Abstract: A package comprising a substrate and an integrated device coupled to the substrate. The substrate includes at least one dielectric layer, a plurality of interconnects comprising a plurality of protruding pad interconnects, and a solder resist layer located over the at least one dielectric layer, the solder resist layer comprising a thickness that is greater than a thickness of the plurality of protruding pad interconnects. A protruding pad interconnect may include a first pad portion and a second pad portion.

Abstract: A package comprising a first integrated device comprising a first plurality of under bump metallization interconnects; a second integrated device comprising a second plurality of under bump metallization interconnects; a bridge coupled to the first integrated device and the second integrated device; an encapsulation layer at least partially encapsulating the first integrated device, the second integrated device, and the bridge; a metallization portion located over the first integrated device, the second integrated device, the bridge and the encapsulation layer, where the metallization portion includes at least one dielectric layer and a plurality of metallization interconnects; a first plurality of pillar interconnects coupled to the first plurality of under bump metallization interconnects, the first plurality of interconnects located in the encapsulation layer; and a second plurality of pillar interconnects coupled to the second plurality of under bump metallization interconnects, the second plurality of pi

Abstract: A package that includes a first redistribution portion, a second redistribution portion, a third redistribution portion, a first encapsulation layer coupled to the first redistribution portion and the third redistribution portion, a first discrete device encapsulated by the first encapsulation layer, wherein the first discrete device is located between the first redistribution portion and the third redistribution portion, a second encapsulation layer coupled to the first redistribution portion and the second redistribution portion, and a second discrete device encapsulated by the second encapsulation layer, wherein the second discrete device is located between the first redistribution portion and the second redistribution portion.

Abstract: Disclosed is an apparatus including a molded multi-die high density interconnect including: a bridge die having a first plurality of interconnects and second plurality of interconnects. The apparatus also includes a first die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the first plurality of interconnects of the bridge die. The apparatus also includes a second die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the second plurality of interconnects of the bridge die. The coupled second plurality of contacts and interconnects have a smaller height than the first plurality of contacts of the first die and second die.

Abstract: A device comprising a first substrate comprising a first plurality of pillar interconnects; a second substrate comprising a second plurality of pillar interconnects, wherein the second plurality of pillar interconnects is coupled to the first plurality of pillar interconnects through a plurality of solder interconnects; a passive component located between the first substrate and the second substrate; and an integrated device coupled to the first substrate.

Abstract: In an aspect, an apparatus includes a package. The package includes a substrate, a plurality of components located on a top surface of the substrate, a plurality of ball pads located on a bottom surface of the substrate, a plurality of balls, and a plurality of test pads located on the bottom surface of the substrate. Individual balls of the plurality of balls are attached to individual ball pads of the plurality of ball pads.

Abstract: A package comprising a substrate and an integrated device coupled to the substrate. The substrate comprises at least one dielectric layer; a plurality of interconnects comprising plurality of pad-on-pad interconnects, wherein the plurality of pad-on-pad interconnects is embedded through a first surface of the substrate. The plurality of pad-on-pad interconnects includes a first pad-on-pad interconnect comprising a first pad and a second pad coupled to the first pad. The package further comprising a solder resist layer located over the first surface of the substrate. The solder resist layer comprises a first solder resist layer portion comprising a first thickness; and a second solder resist layer portion comprising a second thickness that is less than the first thickness. The second solder resist layer portion is located between the at least one dielectric layer and the integrated device.

Abstract: Integrated circuit (IC) packages employing split, double-sided IC metallization structures to facilitate a semiconductor die module employing stacked dice, and related fabrication methods are disclosed. Multiple IC dice in the IC package are stacked and bonded together in a back-to-back, top and bottom IC die configuration in an IC die module, which can minimize the height of the IC package. The metallization structure is split between separate top and bottom metallization structures adjacent to respective top and bottom surfaces of the IC die module to facilitate die-to-die and external electrical connections to the dice. The top and bottom metallization structures can be double-sided by exposing substrate interconnects on respective inner and outer surfaces for respective die and external electrical interconnections. In other aspects, a compression bond is included between the IC dice mounted together in a back-to-back configuration to further minimize the overall height of the IC package.

Abstract: A package comprising a substrate and an integrated device coupled to the substrate. The substrate includes (i) at least one inner dielectric layer, (ii) a plurality of interconnects located in the at least one inner dielectric layer, where the plurality of interconnects includes a pad located on a bottom metal layer of the substrate, (iii) an outer dielectric layer located over the at least one dielectric layer, (iv) at least one routing interconnect coupled to the plurality of interconnects, where the at least one routing interconnect is located over the outer dielectric layer, where the at least one routing interconnect is located below the bottom metal layer of the substrate, and (v) a cover dielectric layer located over the outer dielectric layer and the at least one routing interconnect. The package includes a solder interconnect coupled to the pad located on the bottom metal layer of the substrate.

Abstract: An IC package includes a heat-generating device and an electrical device on a surface of a substrate, a mold compound disposed on the electrical device, and a thermal structure disposed on the heat-generating device, without the mold compound, to improve heat dissipation. In an example, the thermal structure includes a thermal interface material (TIM) layer and a heat sink. In the example, the TIM layer extends from the heat-generating device to a height equal to or less than the mold compound and the heat sink includes a planar exterior surface above the heat-generating device and the electrical device. In an example, a first heat sink portion of the heat sink on the heat-generating device may be a different thickness than a second heat sink portion of the heat sink on the electrical device. The thermal structure reduces a thermal resistance between the heat-generating device and the heat sink.

Abstract: A package that includes a substrate and an integrated device. The substrate includes at least one dielectric layer, a plurality of interconnects comprising a first material, and a plurality of surface interconnects coupled to the plurality of interconnects. The plurality of surface interconnects comprises a second material. A surface of the plurality of surface interconnects is planar with a surface of the substrate. The integrated device is coupled to the plurality of surface interconnects of the substrate through a plurality of pillar interconnects and a plurality of solder interconnects.

Abstract: A package comprising a substrate, a first integrated device and a second integrated device. The substrate includes at least one dielectric layer, a plurality of interconnects, a solder resist layer, and a plurality of periphery interconnects located over the solder resist layer. The first integrated device is coupled to the substrate. The second integrated device is coupled to the substrate. The second integrated device is configured to be electrically coupled to the first integrated device through the plurality of periphery interconnects.

Abstract: Disclosed are examples of integrated circuit (IC) packages. Each IC package may include a flip-chip (FC) die on a substrate, a wire bond die above the FC die, a wire bond connected to the wire bond die, and a mold on the substrate and encapsulating the FC die, the wire bond die, and the wire bond. The substrate may include least a first metallization layer includes a first substrate layer, a trace on the first substrate layer and routed within the first metallization layer to electrically couple with one or more FC interconnects of the FC die, and a bond finger pad formed on the trace. The bond finger pad may be circular. The wire bond may electrically connect to the trace such that the wire bond die is electrically coupled with the FC die through the wire bond, the bond finger pad, and the trace.

Abstract: Examples of semiconductor packages with stacked RDLs described herein may include, for example, a first RDL comprising multiple RDL layers coupled to a second RDL comprising multiple RDL layers using copper pillars and an underfill in place of a conventional substrate. The examples herein may use RDLs instead of substrates to achieve smaller design feature size (x, y dimensions reduction), thinner copper layers and less metal usage (z dimension reduction), flexibility to attach semiconductor dies and surface mount devices (SMD) on either side of the package, and less number of built-up RDL layers.

Abstract: A package comprising a substrate comprising a plurality of interconnects, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, and an interconnect device coupled to the substrate. The first integrated device, the second integrated device, the interconnect device and the substrate are configured to provide an electrical path for an electrical signal between the first integrated device and the second integrated device, that extends through at least the substrate, through the interconnect device and back through the substrate. The electrical path includes at least one interconnect that extends diagonally.

Abstract: A package comprising an integrated device and a substrate. The integrated device is coupled to the substrate. The substrate includes a core layer, at least one first dielectric layer coupled to a first surface of the core layer, and at least one second dielectric layer coupled to a second surface of the core layer. The substrate includes a match structure located in the core layer. The match structure includes at least one first match interconnect extending vertically and horizontally in the match structure. The match structure also includes at least one second match interconnect extending vertically in the match structure. The at least one first match interconnect and the at least one second match interconnect are configured for skew matching.

Abstract: Aspects disclosed herein include a device including a first antenna substrate including one or more antennas. The device also includes a metallization structure. The device also includes a first spacer disposed between the first antenna substrate and the metallization structure, configured to maintain a constant distance between the first antenna substrate and the metallization structure. The device also includes a first plurality of conductive elements, disposed within the first spacer, configured to electrically couple the first antenna substrate to the metallization structure. The device also includes where the first spacer is configured to enclose all the conductive elements, electrically coupled to the first antenna substrate, and is configured to form an air gap between the first antenna substrate and the metallization structure. The device also includes where the first plurality of conductive elements is separated by air in the air gap.

Abstract: A packaged assembly for integrated circuits having a redistribution layer (RDL) above a power management integrated circuit (PMIC) die for vertical connectivity from the PMIC die to another component of the packaged assembly (e.g., a wireless communication module) and techniques for fabrication thereof. An exemplary packaged assembly for integrated circuits includes: a first RDL; a second RDL disposed below the first RDL; a PMIC die disposed between the first RDL and the second RDL; a first passive component disposed adjacent to the PMIC die and between the first RDL and the second RDL; and a second passive component, wherein a first terminal of the second passive component is coupled to the PMIC die via the first RDL, and wherein a second terminal of the second passive component is coupled to the first passive component via the first RDL.

Abstract: An integrated circuit (IC) package is described. The IC package includes a die. The die including an active layer on a substrate and through substrate vias (TSVs) coupled to the active layer and extending through the substrate to a backside surface of the die. The IC package also includes integrated passive devices (IPDs) on the backside surface of the die and coupled to the active layer through the TSVs. The IC package further includes back-end-of-line (BEOL) layers on the active layer. The IC package also includes a metallization structure on the BEOL layers. The IC package also includes an under bump metallization layer on the metallization structure. The IC package further includes package bumps on the first under bump metallization layer.

Abstract: A device comprising a first package and a second package coupled to the first package. The first package includes a first substrate, at least one gradient interconnect structure coupled to the first substrate, and a first integrated device coupled to the first substrate. The second package includes a second substrate and a second integrated device coupled to the second substrate. The second substrate is coupled to the at least one gradient interconnect structure.