Abstract: Disclosed are a novel interferon lambda variant produced through structure-based glycoengineering and a method of producing the same. The novel interferon lambda variant and the method of producing the same exhibit remarkably improved production and yield in mammalian cell lines using structural information-based glycoengineering even through conventional purification protocols, and exhibit significantly improved therapeutic properties such as stability, half-life, and fraction of functional proteins during treatment, compared to wild-type interferon lambda. In addition, the novel interferon lambda variant and the method of producing the same according to the present invention have higher antiviral activity and interferon-stimulated gene (ISG)-inducing activity than wild-type interferon lambda, and thus are useful for the prevention and treatment of immune-related diseases such as cancer and autoimmune diseases as well as various viral infections such as infection with SARS-CoV-2 (COVID-19).

Abstract: A moving device for a three-dimensional scanner, including a main body, a moving mechanism, a round tube, a driving mechanism and a fixing mechanism. A connecting rod is vertically fixed on an upper side of the main body. The moving mechanism is configured to drive the main body to move. The round tube is sleevedly provided on an outer side of the connecting rod. A fixing sleeve is vertically fixed on an inner side wall of the round tube. A sliding rod is insertedly provided in the fixing sleeve. A lower end of the sliding rod is fixedly connected to the main body, and an upper end extends to be below the 3D scanner and is provided with a top plate. When the round tube moves upward to an outer side of the 3D scanner, the round tube is fixed by the fixing mechanism.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: The present application provides a system and a method for water-based chemical-looping hydrogen generation. The method for water-based chemical-looping hydrogen generation comprises a water-based reduction process of oxygen carrier and a water-based oxidation process of oxygen carrier, wherein in the water-based reduction process of oxygen carrier, an oxygen carrier is reduced with a hydrocarbon fuel in the presence of a steam to produce a hydrogen gas as well as a reduced oxygen carrier and a carbon dioxide; and in the water-based oxidation process of oxygen carrier, the reduced oxygen carrier is oxidized with the steam to produce the hydrogen gas, while the reduced oxygen carrier is oxidized to its original state, thereby forming a chemical-looping. The present application can reduce the energy consumption while improving the efficiency of the hydrogen generation, enabling a zero energy consumption separation of carbon dioxide in the hydrogen generation process.

Abstract: Disclosed are imidazole and thiazole compounds, as well as pharmaceutical compositions and methods of use thereof. One embodiment is a compound having the structure and pharmaceutically acceptable salts, prodrugs and N-oxides thereof (and solvates and hydrates thereof), wherein X, A, Z, R1 and R? are as described herein. In certain embodiments, a compound disclosed herein inhibits TGF-?, and can be used to treat disease by blocking TGF-? signaling.

Abstract: Disclosed is an anti-counterfeiting printed material including: a background part for analyzing a distribution of Cyan Magenta Yellow Black (C/M/Y/K) after performing first color separation of an original image into C/M/Y/K, and printing the original image as C/M/Y/K lines each having an included angle preset according to each distribution; and a latent image part formed in a first region of the background part, and printed with the number of C/M/Y/K lines in a ratio different from the number of C/M/Y/K lines of the background part according to each distribution by performing secondary color separation, into C/M/Y/K, of a second region spaced apart from the first region by a preset distance.

Abstract: Disclosed is a pharmaceutical composition for preventing or treating severe acute respiratory syndrome coronavirus 2 infection disease, the composition comprising a compound represented by a Chemical Formula 1, or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: Disclosed is a pharmaceutical composition for preventing or treating severe acute respiratory syndrome coronavirus 2 infection disease, the composition comprising a compound represented by a Chemical Formula 1, or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: The present disclosure provides a photovoltaic-photothermal reaction complementary full-spectrum solar utilization system, comprising: a waveband thermal reactor having a reactant flow channel and a reaction chamber therein, a photovoltaic cell attached to a surface of the waveband thermal reactor, and a full spectrum concentrator configured to concentrate full spectrum sunlight onto a surface of the photovoltaic cell, wherein the full spectrum concentrating device concentrates the full spectrum sunlight onto a upper surface of the opaque or transmissive photovoltaic cell, wherein a portion of the sunlight is converted into electric energy and another portion of the sunlight is converted into thermal energy, and wherein the thermal energy is utilized by the waveband thermal reactor to preheat reactant(s) in the reaction chamber and to make a portion of the reactant(s) to undergo an endothermic chemical reaction such that the thermal energy is stored as chemical energy.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.

Abstract: The present disclosure provides a photovoltaic-photothermal reaction complementary full-spectrum solar utilization system, comprising: a waveband thermal reactor having a reactant flow channel and a reaction chamber therein, a photovoltaic cell attached to a surface of the waveband thermal reactor, and a full spectrum concentrator configured to concentrate full spectrum sunlight onto a surface of the photovoltaic cell, wherein the full spectrum concentrating device concentrates the full spectrum sunlight onto a upper surface of the opaque or transmissive photovoltaic cell, wherein a portion of the sunlight is converted into electric energy and another portion of the sunlight is converted into thermal energy, and wherein the thermal energy is utilized by the waveband thermal reactor to preheat reactant(s) in the reaction chamber and to make a portion of the reactant(s) to undergo an endothermic chemical reaction such that the thermal energy is stored as chemical energy.

Abstract: Disclosed is an anti-counterfeiting printed material including: a background part for analyzing a distribution of Cyan Magenta Yellow Black (C/M/Y/K) after performing first color separation of an original image into C/M/Y/K, and printing the original image as C/M/Y/K lines each having an included angle preset according to each distribution; and a latent image part formed in a first region of the background part, and printed with the number of C/M/Y/K lines in a ratio different from the number of C/M/Y/K lines of the background part according to each distribution by performing secondary color separation, into C/M/Y/K, of a second region spaced apart from the first region by a preset distance.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of photodiodes is formed from a front-side of a substrate. A plurality of boundary deep trench isolation (BDTI) trenches having a first depth and a plurality of multiple deep trench isolation (MDTI) trenches having a second depth are formed from a back-side of the substrate. A stack of dielectric layers is formed in the BDTI trenches and the MDTI trenches. A plurality of color filters is formed overlying the stack of dielectric layers corresponding to the plurality of photodiodes.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. The photodiode comprises a doped layer with a first doping type and an adjoining region of the substrate with a second doping type that is different than the first doping type. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions. A multiple deep trench isolation (MDTI) structure overlies the doped layer of the photodiode. The MDTI structure comprises a stack of dielectric layers lining sidewalls of a MDTI trench. A plurality of color filters is disposed at the back-side of the substrate corresponding to the respective photodiode of the plurality of pixel regions and overlying the MDTI structure.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.