Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.

Abstract: Proposed is a method of controlling a hybrid electric vehicle. In particular, the method includes: connecting a first motor directly connected with an engine with a second motor directly connected with an input end of a transmission, and determining whether to distribute an amount of error torque for the engine to the first motor or each of the first motor and the second motor on the basis of an efficiency of the first motor and an efficiency of the second motor.

Abstract: The present invention provides a method for manufacturing a high-nickel positive electrode active material comprising the steps of preparing a raw material containing nickel and cobalt; separating a liquid intermediate by leaching a metal component in the pulverized raw material using an acid and removing impurities; and co-precipitating a precursor of a positive electrode active material by adding a chelating agent and a hydroxide precipitant to the liquid intermediate.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.

Abstract: A hybrid electric vehicle and a method of driving control for same, which more effectively increases an amount of regenerative braking during deceleration and allows a rapid restart. A method for controlling a hybrid electric vehicle, including a step-variable transmission according to an embodiment of the present disclosure, may include an operation of prohibiting shifting when a preconfigured deceleration braking condition is satisfied. The method may further include an operation of slip-controlling an engine clutch disposed between an engine and a driving motor when an acceleration pedal is operated before a car stop holding time, in which the deceleration braking condition is maintained, exceeds a preconfigured reference time.

Abstract: A semiconductor device includes a lower stack structure that includes a lower word line, an upper stack structure that is on the lower stack structure and includes an upper word line, a decoder that is adjacent to the lower stack structure and the upper stack structure, a signal interconnection that is connected to the decoder, a lower selector that is connected to the signal interconnection and further connected to the lower word line, and an upper selector that is connected to the signal interconnection, isolated from direct contact with the lower selector, and further connected to the upper word line.

Abstract: A method for controlling a hybrid electric vehicle includes: connecting a first motor directly connected to an engine to a second motor directly connected to a transmission input terminal through a dual mass flywheel; determining a target angular acceleration of the first motor according to a gear shifting progress rate so that an angular acceleration of the first motor follows a target angular acceleration of the transmission input terminal when a gearshift is performed in the transmission; and controlling a torque of the first motor based on the target angular acceleration of the first motor.

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

Abstract: A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

Abstract: A method for controlling a transmission of a vehicle includes: determining whether a controller receives an acceleration pedal off signal corresponding to a lift foot up (LFU) shift request signal from an acceleration pedal sensor; determining whether an output signal value of a brake pedal sensor detecting a position value of a brake pedal is less than a brake reference value when the acceleration pedal off signal is received; determining whether a gear shifting progressing rate of the transmission performing a LFU shift in response to the LFU shift request signal is less than a progressing rate reference value when an output signal value of the brake pedal sensor is equal to or greater than the brake reference value; and controlling the transmission to hold the LFU shift when the gear shifting progressing rate of the transmission is less than the progressing rate reference value.

Abstract: The present disclosure provides a system and method for determining whether to start an engine. The system includes an engine configured to provide driving force for a vehicle through combustion of fuel, a motor configured to provide driving force for the vehicle using electrical energy, an engine clutch connecting the engine and a drive shaft, and a controller configured to control engagement of the engine clutch and starting of the engine. The controller calculates a predicted vehicle speed at the time of engagement of the engine clutch based on the current vehicle speed upon a request for passive run driving of the vehicle. The controller determines whether to start the engine by comparing the predicted vehicle speed with a reference vehicle speed.

Abstract: A nonvolatile memory device includes a first lower interlayer insulation layer and a second lower interlayer insulation layer that are sequentially stacked in a first direction; a lower metal layer disposed in the first lower interlayer insulation layer; and a plurality of lower bonding metals disposed in the first lower interlayer insulation layer and the second lower interlayer insulation layer and spaced apart from each other in a second direction that intersects the first direction. An uppermost surface in the first direction of the lower metal layer is lower than an uppermost surface in the first direction of the plurality of lower bonding metals, and the lower metal layer is placed between the plurality of lower bonding metals.

Abstract: A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

Abstract: One embodiment of the present invention relates to a rotor and a motor having same, the rotor comprising: a rotor core; and a plurality of magnets arranged to be spaced apart from each other on an outer circumferential surface of the rotor core, wherein the rotor core includes: a body; and protrusions protruding obliquely inward at a predetermined angle from an inner circumferential surface of the body, wherein a predetermined gap (G1) is formed between the inner circumferential surface of the body and the end of each of the protrusions. Accordingly, the rotor and the motor having the same may minimize the amount of change in the outer circumferential surface of the rotor core by using the protrusions. As a result, it is possible to inhibit separation of the magnets attached to the outer circumferential surface of the rotor core.

Abstract: A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.

Abstract: A semiconductor device includes a substrate having first and second active patterns therein, which are spaced apart from each other. The first active pattern has a top surface that is elevated relative to a top surface of the second active pattern. A channel semiconductor layer is provided on the top surface of the first active pattern. A first gate pattern is provided, which includes a first insulating pattern, on the channel semiconductor layer. A second gate pattern is provided, which includes a second insulating pattern having a thickness greater than a thickness of the first insulating pattern, on the top surface of the second active pattern.

Abstract: A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.