Abstract: Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Abstract: Provided are a temperature sensor that performs high-speed sensing, whose cost is low, and whose layout is freely designed, the temperature sensor eliminating the need for complicated operations, and a method for manufacturing the temperature sensor. In a temperature sensor 1, terminal portions 9 of a connector portion 7 are exposed to an outside of a pipe section 2, a connector-side embedded portion 8 of the connector portion 7 is embedded in an embedding portion 4 of a side wall portion 3, an exposed portion 12 of a housing portion 11 is disposed in the pipe section 2, and an embedded base 13 of the housing portion 11 is embedded in the embedding portion 4. The housing portion 11 is made of a metal.

Abstract: Information related to a vehicle can be displayed by projecting an image based on the information on a road surface or the like. An image projection apparatus that projects an image includes: an acquisition unit that acquires information to be displayed; and an image projection unit that projects the image based on the information to be displayed acquired by the acquisition unit.

Abstract: Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

Abstract: Multiplexers are disclosed. A multiplexer can include a first filter and a second filter that are coupled to a common node. The second filter can include a first type of acoustic wave resonators (e.g., bulk acoustic wave resonators) and a series acoustic wave resonator of a second type (e.g., a surface acoustic wave resonator) that is coupled between the acoustic wave resonators of the first type and the common node. The first filter can provide a single-ended radio frequency signal. In certain embodiments, the first filter can be a receive filter and the second filter can be a transmit filter.

Abstract: A liquid discharge apparatus includes a liquid discharge head configured to discharge liquid. The liquid discharge apparatus includes a reservoir configured to store liquid to be supplied to the liquid discharge head. The reservoir is provided at a position lower than the liquid discharge head. The liquid discharge apparatus includes a supply flow path configured to communicate with the liquid discharge head and the reservoir. The supply flow path is provided with a joint detachable from the liquid discharge head. The liquid discharge apparatus includes a retainer configured to retain the joint detached from the liquid discharge head. The joint has a coupler to be coupled to the liquid discharge head. The retainer is configured to retain the joint with the coupler facing up.

Abstract: A liquid ejecting apparatus includes a transport unit that transports a medium along a transport path, a liquid ejecting head that performs recording on the transported medium by ejecting liquid from a nozzle formed at a nozzle surface, a mounting portion on which a liquid storage portion for storing the liquid supplied to the liquid ejecting head is mounted, and a first discharge port that delivers the medium on which the recording is performed toward a media processing apparatus that performs processing on the medium, in which the mounting portion is disposed at a position higher than the nozzle surface, and a first transport path which is a portion of the transport path from a position corresponding to the liquid ejecting head to the first discharge port passes above the mounting portion.

Abstract: A liquid ejecting apparatus includes a transport unit that transports a medium along a transport path, a liquid ejecting head that performs recording on the transported medium by ejecting liquid from a nozzle formed at a nozzle surface, a mounting portion on which a liquid storage portion for storing the liquid supplied to the liquid ejecting head is mounted, and a first discharge port that delivers the medium on which the recording is performed toward a media processing apparatus that performs processing on the medium, in which the mounting portion is disposed at a position higher than the nozzle surface, and a first transport path which is a portion of the transport path from a position corresponding to the liquid ejecting head to the first discharge port passes above the mounting portion.

Abstract: Based on information about a vehicle, the information can be projected and displayed onto a road surface or the like. An image projection apparatus, which projects an image, includes an acquisition unit that acquires the information about the vehicle, and an image projection unit that projects the image based on the information acquired by the acquisition unit.

Abstract: A method of manufacturing a packaged surface acoustic wave filter chip is disclosed. The method can include providing a structure having first interdigital transducer electrodes formed with a first piezoelectric layer, second interdigital transducer electrodes formed with a second piezoelectric layer, and a substrate between the first and second piezoelectric layers. The method can include forming a plurality of through electrodes extending at least partially through a thickness of the structure such that a first set of through electrodes of the plurality of through electrodes are electrically connected to the first interdigital transducer electrodes and a second set of through electrodes of the plurality of through electrodes are electrically isolated from the first interdigital transducer electrodes.

Abstract: A high-performance and flexible loudspeaker apparatus usable in various scenes. A first unit includes a loudspeaker therein, a second unit is connected to a lower portion of the first unit, the first unit comprises the loudspeaker provided in a housing of the first unit so as to output a sound toward an upper portion of the housing and a passive radiator provided on a rear surface side of the loudspeaker in the housing, and an output port of the passive radiator is opposed to an inclined surface which is provided at an upper portion of the second unit and whose distance from the output port of the passive radiator increases toward a radially outer side of the housing.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes high velocity layers on opposing sides of a piezoelectric layer. A low velocity layer can be positioned between the piezoelectric layer and one of the high velocity layers, in which the low velocity layer has a lower acoustic velocity than the high velocity layers. The acoustic wave device can be configured to generate a boundary acoustic wave such that acoustic energy is concentrated at a boundary of the piezoelectric layer and the low velocity layer.

Abstract: A surface acoustic wave filter is disclosed. The surface acoustic wave filter includes a substrate, and first and second surface acoustic wave filter structures disposed on first and second main surfaces of the substrate, respectively. The first surface acoustic wave filter structure includes a first piezoelectric layer a plurality of first surface acoustic wave resonators formed on a top surface of the first piezoelectric layer, and a first wiring layer connecting the first surface acoustic wave resonators to each other. The second surface acoustic wave filter structure includes a second piezoelectric layer, a plurality of second surface acoustic wave resonators formed on a bottom surface of the second piezoelectric layer, and a second wiring layer connecting the second surface acoustic wave resonators to each other. A plurality of through electrodes extends through the substrate, the first piezoelectric layer, and the second piezoelectric layer.

Abstract: A liquid ejection apparatus includes a liquid ejection head that is detachably attached and ejects a liquid, and a control section that is configured to transmit a delivery request for a new liquid ejection head to a server apparatus via a network.

Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with raised and recessed frame portions formed in a top electrode. The FBAR can include a substrate, a piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.

Abstract: A piezoelectric microelectromechanical systems device can include a cavity bounded by walls and an asymmetrical bimorph structure at least partially spanning the cavity that includes at least a piezoelectric layer and two electrode layers. The electrode layers can have relative thicknesses configured to compensate for expected temperature stress in the bimorph structure. Thus, metals having different thicknesses can be positioned and configured to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate. A method for making the piezoelectric microelectromechanical systems device is also provided.

Abstract: According to the present disclosure, a method of manufacturing a semiconductor device includes the steps of (a) preparing a lead frame including a switching element die pad, a control element die pad, and a third-side side rail portion, (b) mounting a switching element and a diode element on the switching element die pad and mounting a control element configured to control the switching element on the control element die pad, (c) sealing the switching element, the diode element, and the control element with a mold resin such that the power side terminal, the control side terminal, and a part of the third-side side rail portion protrude outward, and (d) forming a third-side side rail terminal by cutting the third-side side rail portion, the third-side side rail terminal extending from a part of the third-side side rail portion.

Abstract: A Lamb wave filter is provided which has improved out of band rejection, the filter including a substrate having a center region and two edge regions, a first set of electrodes arranged as a first interdigital transducer displaced on one of the two edge regions and configured to receive an input signal, a second set of electrodes arranged as a second interdigital transducer displaced on the other of the two edge regions and configured to provide a filtered output signal, and a third set of electrodes disposed parallel to the first and second sets of electrodes on the center region of the substrate.

Abstract: A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT arranged therein, and a withstand-voltage retention region surrounding the first region and the second regions in plan view are defined. The semiconductor substrate has a first main surface and a second main surface. The semiconductor substrate includes an anode layer having a first conductivity type, which is arranged in the first main surface of the first region, and a diffusion layer having the first conductivity type, which is arranged in the first main surface of the withstand-voltage retention region adjacently to the anode layer. A first trench is arranged in the first main surface on a side of the anode layer with respect to a boundary between the anode layer and the diffusion layer.

Abstract: A piezoelectric microelectromechanical system microphone comprises a support substrate, a membrane including a piezoelectric material attached to the support substrate and configured to deform and generate an electrical potential responsive to impingement of sound waves on the membrane, and a compliant anchor including a trench defined in the support substrate about a portion of a perimeter of the membrane to increase sensitivity of the piezoelectric microelectromechanical system microphone.