Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with recessed and raised frame portions in the piezoelectric film. The FBAR can include a substrate, the piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed in the film to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.

Abstract: A piezoelectric microelectromechanical systems device is provided, having a first piezoelectric layer, a first metal layer including a first metal, a second metal layer including a second metal, the first and second metals having different properties to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate including at least one wall defining a cavity and the at least one wall supporting the layers. The method for making the piezoelectric microelectromechanical systems device is also provided.

Abstract: A system for compensating for thermal stress in piezoelectric microelectromechanical systems devices can have a piezoelectric layer at least partially spanning a cavity such that it generates electrical signals when external forces cause the piezoelectric layer to vibrate with respect to the cavity. At least one electrode layer can include a conductive metal positioned adjacent the piezoelectric layer and configured as an electrode to accept the electrical signals. The piezoelectric layer and electrode layer can have an expected thermal stress tending to cause expected deflection even when external forces are not causing the piezoelectric layer to vibrate. A compensation layer can be positioned adjacent at least one of the piezoelectric layer and the at least one electrode layer and configured to counteract the expected deflection from the expected thermal stress.

Abstract: Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Abstract: A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT arranged therein, and a withstand-voltage retention region surrounding the first region and the second regions in plan view are defined. The semiconductor substrate has a first main surface and a second main surface. The semiconductor substrate includes an anode layer having a first conductivity type, which is arranged in the first main surface of the first region, and a diffusion layer having the first conductivity type, which is arranged in the first main surface of the withstand-voltage retention region adjacently to the anode layer. A first trench is arranged in the first main surface on a side of the anode layer with respect to a boundary between the anode layer and the diffusion layer.

Abstract: In a wireless information collecting method executed by at least one user terminal device that measures wireless information used in a site survey and a server device that stores the wireless information and performs the site survey, the user terminal device performs a step of periodically measuring a current position and transmitting positioning information indicating the current position to the server device, and a step of measuring the wireless information in accordance with a wireless information measurement number instructed by the server device and transmitting wireless information including a position and time to the server device.

Abstract: An acoustic wave resonator comprises a carrier substrate, a layer of dielectric material disposed on an upper surface of the carrier substrate, and a layer of piezoelectric material disposed above the layer of dielectric material. The layer of piezoelectric material includes a pair of opposing terminating edges that are coterminous with the layer of dielectric material. One or more interdigital transducers (IDTs) are disposed on the layer of piezoelectric material. The opposing terminating edges sandwich the one or more interdigital transducers, and in some examples, a pair of reflector gratings disposed on the layer of piezoelectric material and each including less than eight reflector fingers. The opposing terminating edges provide edge reflections that allow a reduction in size or a complete removal of the reflector gratings, resulting in a smaller acoustic wave resonator compared to conventional devices while maintaining a comparable performance.

Abstract: A semiconductor apparatus includes: a semiconductor substrate; a diffusion layer; a first depletion prevention region; a channel stopper electrode, a monitor electrode and an insulating film. The inner edge portion of the monitor electrode is positioned between the diffusion layer and the first depletion prevention region. A distance between the outer edge portion of the channel stopper electrode and the inner edge portion of the monitor electrode is a first distance. A distance between the diffusion layer and the first depletion prevention region is a second distance. The first and second distances are set so that a discharge voltage between the channel stopper electrode and the monitor electrode becomes greater than an avalanche breakdown voltage at a PN junction portion of the diffusion layer and the semiconductor substrate.

Abstract: A liquid ejection apparatus includes a liquid ejection head that is detachably attached and ejects a liquid, and a control section that is configured to transmit a delivery request for a new liquid ejection head to a server apparatus via a network.

Abstract: A benzoic acid salt of 4-[5-[(3S)-3-aminopyrrolidine-1-carbonyl]-2-[2-fluoro-4-(2-hydroxy-2-methyl-propyl)phenyl]phenyl]-2-fluoro-benzonitrile is provided. A sorbic acid salt of 4-[5-[(3S)-3-aminopyrrolidine-1-carbonyl]-2-[2-fluoro-4-(2-hydroxy-2-methyl-propyl)phenyl]phenyl]-2-fluoro-benzonitrile is also provided.

Abstract: A acoustic wave resonator comprises a piezoelectric substrate and a plurality of interdigital transducer (IDT) electrodes disposed on the piezoelectric substrate, the plurality of IDT electrodes formed of a mixture of tungsten and chromium to provide for reduction in size and increase in quality factor of the acoustic wave resonator.

Abstract: Provided is a semiconductor device that can detect the cracking progress with high precision. A semiconductor device is formed using a semiconductor substrate, and includes an active region in which a semiconductor element is formed, and an edge termination region outside the active region. A crack detection structure is termed in the edge termination region of the semiconductor substrate. The crack detection structure includes: a trench formed in the semiconductor substrate and extending in a circumferential direction of the edge termination region; an inner-wall insulating film formed on an inner wall of the trench; an embedded electrode formed on the inner-wall insulating film and embedded into the trench; and a monitor electrode formed on the semiconductor substrate and connected to the embedded electrode.

Abstract: A liquid ejecting apparatus includes a liquid ejecting head that ejects liquid and an attachment portion to which a liquid container that stores the liquid supplied to the liquid ejecting head is detachably attached. The attachment portion includes a liquid inlet portion that is coupled to a liquid outlet provided in the liquid container, and an urging mechanism that urges the liquid container in a direction opposite to an attaching direction in which the liquid container is attached to the attachment portion. The urging mechanism includes an elastic member that is in close contact with the liquid container attached to the attachment portion and that is provided below the liquid inlet portion in a direction of gravity.

Abstract: To appropriately execute a task by an electronic control device including a processor having a plurality of cores. An ECU 100 includes a multi-core CPU having a plurality of cores that execute a first task that has an execution time that varies depending on a processing amount every predetermined cycle and a second task that is higher in priority than the first task and is prohibited from being interrupted. The second task is set to be inexecutable simultaneously between the plurality of cores. A task allocation unit 11 generates a first plan. A diagnosis task planning unit 12 generates a second plan. Task processing units 10a and 10b execute the first task based on the first plan. A diagnosis task correction unit 13 times a delay time of the first task executed by the task processing units 10a and 10b, and postpones the second task of the second plan to the subsequent executable timing in accordance with the timed delay time.

Abstract: A semiconductor apparatus includes: a semiconductor substrate; a diffusion layer; a first depletion prevention region; a channel stopper electrode, a monitor electrode and an insulating film. The inner edge portion of the monitor electrode is positioned between the diffusion layer and the first depletion prevention region. A distance between the outer edge portion of the channel stopper electrode and the inner edge portion of the monitor electrode is a first distance. A distance between the diffusion layer and the first depletion prevention region is a second distance. The first and second distances are set so that a discharge voltage between the channel stopper electrode and the monitor electrode becomes greater than an avalanche breakdown voltage at a PN junction portion of the diffusion layer and the semiconductor substrate.

Abstract: Provided is a semiconductor device capable of suppressing increase in size of a package and adjusting an amount of negative feedback. A power module as a semiconductor device includes an IGBT which is a switching element and a free wheel diode (FWD) parallelly connected to the switching element. The IGBT has, on a surface thereof, an emitter electrode and a gate electrode of the IGBT and a conductive pattern insulated from the emitter electrode and the gate electrode. The FWD has, on a surface thereof, an anode electrode of the FWD and a conductive pattern insulated from the anode electrode.

Abstract: Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ? in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.

Abstract: An airline ticket sales system having a stock recording unit retaining a stock of flights, and a destination candidate extraction unit including: receiving an input of at least one condition from a user via an information processing terminal, information about a destination airport being excluded from the condition; acquiring, from the stock recording unit, information about outbound candidate flights and inbound candidate flights satisfying the condition; extracting, as candidate airports, a predetermined number from airports common to arrival airports of the outbound candidate flights and departure airports of the inbound candidate flights; selecting, based on a predetermined criterion, one from round-trip candidate flights composed of combinations of the outbound candidate flights and the inbound candidate flights among the departure airports of the outbound candidate flights specified by the condition and the respective candidate airports; and regarding the selected one as a to-be-sold round-trip flight.