Abstract: A method includes forming a first conductive line and a second conductive line in a dielectric layer, etching a portion of the dielectric layer to form a trench between the first conductive line and the second conductive line, and forming a first etch stop layer. The first etch stop layer extends into the trench. A second etch stop layer is formed over the first etch stop layer. The second etch stop layer extends into the trench, and the second etch stop layer is more conformal than the first etch stop layer. A dielectric material is filled into the trench and over the second etch stop layer. An air gap is formed in the dielectric material.

Abstract: One or more semiconductor arrangements are provided. A semiconductor arrangement includes a first dielectric layer defining a first recess, a first contact in the first dielectric layer, a first metal cap over at least part of the first contact and a second dielectric layer over the first dielectric layer within the first recess and defining an air gap proximate the first contact. One or more methods of forming a semiconductor arrangement are also provided. Such a method includes forming a first metal cap on a first exposed surface of a first contact, the first metal cap having an extension region that extends into a first recess defined in a first dielectric layer and forming a second dielectric layer over the first dielectric layer within the first recess such that an air gap is defined within the second dielectric layer proximate the first contact due to the extension region.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a gas delivery ring with an outlet disposed under the gas import. A pressure near the outlet of the gas delivery ring is smaller than that of the rest of the vacuum chamber.

Abstract: A method includes forming a first conductive line and a second conductive line in a dielectric layer, etching a portion of the dielectric layer to form a trench between the first conductive line and the second conductive line, and forming a first etch stop layer. The first etch stop layer extends into the trench. A second etch stop layer is formed over the first etch stop layer. The second etch stop layer extends into the trench, and the second etch stop layer is more conformal than the first etch stop layer. A dielectric material is filled into the trench and over the second etch stop layer. An air gap is formed in the dielectric material.

Abstract: A semiconductor structure includes a semiconductor substrate and a conductive feature formed over the semiconductor substrate, an etch stop layer formed over the conductive feature, a dielectric layer formed over the etch stop layer, a contact trench formed in the dielectric layer, a bottom of the contact trench being disposed over a top surface of the conductive feature, and a self-aligned sealing oxide layer formed on the dielectric layer. The self-aligned sealing oxide layer is conformed to sidewalls of the dielectric layer exposed in the contact trench.

Abstract: The present disclosure provides a method of fabricating a semiconductor structure in accordance with some embodiments. The method includes forming a first low-k dielectric layer over a substrate; forming a first and second metal features in the first low-k dielectric layer; forming a first trench in the first low-k dielectric layer, the first trench spanning between the first and second metal features; performing a ultraviolet (UV) treatment to sidewalls of the first low-k dielectric layer in the first trench; forming a first etch stop layer in the first trench; and depositing a second low-k dielectric layer on the first etch stop layer, thereby forming an air gap in the first trench.

Abstract: A method includes forming a first conductive line and a second conductive line in a dielectric layer, etching a portion of the dielectric layer to form a trench between the first conductive line and the second conductive line, and forming a first etch stop layer. The first etch stop layer extends into the trench. A second etch stop layer is formed over the first etch stop layer. The second etch stop layer extends into the trench, and the second etch stop layer is more conformal than the first etch stop layer. A dielectric material is filled into the trench and over the second etch stop layer. An air gap is formed in the dielectric material.

Abstract: The present disclosure provides a method for forming a semiconductor structure. In accordance with some embodiments, the method includes providing a substrate and a conductive feature formed over the substrate; forming a first etch stop layer over the conductive feature; forming a low-k dielectric layer over the first etch stop layer; etching the low-k dielectric layer to form a contact trench aligned with the conductive feature; performing a sputtering process to the first etch stop layer exposed in the contact trench; and forming a sealing oxide layer on the low-k dielectric layer. In some embodiments, the sealing oxide layer is self-aligned and conformed to surfaces of the low-k dielectric layer exposed in the contact trench.

Abstract: A semiconductor device includes metal wirings formed in a first interlayer dielectric layer disposed over a substrate, a first insulating layer covering portions of the metal wirings and the first interlayer dielectric layer, a second interlayer dielectric layer with air gaps disposed in a recess between adjacent two metal wirings, and a protective layer formed in a portion of an upper surface of the first interlayer dielectric layer, where the recess is not formed.

Abstract: A semiconductor device includes metal wirings formed in a first interlayer dielectric layer disposed over a substrate, a first insulating layer covering portions of the metal wirings and the first interlayer dielectric layer, a second interlayer dielectric layer with air gaps disposed in a recess between adjacent two metal wirings, and a protective layer formed in a portion of an upper surface of the first interlayer dielectric layer, where the recess is not formed.

Abstract: Plasma-enhanced chemical vapor deposition (PECVD) devices enable the generation of a plasma in a plasma zone of a deposition chamber, which reacts with a surface of a substrate to form a deposited film in the fabrication of a semiconductor component. The plasma generator is often positioned over the center of the substrate, and the generated plasma often remains in the vicinity of the plasma generator, resulting in a thicker deposition near the center than at the edges of the substrate. Tighter process control is achievable by positioning one or more electromagnets in a periphery of the plasma zone and supplying power to generate a magnetic field, thereby inducing the charged plasma to achieve a more consistent distribution within the plasma zone and more uniform deposition on the substrate. Variations in the number, configuration, and powering of the electromagnets enable various redistributive effects on the plasma within the plasma zone.

Abstract: One or more techniques or systems for forming a semiconductor structure having a gap are provided herein. In some embodiments, a gap is formed between a first etch stop layer (ESL) and an ESL seal region. For example, the gap is formed by removing a portion of a low-k (LK) dielectric region above an oxide region and removing the oxide region. In some embodiments, the oxide region below the LK dielectric region facilitates removal of the LK dielectric region, at least because the oxide region enhances a bottom etch rate of a bottom of the LK dielectric region such that the bottom etch rate is similar to a wall etch rate of a wall of the LK dielectric region.

Abstract: One or more semiconductor arrangements are provided. A semiconductor arrangement includes a first dielectric layer defining a first recess, a first contact in the first dielectric layer, a first metal cap over at least part of the first contact and a second dielectric layer over the first dielectric layer within the first recess and defining an air gap proximate the first contact. One or more methods of forming a semiconductor arrangement are also provided. Such a method includes forming a first metal cap on a first exposed surface of a first contact, the first metal cap having an extension region that extends into a first recess defined in a first dielectric layer and forming a second dielectric layer over the first dielectric layer within the first recess such that an air gap is defined within the second dielectric layer proximate the first contact due to the extension region.

Abstract: One or more techniques or systems for forming a semiconductor structure having a gap are provided herein. In some embodiments, a gap is formed between a first etch stop layer (ESL) and an ESL seal region. For example, the gap is formed by removing a portion of a low-k (LK) dielectric region above an oxide region and removing the oxide region. In some embodiments, the oxide region below the LK dielectric region facilitates removal of the LK dielectric region, at least because the oxide region enhances a bottom etch rate of a bottom of the LK dielectric region such that the bottom etch rate is similar to a wall etch rate of a wall of the LK dielectric region.

Abstract: One or more semiconductor arrangements are provided. A semiconductor arrangement includes a first dielectric layer defining a first recess, a first contact in the first dielectric layer, a first metal cap over at least part of the first contact and a second dielectric layer over the first dielectric layer within the first recess and defining an air gap proximate the first contact.

Abstract: One or more techniques or systems for forming a semiconductor structure having a gap are provided herein. In some embodiments, a gap is formed between a first etch stop layer (ESL) and an ESL seal region. For example, the gap is formed by removing a portion of a low-k (LK) dielectric region above an oxide region and removing the oxide region. In some embodiments, the oxide region below the LK dielectric region facilitates removal of the LK dielectric region, at least because the oxide region enhances a bottom etch rate of a bottom of the LK dielectric region such that the bottom etch rate is similar to a wall etch rate of a wall of the LK dielectric region.

Abstract: The present disclosure provides a method for forming a semiconductor structure. In accordance with some embodiments, the method includes providing a substrate and a conductive feature formed over the substrate; forming a low-k dielectric layer over the conductive feature; forming a contact trench aligned with the conductive feature; and selectively growing a sealing layer which is a monolayer formed on sidewalls of the contact trench.

Abstract: One or more semiconductor arrangements are provided. A semiconductor arrangement includes a first dielectric layer defining a first recess, a first contact in the first dielectric layer, a first metal cap over at least part of the first contact and a second dielectric layer over the first dielectric layer within the first recess and defining an air gap proximate the first contact. One or more methods of forming a semiconductor arrangement are also provided. Such a method includes forming a first metal cap on a first exposed surface of a first contact, the first metal cap having an extension region that extends into a first recess defined in a first dielectric layer and forming a second dielectric layer over the first dielectric layer within the first recess such that an air gap is defined within the second dielectric layer proximate the first contact due to the extension region.

Abstract: The present disclosure provides a method for forming a semiconductor structure. In accordance with some embodiments, the method includes providing a substrate and a conductive feature formed over the substrate; forming a first etch stop layer over the conductive feature; forming a low-k dielectric layer over the first etch stop layer; etching the low-k dielectric layer to form a contact trench aligned with the conductive feature; performing a sputtering process to the first etch stop layer exposed in the contact trench; and forming a sealing oxide layer on the low-k dielectric layer. In some embodiments, the sealing oxide layer is self-aligned and conformed to surfaces of the low-k dielectric layer exposed in the contact trench.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a gas delivery ring with an outlet disposed under the gas import. A pressure near the outlet of the gas delivery ring is smaller than that of the rest of the vacuum chamber.