectic crystal phase whose volume ratio to a whole volume of the superfine copper alloy wire is 3% or more and 20% or less.

Abstract: An extra-fine copper alloy twisted wire including a plurality of copper alloy wires with a wire diameter of 0.010 to 0.025 mm twisted together, each of the copper alloy wires including 1 to 3 weight % of silver (Ag) and a balance consisting of a copper and an inevitable impurity, the copper alloy twisted wire further including a tensile strength of not less than 850 MPa, and an electrical conductivity of not less than 85% IACS. The extra-fine copper alloy twisted wire includes a solid insulation with a thickness of not more than 0.07 mm formed on an outer circumference of the extra-fine insulated wire.

Abstract: Disclosed is a lead wire for a solar cell having excellent bondability with a solar cell. The solar cell lead wire (10) has a band plate-shaped electroconductive material (12) that is formed with straight-angled cross-sectional shape and is covered by a molten solder plating layer (13), with the thickness of the oxide film on the surface of the molten solder plating layer (13) being 7 nm or less.

Abstract: An electric wire with a terminal including a conductor, and the terminal connected to an end portion of the conductor. The terminal includes a first connecting portion connected to an electrical equipment and a second connecting portion connected to the conductor. The second connecting portion includes a first connection surface and a second connection surface opposite to the first connection surface. The conductor includes a first conductor and a second conductor that are connected to the first connection surface and the second connection surface, respectively, by ultrasonic bonding. A total cross-sectional area of the first conductor and the second conductor is not less than 20 mm2.

Abstract: A solar cell lead includes a strip plate conductive material that a surface thereof is coated with solder plating. The coated solder plating includes a concavo-convex portion on a surface thereof and a 0.2% proof stress of not more than 90 MPa by a tensile test. The coated solder plating includes a hot-dip solder plating layer formed by supplying a molten solder on the surface of the strip plate conductive material. A plating temperature is set to be not higher than a liquidus-line temperature of the used solder plus 120° C., and an oxide film on a surface of the hot-dip solder plating layer is set to be not more than 7 nm in thickness.