Abstract: The disclosure discloses an ultrasonic-assisted pretreatment method for extraction of multiple steroid hormones in a sediment, including the following steps: (1) lyophilizing the sediment, grinding the sediment, and passing the ground sediment through a 40-60-mesh sieve; (2) placing the sample obtained in step (1) in a container; (3) adding an extractant to the container in step (2), shaking the mixture for 15 s-30 s, centrifuging the mixture to collect an supernatant after ultrasonication, and repeating extraction three times; where the extractants used in the three times of extraction are two of methanol, acetonitrile and acetone; and (4) after mixing the supernatants of the three times of extraction obtained in step (3), concentrating the mixture under a nitrogen flow at 20-30° C., passing the concentrated mixture through a filter, and performing detection. By using the method of the disclosure, the maximum recovery can be up to 100%.

Abstract: A semiconductor device assembly is provided. The assembly includes a package substrate which has a tunneled interconnect structure. The tunneled interconnect structure has a solder-wettable surface, an interior cavity, and at least one microvia extending from the surface to the cavity. The assembly further includes a semiconductor device disposed over the substrate and a solder joint coupling the device and the substrate. The joint comprises the solder between the semiconductor device and the interconnect structure, which includes the solder on the surface, the solder in the microvia, and the solder within the interior cavity.

Abstract: Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus.

Abstract: Disclosed in the present invention is a rare-earth doped semiconductor material. Compounds of two rare-earth elements R and R? having different functions are introduced into an indium oxide containing material. The coupling of R element ions to an O2p orbit can effectively enhance the transfer efficiency of the rare-earth R? as a photogenerated electron transfer center, such that the light stability of a device with a small amount of R? doping can be achieved. Compared with single rare-earth element R? doping, due to less doping, the impact on a mobility is less, such that higher mobility and light stability devices can be obtained. Further provided in the present invention is a semiconductor-based thin-film transistor, and an application.

Abstract: A user terminal positioning method is used in an edge cloud server, and includes: receiving satellite positioning information sent by a user terminal; determining a location service area in which the user terminal is located; on the basis of the location service area, acquiring a differential correction model corresponding to the location service area from a public cloud server; using the satellite positioning information and the differential correction model to implement location calculation to obtain location information of the user terminal; and sending the location information to the user terminal.

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R? into an indium-containing MO semiconductor to form an InxMyRnR?mOz semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: The disclosure discloses an integrated riparian system for river/lake silt on-site treatment and application thereof, belonging to the technical field of silt treatment. The integrated riparian system includes three subsystems, namely a silt ecological treatment subsystem, a siphon drainage subsystem and a silt leachate advanced treatment subsystem. The silt ecological treatment subsystem is provided with plants, fillers, an aeration pipe and a water collection pipe from top to bottom, and a vent pipe is connected to the water collection pipe. A siphon in the siphon drainage subsystem is retractable and hump-shaped. The silt leachate advanced treatment subsystem includes a first-stage ecological treatment unit upflow wetland and a second-stage ecological treatment unit surface flow wetland.

Abstract: The disclosure discloses an ultrasonic-assisted pretreatment method for extraction of multiple steroid hormones in a sediment, including the following steps: (1) lyophilizing the sediment, grinding the sediment, and passing the ground sediment through a 40-60-mesh sieve; (2) placing the sample obtained in step (1) in a container; (3) adding an extractant to the container in step (2), shaking the mixture for 15 s-30 s, centrifuging the mixture to collect an supernatant after ultrasonication, and repeating extraction three times; where the extractants used in the three times of extraction are two of methanol, acetonitrile and acetone; and (4) after mixing the supernatants of the three times of extraction obtained in step (3), concentrating the mixture under a nitrogen flow at 20-30° C., passing the concentrated mixture through a filter, and performing detection. By using the method of the disclosure, the maximum recovery can be up to 100%.

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R? into an indium-containing MO semiconductor to form an InxMyRnR?mOz semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: The present embodiments relate to nucleic acid probes for detecting PTEN, ZBTB20-LSAMP, and LSAMP mutations. The nucleic acid probes are particularly useful for detecting deletions in the PTEN and LSAMP genes as diagnostics for prostate cancer, especially aggressive forms of prostate cancer for which treatment is indicated. The probes are particularly useful for in situ hybridization to chromosomes present in tissue samples.

Abstract: A detectably labeled DNA FISH probe comprises detectably-labeled nucleic acid molecules from the 8p11.23 chromosomal region and from the 2q35 chromosomal region. The probe is a FISH probe capable of detecting a fusion between the FGFR1 and FN1 genes. A patient having a disease associated with a FN1-FGFR1 gene fusion may be treated by: detecting translocation of a portion of the FGFR1 gene to the FN1 gene using chromosomal FISH probes, and treating a patient with said translocation and gene fusion with 1) a drug which inhibits FGF 2) a drug which inhibits FGFR1, and/or a 3) drug which targets a signaling pathway associated with FGFR1.

Abstract: A power supply control circuit for an electronic device includes an input/output (I/O) microchip, a southbridge microchip and a power management unit. The control circuit is electrically connected to the I/O microchip and the southbridge microchip to output a driving voltage to the I/O microchip and the southbridge microchip. The power management unit includes a power management microchip electrically connected to the control circuit, the I/O microchip and the southbridge microchip. The power management microchip outputs a power on/off control signal to the southbridge microchip to power on/off the electronic device, and controls the control circuit to provide a driving voltage to the I/O microchip and the southbridge microchip when the electronic device is powered on and controls the control circuit to stop providing the driving voltage to the I/O microchip and the southbridge microchip when the electronic device is powered off.

Abstract: Some embodiments of the present invention provide a method and apparatus for a Vernier ring time to digital converter having a single clock input and an all digital circuit that calculates a fixed delay relationship between a set of slow buffers and fast buffers. A method for calibrating a Vernier Delay Line of a TDC, comprising the steps of inputting a reference clock to a slow buffer and to a fast buffer, determining a delay ratio of the slow buffer and fast buffer; and adjusting the delay ratio of the slow buffer and fast buffer to a fixed delay ratio value wherein an up-down accumulator generates control signals to adjust the slow buffer.

Abstract: A charging circuit employed in an electronic apparatus is operable to charge a portable electronic device. The charging circuit includes a charging control microchip including two control terminals, a southbridge microchip, a logic control circuit, and a basic input/output system (BIOS). The southbridge microchip and the BIOS are both electronically connected to the logic control circuit to control the logic control circuit to set or reset voltage of the two control terminals, then the charging control microchip is switched to a charging mode or a data transmission mode according to the voltage of the two control terminals.

Abstract: A power supply circuit includes a basic input output system (BIOS), a super input output (SIO), a bivibrator, a logical selector, and a voltage converter. The basic input output system (BIOS) is configured for storing different operation modes of a computer. The super input output (SIO) is configured for generating standby mode signals according to the different operation modes. The bivibrator is configured for generating a reference signal when upon receiving a clock signal from the computer when the computer is turned on. The logical selector is configured for generating a standby control signal in response to the reference signal and one of the standby mode signals. The voltage converter is configured for transforming the first standby voltage into a second standby voltage to drive the SIO. The SIO receives the second standby voltage before the clock signal is delayed and provided to the SIO to start the computer.

Abstract: An electronic apparatus includes a microphone, a processor, a motherboard, and a voice recognition microchip. The voice recognition microchip compares a voice command with a pre-stored voice command. If the voice command is identical with the pre-stored voice command, the processor outputs a control signal to the motherboard. The motherboard controls the electronic apparatus to perform an action corresponding to the control signal.

Abstract: An indication circuit is used on a motherboard. First and second pins on the motherboard output different signals corresponding to different power-on self-test errors. The indication circuit includes first to third electronic switches, first and second light-emitting diodes, and first to fifth resistors. When different errors occurred during power-on self-test, different signals are output from the first and second pins on the motherboard, such that to make the first and second light-emitting diodes activated or deactivated. As a result, the indication circuit can indicate different errors when the motherboard is performing power-on self-test.

Abstract: An indication circuit is used on a motherboard. First and second pins on the motherboard output different signals corresponding to different power-on self-test errors. The indication circuit includes first to third electronic switches, first and second light-emitting diodes, and first to fifth resistors. When different errors occurred during power-on self-test, different signals are output from the first and second pins on the motherboard, such that to make the first and second light-emitting diodes activated or deactivated. As a result, the indication circuit can indicate different errors when the motherboard is performing power-on self-test.