Patents by Inventor Hong Yan

Hong Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10958754
    Abstract: According to an aspect, a method comprises maintaining, by a cache control unit in a first packet data network, white and black lists of data servers in a second packet data network that are allowed or unable to use a cache server in the first packet data network, respectively; monitoring data traffic to and from data servers in the second packet data network over an interface between the first and second packet data network; comparing the candidate data servers to the data servers in the white and black lists; and in response to a candidate data server being in neither list, performing the following: causing sending a cache request to the candidate data server and in response to receiving an acknowledgement to the cache request within a pre-defined time, adding the candidate data server to the white list, otherwise adding the candidate data server to the black list.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: March 23, 2021
    Assignee: NOKIA SOLUTIONS AND NETWORKS OY
    Inventors: Chun Lu Deng, Zhe Yuan, Shao He Wu, Wu Lun Cui, Hong Yan Guo, Kui Liang Li
  • Patent number: 10895154
    Abstract: Provided is a base mechanism of a single prop capable of being unloaded at reduced pressure, including a base bottom plate and two wedge-shaped support blocks, where one of the wedge-shaped support blocks serves as a fixed wedge-shaped support block and is welded onto the base bottom plate, and the other of the wedge-shaped support blocks serves as a movable wedge-shaped support block and is connected to the fixed wedge-shaped support block by using a screw rod and a nut. The present invention can effectively unload the single prop at reduced pressure or remove the single prop in a contracted manner, is of a simple structure, is convenient to operate, has a good use effect, overcomes the technical problem that it is difficult to unload a single prop at reduced pressure in this technical feature, and is widely applicable in this technical field.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: January 19, 2021
    Assignee: China University of Mining and Technology
    Inventors: Qiang Zhang, Jixiong Zhang, Zhongya Wu, Wenyue Qi, Hong Yan, Meng Li
  • Patent number: 10883518
    Abstract: A water pump cooler for CPU wherein coolant may efficiently perform heat exchange, comprising at least: at least a heat absorbing component, at least a heat-transfer water pump, at least a heat exchange component and connecting water pipes, wherein a closed loop is formed by the heat-transfer water pump, connecting water pipes and heat exchange component. The heat-transfer water pump is disposed above the heat absorbing component to serve as a cycle power source for the coolant. The heat-transfer water pump includes at least a water pump component, which includes at least a base plate and a plurality of rotor axial impeller sections and rotor centrifugal impeller sections. The coolant is driven by the rotor axial impeller sections to flow into the rotor centrifugal impeller sections, and is then thrown at a high speed by the rotor centrifugal impeller sections to the heat exchange component for efficient heat dissipation.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: January 5, 2021
    Assignee: Dongguan Zhenpin Hardware Cooling Technology Co. Ltd
    Inventors: Bao Hua Sheng, Hong Yan Liao
  • Publication number: 20200395593
    Abstract: Methods and systems are provided for fabricating a large format lithium ion electrochemical cell that includes an anode and a cathode. In one example, the anode is prepared via loading the anode to a predetermined anode loading amount, followed by electrochemical pre-lithiation of the anode via electrically coupling an auxiliary electrode to the anode where lithium is transferred to the anode through an electrolyte solution from the auxiliary electrode. In this way, pre-lithiation of the anode may be improved, which may in turn increase a capacity of the large format lithium ion electrochemical cell.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 17, 2020
    Inventors: Xiangyang Zhu, Weidong Zhou, Jun Wang, Hong Yan, Derek C. Johnson
  • Publication number: 20200389538
    Abstract: According to an aspect, a method comprises maintaining, by a cache control unit in a first packet data network, white and black lists of data servers in a second packet data network that are allowed or unable to use a cache server in the first packet data network, respectively; monitoring data traffic to and from data servers in the second packet data network over an interface between the first and second packet data network; comparing the candidate data servers to the data servers in the white and black lists; and in response to a candidate data server being in neither list, performing the following: causing sending a cache request to the candidate data server and in response to receiving an acknowledgement to the cache request within a pre-defined time, adding the candidate data server to the white list, otherwise adding the candidate data server to the black list.
    Type: Application
    Filed: April 10, 2017
    Publication date: December 10, 2020
    Inventors: Chun Lu DENG, Zhe YUAN, Shao He WU, Wu Lun CUI, Hong Yan GUO, Kui Liang LI
  • Patent number: 10827023
    Abstract: The present disclosure describes a client-based web control system for analyzing and filtering web content received at a user device and presenting the filtered content on the user device in real-time, one or more operations and functions being efficiently achieved via this system comprise: receiving, at a user device, web content; identifying, at the user device, at least one model for classifying the web content; performing, at the user device, real-time analysis on the web content using the at least one model to classify the web content and determine a classification result; and taking an action on the web content at the user device based on the classification result. The present disclosure also describes the web control system including a cloud server, which, in conjunction with the user device, analyzes and classifies the web content.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: November 3, 2020
    Assignee: DLD TECHNOLOGIES CORPORATION
    Inventors: Hong Yan, Fengqiong Qin
  • Patent number: 10811110
    Abstract: Techniques are described for reducing an injection type of program disturb in a memory device during the pre-charge phase of a program loop. In one approach, a pre-charge voltage on the selected word line and drain side word lines is adjusted based on a risk of the injection type of program disturb. Risk factors such as temperature, WLn position, Vpgm and the selected sub-block, can be used to set the pre-charge voltage to be lower when the risk is higher. In another approach, the pre-charge voltage on the source side word lines is adjusted to reduce a channel gradient and/or the amount of time in which the injection type of program disturb occurs.
    Type: Grant
    Filed: June 16, 2020
    Date of Patent: October 20, 2020
    Assignee: SanDisk Technologies LLC
    Inventors: Hong-Yan Chen, Wei Zhao, Henry Chin
  • Patent number: 10790003
    Abstract: Techniques are described for maintaining a pre-charge voltage in a NAND string in a program operation. After a pre-charge voltage is applied to the channel of a NAND string, the word line voltages are controlled to avoid a large channel gradient which generates electron-hole pairs, where the electrons can pull down the channel boosting level on the drain side of the selected word line. In one approach, the word line voltages of a group of one or more source side word lines adjacent to the selected word line are increased directly from the level used during pre-charge to a pass voltage. The word line voltages of other source side word lines, and of drain side word lines, can be decreased and then increased to the pass voltage to provide a large voltage swing which couples up the channel.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: September 29, 2020
    Assignee: SanDisk Technologies LLC
    Inventors: Hong-Yan Chen, Wei Zhao
  • Publication number: 20200300088
    Abstract: Provided is a base mechanism of a single prop capable of being unloaded at reduced pressure, including a base bottom plate and two wedge-shaped support blocks, where one of the wedge-shaped support blocks serves as a fixed wedge-shaped support block and is welded onto the base bottom plate, and the other of the wedge-shaped support blocks serves as a movable wedge-shaped support block and is connected to the fixed wedge-shaped support block by using a screw rod and a nut. The present invention can effectively unload the single prop at reduced pressure or remove the single prop in a contracted manner, is of a simple structure, is convenient to operate, has a good use effect, overcomes the technical problem that it is difficult to unload a single prop at reduced pressure in this technical feature, and is widely applicable in this technical field.
    Type: Application
    Filed: November 2, 2017
    Publication date: September 24, 2020
    Applicant: China University of Mining and Technology
    Inventors: Qiang ZHANG, Jixiong ZHANG, Zhongya WU, Wenyue QI, Hong YAN, Meng LI
  • Patent number: 10770157
    Abstract: Techniques are described for reducing an injection type of program disturb in a memory device during the pre-charge phase of a program loop. In one approach, a pre-charge voltage on the selected word line and drain side word lines is adjusted based on a risk of the injection type of program disturb. Risk factors such as temperature, WLn position, Vpgm and the selected sub-block, can be used to set the pre-charge voltage to be lower when the risk is higher. In another approach, the pre-charge voltage on the source side word lines is adjusted to reduce a channel gradient and/or the amount of time in which the injection type of program disturb occurs.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: September 8, 2020
    Assignee: SanDisk Technologies LLC
    Inventors: Hong-Yan Chen, Wei Zhao, Henry Chin
  • Patent number: 10748627
    Abstract: Techniques for reducing neighbor word line interference (NWI) of memory cells which are formed in a two-tier stack having a lower tier and an upper tier separated by an interface. In one approach, an upward word line programming order is used for a top portion of the top tier, and a downward word line programming order is used for a bottom portion of the top tier and for the bottom tier. Additionally, for memory cells which receive NWI from both adjacent word lines, options include programming fewer bits per cell, performing multi-pass programming and/or use lower verify voltages. Options also include increasing a control gate length of the memory cells and increasing a height of a dielectric region adjacent to the memory cells.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: August 18, 2020
    Assignee: SanDisk Technologies LLC
    Inventors: Hong-Yan Chen, Yingda Dong, Zhengyi Zhang
  • Patent number: 10736881
    Abstract: The present invention relates to hydroxamate compounds which are inhibitors of histone deacetylase. More particularly, the present invention relates to benzimidazole containing compounds and methods for their preparation. These compounds may be useful as medicaments for the treatment of proliferative disorders as well as other diseases involving, relating to or associated with dysregulation of histone deacetylase (HDAC).
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: August 11, 2020
    Assignee: MEI Pharma, Inc.
    Inventors: DiZhong Chen, Hong Yan Song, Eric T. Sun, Niefang Yu, Yong Zou
  • Patent number: 10724051
    Abstract: A gene of interest and the gene encoding hypoxanthine-aminopterin-thymidine (HPRT) can be co-targeted for Casp9 nuclease-mediated editing or alteration in a cell. Based on whether the HPRT gene is altered to encode a non-functional protein, or is not so-altered, the co-targeted cells can be selected and counter-selected. HPRT co-targeting can be used to sequentially disrupt as many genes of interest as cell viability permits.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: July 28, 2020
    Assignee: Institute For Cancer Research
    Inventors: Hong Yan, Shuren Liao
  • Publication number: 20200202961
    Abstract: Techniques for reducing read disturb of memory cells in a two-tier stack having a lower tier and an upper tier separated by an interface. In a read operation, the channels of NAND strings are discharged before reading the selected memory cells. A discharge period is set based on a position of the selected word line in a stack or block of memory cells. The discharge period is longer when the selected word line is in the lower tier than in the upper tier. Additionally, the discharge period is longer when the selected word line is at a top of the lower tier than at a bottom of the lower tier. Other options to increase the discharge include increasing a ramp up rate and a peak level of the word line voltages during the discharge period as a function of the position of the selected word line.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 25, 2020
    Applicant: SanDisk Technologies LLC
    Inventors: Hong-Yan Chen, Wei Zhao, Yingda Dong
  • Publication number: 20200202962
    Abstract: Techniques for reducing neighbor word line interference (NWI) of memory cells which are formed in a two-tier stack having a lower tier and an upper tier separated by an interface. In one approach, an upward word line programming order is used for a top portion of the top tier, and a downward word line programming order is used for a bottom portion of the top tier and for the bottom tier. Additionally, for memory cells which receive NWI from both adjacent word lines, options include programming fewer bits per cell, performing multi-pass programming and/or use lower verify voltages. Options also include increasing a control gate length of the memory cells and increasing a height of a dielectric region adjacent to the memory cells.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 25, 2020
    Applicant: SanDisk Technologies LLC
    Inventors: Hong-Yan Chen, Yingda Dong, Zhengyi Zhang
  • Patent number: 10689654
    Abstract: A bivalent siRNA chimera platform capable of efficiently delivering and silencing two or more genes in vivo or in vitro is provided. Methods of using the bivalent siRNA chimeras for selectively targeting cells to down-regulate the expression of multiple genes are also provided.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: June 23, 2020
    Assignee: Augusta University Research Institute, Inc.
    Inventor: Hong Yan Liu
  • Patent number: 10685723
    Abstract: Techniques for reducing read disturb of memory cells in a two-tier stack having a lower tier and an upper tier separated by an interface. In a read operation, the channels of NAND strings are discharged before reading the selected memory cells. A discharge period is set based on a position of the selected word line in a stack or block of memory cells. The discharge period is longer when the selected word line is in the lower tier than in the upper tier. Additionally, the discharge period is longer when the selected word line is at a top of the lower tier than at a bottom of the lower tier. Other options to increase the discharge include increasing a ramp up rate and a peak level of the word line voltages during the discharge period as a function of the position of the selected word line.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: June 16, 2020
    Assignee: SanDisk Technologies LLC
    Inventors: Hong-Yan Chen, Wei Zhao, Yingda Dong
  • Patent number: 10665306
    Abstract: Techniques are disclosed for reducing an injection type of program disturb in a memory device. In one aspect, a discharge operation is performed at the start of a program loop. This operation discharges residue electrons from the channel region on the source side of the selected word line, WLn, to the channel region on the drain side of WLn. As a result, in a subsequent channel pre-charge operation, the residue electrons can be more easily removed from the channel. The discharge operation involves applying a voltage pulse to WLn and a first set of drain-side word lines which is adjacent to WLn. The remaining unselected word lines may be held at ground during the voltage pulse.
    Type: Grant
    Filed: April 8, 2019
    Date of Patent: May 26, 2020
    Assignee: SanDisk Technologies LLC
    Inventors: Hong-Yan Chen, Henry Chin
  • Patent number: D890330
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: July 14, 2020
    Assignee: Janssen Pharmaceutica NV
    Inventors: Jungli Wang, Michael Cannamela, Hong Yan, Rochelle Kleinberg
  • Patent number: D890915
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: July 21, 2020
    Assignee: Janssen Pharmaceutica NV
    Inventors: Jingli Wang, Michael Cannamela, Hong Yan, Rochelle Kleinberg