Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Abstract: A machine tool system includes a machine tool main body for machining a workpiece supported on a table by using a tool detachably attached to a spindle, and an information processing apparatus. The machine tool main body includes a rotary tool magazine in which multiple grips each capable of holding the tool to be attached to the spindle are provided along the circumferential direction, and an image pickup device that is arranged in the tool magazine and configured to take an image of multiple members in a machining area of the machine tool main body. The information processing apparatus includes a geometric feature calculating unit configured to calculate the shapes and the arrangement state of the multiple members in the machining area, based on image data of the image taken by the image pickup device.

Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: Provided is a glass sheet (1) with a film, including a laminated film (2), which includes a plurality of films laminated together, formed on a glass sheet (3). The laminated film (2) includes: an inorganic material film (4), which contains at least a noble metal, formed on the glass sheet (3); a plated metal film (5) formed on the inorganic material film; and a metal film (6) formed on the plated metal film (5). The laminated film (2) is black when viewed from a glass sheet (3) side.

Abstract: According to some aspects, a layered structure comprises a memory layer exhibiting magnetization perpendicular to a face of the memory layer, the memory layer configured to change a direction of the magnetization in response to application of a current thereto, a magnetic layer exhibiting magnetization parallel or antiparallel to the direction of the magnetization of the memory layer and comprising a plurality of ferromagnetic layers, one or more non-magnetic layers, and an antiferromagnetic material, wherein a first non-magnetic layer of the one or more non-magnetic layers is situated between a first ferromagnetic layer of the plurality of ferromagnetic layers and a second ferromagnetic layer of the plurality of ferromagnetic layers, and wherein the antiferromagnetic material contacts at least one of the first non-magnetic layer and the first ferromagnetic layer, and an intermediate layer formed from a non-magnetic material located between the memory layer and the magnetic layer.

Abstract: A packing has a plurality of sheet materials spaced and arranged in parallel, and liquid flows along the flat surface thereof in a standing use state. Each sheet material has at least one member group including a plurality of support members arranged such that the upper end of the uppermost support member corresponds to the upper end of the sheet material and the lower end of the lowermost support member corresponds to the lower end of the sheet material. Each support member has a pair of support walls parallel to the liquid flow direction and perpendicular to the sheet material surface, and a bridging part connecting the support walls. A sandwiching structure is formed that one sheet material is held by at least one support member attached thereto and at least one support member attached to an adjacent sheet material, and it extends linearly through the plurality of sheet materials.

Abstract: Provided is a storage device, a manufacturing method therefor, and a storage apparatus that are capable of effectively suppressing variations in reversal time of spin torque reversal and stably performing high-speed operation. A storage device according to one embodiment of the present technology includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer is configured to have magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer.

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Abstract: According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.

Abstract: A glass film laminate (1) for a touch panel includes a glass film (2), a glass film (3), a glass film (4), and transparent adhesive layers (5). The glass films (2), (4) form both outermost layers. The glass film (3) has a transparent conductive layer (6) formed on each of both surfaces thereof. The glass films (2), (3), (4) each have a thickness of 200 ?m or less. The glass film laminate (1) for a touch panel itself assumes a curved state without the application of an external force, in which a curved concave surface (21) and a curved convex surface (41) are formed. The curved concave surface (21) has formed therein a compressive stress, and the curved convex surface (41) has formed therein a tensile stress.

Abstract: A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Abstract: [Object] To provide a storage device that realizes both a high information retention property and a low power consumption. [Solving Means] A storage device includes a fixed layer, a storage layer, an intermediate layer, and a heat generation layer. The fixed layer includes a first ferromagnetic layer that includes a fixed perpendicular magnetization. The storage layer includes a second ferromagnetic layer that includes a perpendicular magnetization invertible by a spin injection. The intermediate layer is formed of an insulator and is arranged between the storage layer and the fixed layer. The heat generation layer is formed of a resistance heating element and is arranged in at least one of the storage layer and the fixed layer. With this configuration, it becomes possible to provide a storage device that realizes both a high information retention property and a low power consumption.

Abstract: A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.

Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.

Abstract: A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information.

Abstract: A method, apparatus and computer program product are disclosed. The method includes detecting ambient light around an electronic device, determining whether a user is present based on the ambient light, and controlling an operation of the electronic device. The apparatus includes a component that consumes electric power, a light sensor that detects ambient light, a frequency analyzing unit that specifies a frequency component, and a control unit that determines whether a user is present and controls an operation of the component. The computer program product includes code to perform detecting ambient light around an electronic device, determining whether a user is present based on the ambient light, and controlling an operation of the electronic device.

Abstract: A storage element and storage devices containing the same, having a layered structure and being configured for storing information are disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y.