Patents by Inventor Hiroshi Tomita
Hiroshi Tomita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200284714Abstract: According to one embodiment, a particle measuring method is disclosed. The method includes irradiating a detection liquid with light. The detection liquid contains methyl salicylate. The method further includes converting scattered light from the detection liquid into an electric signal by using photoelectric conversion after irradiating the detection liquid with the light. The method further includes performing a particle measurement on the detection liquid by using the electric signal.Type: ApplicationFiled: March 3, 2020Publication date: September 10, 2020Applicants: Kioxia Corporation, RION Co., Ltd.Inventors: Hiroshi TOMITA, Hidekazu HAYASHI, Eishi SHIOBARA, Kaoru KONDO, Takuya TABUCHI, Kazuna BANDO, Sota KONDO
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Patent number: 10607763Abstract: A reactor includes a coil body, an exterior case, and a filler. The coil body includes a core and a coil wound around the core. The exterior case includes a metal structure and a resin frame. The metal structure has a bottom surface and a side wall provided to stand upright from the bottom surface. The bottom surface and the side wall of the metal structure are unitarily formed with each other. The frame is disposed at an opposite side to the bottom surface of the metal structure. The exterior case houses the core and the coil. The filler is filled between the exterior case and the coil body.Type: GrantFiled: May 17, 2016Date of Patent: March 31, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Nobuya Matsutani, Toshiyuki Asahi, Junichi Kotani, Hiroshi Tomita, Hidenori Uematsu
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Patent number: 10586694Abstract: According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.Type: GrantFiled: August 19, 2016Date of Patent: March 10, 2020Assignee: Toshiba Memory CorporationInventors: Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Patent number: 10573508Abstract: In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.Type: GrantFiled: August 26, 2015Date of Patent: February 25, 2020Assignee: Toshiba Memory CorporationInventors: Tatsuhiko Koide, Shinsuke Kimura, Yoshihiro Ogawa, Hisashi Okuchi, Hiroshi Tomita
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Patent number: 10529588Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: GrantFiled: June 20, 2018Date of Patent: January 7, 2020Assignee: Toshiba Memory CorporationInventors: Yuya Akeboshi, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Publication number: 20190394439Abstract: Provided is a head-mounted video presentation device which has a visible light wavelength conversion and is designed for a user having degraded sensitivity to a first wavelength band as a part of a visible light wavelength band as compared with a second wavelength band as the remaining part of the visible light wavelength band.Type: ApplicationFiled: December 20, 2017Publication date: December 26, 2019Inventors: Hiroshi Tomita, Eriko Sugano, Tsuyoshi Fujii
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Publication number: 20190366963Abstract: A sensor protector configured including a mount, a plate shaped cover, and an electromagnetic wave shield is provided. The mount is mounted at a bracket configured to fix a sensor, provided at an inner side of a bumper cover, to a body of a vehicle. The plate shaped cover that extends from a lower portion of the mount toward the bumper cover with an end portion of the cover, at an outer side in a vehicle front-rear direction ,separated from the bumper cover, and covers a lower portion of the sensor as viewed from a lower side of the vehicle. The electromagnetic wave shield is provided to at least a portion of the cover.Type: ApplicationFiled: May 7, 2019Publication date: December 5, 2019Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takuto KUMASHIRO, Kenji Furumoto, Hiroshi Tomita
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Publication number: 20190262869Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.Type: ApplicationFiled: May 7, 2019Publication date: August 29, 2019Inventors: Yu Ishii, Hiroyuki Kawasaki, Kenichi Nagaoka, Kenya Ito, Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Publication number: 20190262870Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.Type: ApplicationFiled: May 7, 2019Publication date: August 29, 2019Inventors: Yu Ishii, Hiroyuki Kawasaki, Kenichi Nagaoka, Kenya Ito, Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Patent number: 10328465Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.Type: GrantFiled: February 20, 2013Date of Patent: June 25, 2019Assignee: EBARA CORPORATIONInventors: Yu Ishii, Hiroyuki Kawasaki, Kenichi Nagaoka, Kenya Ito, Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Patent number: 10249034Abstract: A method of adjusting a sensitivity parameter value for substrate defect inspection used in a substrate defect inspection apparatus compares, for each pixel value of a selected virtual inspection substrate, using reference pixel data to be used after adjustment, the deviation amount from an allowable range corresponding to the position thereof and the sensitivity parameter value before the adjustment when each pixel value is deviated from the allowable range, and updates the deviation amount as a new sensitivity parameter value when the deviation amount exceeds the sensitivity parameter value and a difference between the deviation amount and the sensitivity parameter value is equal to or less than a threshold value.Type: GrantFiled: June 27, 2017Date of Patent: April 2, 2019Assignee: Tokyo Electron LimitedInventors: Yasuhiro Kitada, Izumi Hasegawa, Hiroshi Tomita, Kousuke Nakayama, Tadashi Nishiyama
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Patent number: 10199240Abstract: A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.Type: GrantFiled: May 29, 2012Date of Patent: February 5, 2019Assignees: Toshiba Memory Corporation, Tokyo Electron LimitedInventors: Hidekazu Hayashi, Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Kazuyuki Mitsuoka, Mitsuaki Iwashita, Takehiko Orii, Gen You, Hiroki Ohno, Takayuki Toshima
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Patent number: 10155246Abstract: A method for adjusting a chemical liquid supply device of supplying a chemical liquid through a nozzle for removing a coating film on a peripheral portion of a substrate having the coating film formed on a surface thereof and horizontally held by a holding table is provided. The method includes discharging the chemical liquid from the nozzle, performing, by an image pickup part, continuous image pickup on a region including a leading end of the nozzle and a region in which the chemical liquid discharged from the leading end forms a liquid stream in the air, acquiring area change data representing a temporal change in area of the chemical liquid in an image pickup region based on an image pickup result obtained by the image pickup part, and adjusting a supply control device installed in a chemical liquid supply path connected to the nozzle based on the area change data.Type: GrantFiled: March 9, 2016Date of Patent: December 18, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroshi Tomita, Shinichi Mizushino
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Publication number: 20180301349Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: ApplicationFiled: June 20, 2018Publication date: October 18, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Yuya AKEBOSHI, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Patent number: 10096462Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container.Type: GrantFiled: July 15, 2013Date of Patent: October 9, 2018Assignees: Toshiba Memory Corporation, Tokyo Electron LimitedInventors: Hidekazu Hayashi, Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii, Takayuki Toshima
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Patent number: 10014186Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: GrantFiled: January 6, 2016Date of Patent: July 3, 2018Assignee: Toshiba Memory CorporationInventors: Yuya Akeboshi, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Publication number: 20180174733Abstract: A reactor includes a coil body, an exterior case, and a filler. The coil body includes a core and a coil wound around the core. The exterior case includes a metal structure and a resin frame. The metal structure has a bottom surface and a side wall provided to stand upright from the bottom surface. The bottom surface and the side wall of the metal structure are unitarily formed with each other. The frame is disposed at an opposite side to the bottom surface of the metal structure. The exterior case houses the core and the coil. The filler is filled between the exterior case and the coil body.Type: ApplicationFiled: May 17, 2016Publication date: June 21, 2018Inventors: NOBUYA MATSUTANI, TOSHIYUKI ASAHI, JUNICHI KOTANI, HIROSHI TOMITA, HIDENORI UEMATSU
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Patent number: 9991111Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.Type: GrantFiled: November 30, 2017Date of Patent: June 5, 2018Assignee: Toshiba Memory CorporationInventors: Yoshihiro Ogawa, Tatsuhiko Koide, Shinsuke Kimura, Hisashi Okuchi, Hiroshi Tomita
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Publication number: 20180082832Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.Type: ApplicationFiled: November 30, 2017Publication date: March 22, 2018Applicant: Toshiba Memory CorporationInventors: Yoshihiro Ogawa, Tatsuhiko Koide, Shinsuke Kimura, Hisashi Okuchi, Hiroshi Tomita
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Patent number: D843076Type: GrantFiled: March 1, 2017Date of Patent: March 12, 2019Assignee: KABUSHIKI-KAISHA TOMITAHAMONOInventor: Hiroshi Tomita