Abstract: The present disclosure provides a method for preparing a semiconductor memory device with air gaps for reducing capacitive coupling between a bit line and an adjacent conductive feature. The method includes forming an isolation member defining an active region in a substrate and a doped area in the active region; forming a gate structure in the substrate, wherein the gate structure divides the doped are into a first doped region and a second doped region; forming a bit line structure on the first doped region; forming an air gap adjacent to the bit line structure; forming a capacitor plug on the second doped region and a barrier layer on a sidewall of the capacitor plug; and forming a landing pad on a top portion of the capacitor plug, wherein the landing pad comprises a first silicide layer over the protruding portion and a second silicide layer on a sidewall of the barrier layer.

Abstract: The present application relates to antibodies specifically binding to the V-domain immunoglobulin-containing suppressor of T-cell activation (VISTA) at acidic pH and their use in cancer treatment. In some embodiments, the antibodies bind specifically to human VISTA at acidic pH, but do not significantly bind to human VISTA at neutral or physiological pH.

Abstract: An electrical connector including an insulating body, a plurality of terminals disposed in the insulating body, a first shell sheathing the insulating body to form an insertion space for connecting to another electrical connector, and a second shell superposed on the first shell is provided. The first shell has at least one first soldering leg adjacent to the insertion space, and the second shell has at least one second soldering leg away from the insertion space.

Abstract: An electrical connector suited for being assembled to a circuit board is provided. The electrical connector includes an insulating body, a plurality of terminals disposed in the insulating body, a first metallic shell sheathing the insulating body to form an insertion space, a second metallic shell superposed on the first metallic shell, and a metallic plate disposed in the insulating body. The second metallic shell has a rear plate opposite to the rear interface, and is not electrically connected to the circuit board. The metallic plate has at least one bending extending out of the insulating body to abut the rear plate, such that the metallic plate and the second metallic shell are electrically conducted.

Abstract: The present disclosure relates to a semiconductor device structure with a serpentine conductive feature and a method for forming the semiconductor device structure. The semiconductor device structure includes a conductive pad disposed in a semiconductor substrate, and a first mask layer disposed over the semiconductor substrate. The semiconductor device structure also includes a second mask layer disposed over the first mask layer. The first mask layer and the second mask layer are made of different materials. The semiconductor device structure further includes a conductive feature penetrating through the first mask layer and the second mask layer to connect to the conductive pad. The conductive feature has a serpentine pattern in a top view.

Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.

Abstract: A semiconductor device structure includes a first conductive layer disposed over a semiconductor substrate, and a second conductive layer disposed over the first conductive layer. The semiconductor device structure also includes a first conductive plug disposed between and electrically connecting the first conductive layer and the second conductive layer. The first conductive plug includes copper. The semiconductor device structure further includes a first lining layer surrounding the first conductive plug. The first lining layer includes manganese.

Abstract: An electrical connector including an insulating body, a plurality of terminals disposed in the insulating body, a first shell, and a second shell is provided. The insulating body has a front side and a rear side opposite to each other, and has a protruding portion located at the rear side. The first shell is sheathed on the insulating body to form an insertion space located at the front side. The second shell is superposed on the first shell and has a locking hole at the rear side, wherein the protruding portion is locked with the locking hole, such that the second shell is fixed to the insulating body.

Abstract: The present disclosure relates to a semiconductor device structure with a serpentine conductive feature and a method for forming the semiconductor device structure. The semiconductor device structure includes a conductive pad disposed in a semiconductor substrate, and a first mask layer disposed over the semiconductor substrate. The semiconductor device structure also includes a second mask layer disposed over the first mask layer. The first mask layer and the second mask layer are made of different materials. The semiconductor device structure further includes a conductive feature penetrating through the first mask layer and the second mask layer to connect to the conductive pad. The conductive feature has a serpentine pattern in a top view.

Abstract: A computer-implemented method for multi-modal interaction with structured web page data includes automatically injecting event monitoring code into a web page. One or more event streams generated by the injected event monitoring code are received. A request to perform an operation on data displayed on the web page is received from a user. A command is generated that has one or more parameters based at least in part on one or more mappings between the received request and the received one or more event streams. The command to fulfil the received request is executed by interacting with the web page.

Abstract: The present disclosure provides a semiconductor memory device with air gaps for reducing capacitive coupling between a bit line and an adjacent conductive feature and a method for preparing the semiconductor memory device.

Abstract: Human speech signals that are uttered within an environment are transcribed; the environment includes one or more avatars representing one or more software agents; the human speech signals are directed to at least one of the avatars. At least one non-speech behavioral trace is obtained within the environment; the trace is representative of non-speech behavior directed to the at least one of the avatars. The transcribed human speech signals and the at least one non-speech behavioral trace are forwarded to the one or more software agents. A proposed act is obtained from at least one of the agents; responsive thereto, a command is issued to cause the avatar corresponding to the software agent from which the proposed act is obtained to emit synthesized speech and to act visually in accordance with the proposed act.

Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.

Abstract: The present application discloses a method for preparing a semiconductor device with an air gap structure between conductive structures. The method includes: forming a first bit line, a second bit line, a first capacitor contact and a second capacitor contact over a semiconductor substrate, wherein the first capacitor contact and the second capacitor contact are disposed between the first bit line and the second bit line; forming a first dielectric layer over a sidewall of the first bit line, a sidewall of the second bit line, a sidewall of the first capacitor contact and a sidewall of the second capacitor contact such that an opening is formed and surrounded by the first dielectric layer; filling the opening with a dielectric structure; and removing the first dielectric layer to form an opening structure surrounding the dielectric structure.

Abstract: A frame and a mobility scooter. The frame includes a first longitudinal beam, a second longitudinal beam, a head tube and a first cross beam. A first end of the first longitudinal beam and a first end of the second longitudinal beams are both coupled to the head tube. The first cross beam has a first end coupled to the first longitudinal beam and a second end coupled to the second longitudinal beam. The first longitudinal beam is divided into a first front tube section and a first rear tube section by the first cross beam, the second longitudinal beam is divided into a second front tube section and a second rear tube section by the first cross beam, and the first and second rear tube sections form a rear fork of the mobility scooter.

Abstract: A battery compartment, a battery compartment assembly and an electric scooter are provided. The battery compartment is used for an electric scooter, and includes a compartment body and a limiting flange. The electric scooter includes a frame with an opening, and the opening runs through the frame in an up-down direction. The compartment body is configured to penetrate through the opening, and the limiting flange is arranged to an outer side wall of the compartment body and configured to abut against the frame to prevent the compartment body from falling out of the opening downwards.

Abstract: The present application discloses a semiconductor device with slanted conductive layers and a method for fabricating the semiconductor device with the slanted conductive layers. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, first slanted conductive layers positioned in the first insulating layer, and a top conductive layer positioned covering the first slanted conductive layers.

Abstract: An ESD protection device includes a communication cable and an ESD cable. An end of the communication cable is connected to an electronic device. The ESD cable is connected to the communication cable and configured to discharge static electricity of the electronic device through the communication cable. A first end of the ESD cable is connected to the communication cable, and a second end of the ESD cable is connected to the electronic device.

Abstract: A system for detecting drunken driver is presented. The system includes an alcohol detecting device, a photographing device, and a locking device. The alcohol detecting device can receive a blood alcohol content value of a driver of a vehicle detected by a sensor, and determine whether the blood alcohol content value exceeds a first predetermined value. The alcohol detecting device can send alcohol concentration exceeding information to the photographing device to record video and to the locking device to lock vehicle when the blood alcohol content value exceeds the first predetermined value.

Abstract: Generating a prediction block for coding a block includes determining an adaptive intra-prediction mode indicative of at least a training region and a configuration of neighboring pixel locations. The training region neighbors the block and includes a plurality of reconstructed pixels. Filter coefficients are obtained. The filter coefficients are used to obtain respective prediction pixels of neighboring pixels within the training region when applied to defined respective configurations of the neighboring pixels according to the configuration of the neighboring pixels. The filter coefficients minimize a function of differences, each difference being a respective difference between a pixel in the training region and a prediction of that pixel in the training region.