Abstract: Disclosed is a bipolar high-frequency electric knife, including a cutter portion, a main body part and an operation portion. The cutter portion includes a first electrode portion, a second electrode portion and an insulation member. The main body part includes a position-limiting part and an insulation sheath. The operation portion includes a handle, a button, a socket, a first wire and a second wire.

Abstract: An LED chip comprises: an operation substrate; a first conductive layer disposed on a functional surface of the operation substrate; a die disposed on the first conductive layer, wherein the die comprises a first semiconductor layer and a second semiconductor layer; a first electrode layer electrically connected with the first conductive layer; and a second electrode layer electrically connected with the second semiconductor layer, wherein a first isolation layer is disposed between the second electrode layer and the first conductive layer. In embodiments of the present disclosure, the first electrode layer and the second electrode layer are disposed on the bottom surface of the operation substrate, and are formed after the LED die is formed. Therefore, a dicing process and a packaging process are not required, thus, process steps are simplified and process cost is reduced, which is conducive to achieve “free packaging” technology.

Abstract: A semiconductor apparatus includes a driver circuit wafer including a plurality of driver circuits arranged in an array, a bonding metal layer formed over the driver circuit wafer, and a horizontally continuous functional device epi-structure layer formed over the bonding metal layer and covering the driver circuits.

Abstract: A semiconductor apparatus includes a driver circuit wafer including a plurality of driver circuits arranged in an array, a bonding metal layer formed over the driver circuit wafer, and a horizontally continuous functional device epi-structure layer formed over the bonding metal layer and covering the driver circuits.

Abstract: A GaN-based LED epitaxial structure comprises a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminous layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer which are sequentially stacked, wherein the non-doped GaN buffer layer comprises a sandwich structure consisting of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked. For the GaN-based LED epitaxial structure and the preparation method thereof, the non-doped GaN buffer layer with the sandwich structure consisting of the GaN layer, the AlGaN layer and the GaN layer is used as a buffer layer, the buffer layer changes light scattering directions by using materials with different refractive indexes and thus the luminous efficiency can be improved.

Abstract: A method for manufacturing a high voltage LED flip chip is provided, including: providing a substrate; forming an epitaxy stacking layer on the substrate; etching the epitaxy stacking layer to form a first groove and a Mesa-platform on each chip-unit region; forming a first electrode on each of the Mesa-platforms, wherein the first electrodes on two neighboring chip-unit regions form a second groove; forming a first insulation layer covering the Mesa-platforms and the first electrodes, filling the second groove and partially filling the first grooves to form a third groove; etching the first insulation layer to form fourth groove; and forming an interconnection electrode, wherein the interconnection electrode fills the third groove and the fourth groove, two neighboring interconnection electrodes form a fifth groove, the interconnection electrode connects the first electrode on one chip-unit region and the first semiconductor layer on the other chip-unit region. LED formed has improved performance.

Abstract: A high-voltage flip LED chip and a manufacturing method thereof. In the high-voltage flip LED chip, a P-N electrode connecting metal block is filled into an isolation trench between two adjacent chip units and is respectively filled into a first electrode hole of one chip unit and a second electrode hole of the other chip unit to serially connect the two adjacent chips.

Abstract: A high voltage LED flip chip includes two or more regions; a Mesa-platform, the Mesa-platform in each region has a first groove; a first electrode located on the Mesa-platform, an area between the first electrodes in two adjacent regions forms a second groove; a first insulation layer covering the Mesa-platforms and the first electrodes, the first insulation layer fills the second groove and partially fills the first groove, and a part of the first groove which is not filled forms a third groove; a fourth groove formed in the first insulation layer, the fourth groove exposes a surface of the first electrode; and an interconnection electrode, the interconnection electrode comprises a first portion connecting the first semiconductor layer through the third groove in a particular region with the first electrode through the fourth groove in another region adjacent to the particular region. The LED formed has improved performance.

Abstract: A semiconductor apparatus includes a driver circuit wafer including a plurality of driver circuits arranged in an array, a bonding metal layer formed over the driver circuit wafer, and a horizontally continuous functional device epi-structure layer formed over the bonding metal layer and covering the driver circuits.

Abstract: A method for manufacturing a high voltage LED flip chip is provided, including: providing a substrate; forming an epitaxy stacking layer on the substrate; etching the epitaxy stacking layer to form a first groove and a Mesa-platform on each chip-unit region; forming a first electrode on each of the Mesa-platforms, wherein the first electrodes on two neighboring chip-unit regions form a second groove; forming a first insulation layer covering the Mesa-platforms and the first electrodes, filling the second groove and partially filling the first grooves to form a third groove; etching the first insulation layer to form fourth groove; and forming an interconnection electrode, wherein the interconnection electrode fills the third groove and the fourth groove, two neighboring interconnection electrodes form a fifth groove, the interconnection electrode connects the first electrode on one chip-unit region and the first semiconductor layer on the other chip-unit region. LED formed has improved performance.

Abstract: A high-voltage flip LED chip and a manufacturing method thereof. In the high-voltage flip LED chip, a P-N electrode connecting metal block is filled into an isolation trench between two adjacent chip units and is respectively filled into a first electrode hole of one chip unit and a second electrode hole of the other chip unit to serially connect the two adjacent chips.

Abstract: A high voltage LED flip chip includes two or more regions; a Mesa-platform, the Mesa-platform in each region has a first groove; a first electrode located on the Mesa-platform, an area between the first electrodes in two adjacent regions forms a second groove; a first insulation layer covering the Mesa-platforms and the first electrodes, the first insulation layer fills the second groove and partially fills the first groove, and a part of the first groove which is not filled forms a third groove; a fourth groove formed in the first insulation layer, the fourth groove exposes a surface of the first electrode; and an interconnection electrode, the interconnection electrode comprises a first portion connecting the first semiconductor layer through the third groove in a particular region with the first electrode through the fourth groove in another region adjacent to the particular region. The LED formed has improved performance.

Abstract: The invention discloses a louver roller system with a cam pin turning mechanism, including a base and a top cover, wherein a roller mechanism and a cam pin turning mechanism are mounted on the base, the roller mechanism is wound with ladder tapes, the roller mechanism is in axial connection with the cam pin turning mechanism, and the roller mechanism and the cam pin turning mechanism are driven to rotate by a square shaft. The roller mechanism controls horizontal rising and falling of secondary louver blades, and the roller within the roller mechanism rotates to wind or unwind the ladder tapes thereon and sequentially drives various secondary louver blades to rise and fall horizontally. When various secondary louver blades rise to a predetermined position, the roller drives the cam pin turning mechanism to bring a turning cylinder to rotate, so as to achieve turning of all louver blades.

Abstract: A method for immersion chilling and freezing tuna by CaCl2 with a low salt penetration amount, characterized by comprising following steps: carrying out a rapid block-cutting treatment on tuna meat under a sterile condition, and then immediately freezing the tuna blocks in CaCl2 salt water with concentrations of 25-30% and temperatures of minus 25 ˜minus 40 DEG C. respectively; completely immersing the tuna blocks in the salt water, directly placing a control group in a refrigerator at minus 25 DEG., and when the central temperature of the tuna blocks achieves minus 18 DEG C., rapidly taking out the tuna blocks from the salt water, and measuring the salt penetration amount and the various quality indexes, wherein a chilling mode for the salt water is to place 400 g of the CaCl2 salt water with the mass concentrations of 25.70%, 27.50%, 28.40% and 29.40% respectively in refrigerators at minus 25 DEG C., minus 30 DEG C., minus 35 DEG C. and minus 40 DEG C.

Abstract: A GaN-based LED epitaxial structure comprises a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminous layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer which are sequentially stacked, wherein the non-doped GaN buffer layer comprises a sandwich structure consisting of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked. For the GaN-based LED epitaxial structure and the preparation method thereof, the non-doped GaN buffer layer with the sandwich structure consisting of the GaN layer, the AlGaN layer and the GaN layer is used as a buffer layer, the buffer layer changes light scattering directions by using materials with different refractive indexes and thus the luminous efficiency can be improved.

Abstract: The present invention discloses a sequential control roller system for a variable pitch shutter. The system comprises a lifting device for controlling the overall lifting and switchover of all blades and a blade separating/shutting and turnover device for controlling the lifting of the blades relative to each other and the overall turnover of the blades. The lifting device is in transmission connection to the blade separating/shutting and turnover device. The lifting device comprises: a planetary gear clutch capable of controlling the retraction and extension of a lifting rope for realizing the overall fitting of all blades and capable of providing power to the blade separating/shutting and turnover device; and a switching slider mechanism for switching the working state of the planetary gear clutch. The blade separating/shutting and turnover device comprises a number of blade turnover drums and blade translation control rollers.

Abstract: The invention discloses a louver roller system with a cam pin turning mechanism, including a base and a top cover, wherein a roller mechanism and a cam pin turning mechanism are mounted on the base, the roller mechanism is wound with ladder tapes, the roller mechanism is in axial connection with the cam pin turning mechanism, and the roller mechanism and the cam pin turning mechanism are driven to rotate by a square shaft. The roller mechanism controls horizontal rising and falling of secondary louver blades, and the roller within the roller mechanism rotates to wind or unwind the ladder tapes thereon and sequentially drives various secondary louver blades to rise and fall horizontally. When various secondary louver blades rise to a predetermined position, the roller drives the cam pin turning mechanism to bring a turning cylinder to rotate, so as to achieve turning of all louver blades.