Abstract: A forced cooling circulation system for drilling mud, which includes a refrigeration unit (1), a secondary refrigerant tank (4), a coaxial convection heat exchanger (12) for mud and a mud pond (17), is disclosed. The refrigeration unit (1) is in connection with the secondary refrigerant tank (4) and the coaxial convection heat exchanger (12) for mud via a pump (2), and the coaxial convection heat exchanger (12) for mud is in connection with the mud pond (17) via a pump (15) and pipelines. Heat exchange tubes of the coaxial convection heat exchanger (12) for mud are disposed as a double-layer structure or a multi-layer structure, and the inner heat exchange tubes (23) are mounted inside of the outer heat exchange tubes (25). The secondary refrigerant or the mud is circulated in the annular space between the inner heat exchange tubes (23) and the outer heat exchange tubes (25), and the mud or the secondary refrigerant is circulated in the inner tubes (23).

Abstract: A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode.

Abstract: In some aspects, a memory cell is provided that includes a first conducting layer, a reversible resistance switching element above the first conducting layer, a second conducting layer above the reversible resistance switching element, and a liner disposed about a sidewall of the reversible resistance switching element. The reversible resistance switching element includes a first metal oxide material, and the liner includes the first metal oxide material. Numerous other aspects are provided.

Abstract: A method is provided that includes forming completely distinct first features above a substrate, forming sidewall spacers on the first features, filling spaces between adjacent sidewall spacers with filler features, and removing the sidewall spacers. Numerous other aspects are provided.

Abstract: A memory is described that includes a shared diode layer and a memory element coupled to the diode layer. The memory element has a pie slice-shape, and includes a sidewall having a carbon film thereon. Numerous other aspects are also disclosed.

Abstract: A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded.

Abstract: In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided.

Abstract: Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by (a) depositing a layer of the carbon material above a substrate; (b) doping the deposited carbon layer with a dopant; (c) depositing a layer of the carbon material over the doped carbon layer; and (d) iteratively repeating steps (b) and (c) to form a stack of doped carbon layers having a desired thickness. Other aspects are also provided.

Abstract: Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon-based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first width, coupled to a reversible resistivity switching material, such as aC, having a second width smaller than the first width.

Abstract: Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon-based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first cross-sectional area, coupled to a reversible resistivity switching material, such as aC, having a region that has a second cross-sectional area smaller than the first cross-sectional area.

Abstract: In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (“MIM”) stack above a substrate, the MIM stack including a carbon-based switching material having a resistivity of at least 1×104 ohm-cm; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.

Abstract: In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.

Abstract: Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a carbon-based reversible resistance-switching material above a substrate, forming a carbon nitride layer above the carbon-based reversible resistance-switching material, and forming a barrier material above the carbon nitride layer using an atomic layer deposition process. Other aspects are also provided.

Abstract: In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of the feature defined by the first dielectric layer and in contact with the first conducting layer at a bottom of the feature; and (4) a second conducting layer disposed above and in contact with the graphitic carbon film. Numerous other aspects are provided.

Abstract: Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

Abstract: A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode.

Abstract: Methods in accordance with this invention form a microelectronic structure by forming a carbon nano-tube (“CNT”) layer, and forming a carbon layer (“carbon liner”) above the CNT layer, wherein the carbon liner comprises: (1) a first portion disposed above and in contact with the CNT layer; and/or (2) a second portion disposed in and/or around one or more carbon nano-tubes in the CNT layer. Numerous other aspects are provided.

Abstract: The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or three-dimensional memory arrays.

Abstract: A forced cooling circulation system for drilling mud, which includes a refrigeration unit (1), a secondary refrigerant tank (4), a coaxial convection heat exchanger (12) for mud and a mud pond (17), is disclosed. The refrigeration unit (1) is in connection with the secondary refrigerant tank (4) and the coaxial convection heat exchanger (12) for mud via a pump (2), and the coaxial convection heat exchanger (12) for mud is in connection with the mud pond (17) via a pump (15) and pipelines. Heat exchange tubes of the coaxial convection heat exchanger (12) for mud are disposed as a double-layer structure or a multi-layer structure, and the inner heat exchange tubes (23) are mounted inside of the outer heat exchange tubes (25). The secondary refrigerant or the mud is circulated in the annular space between the inner heat exchange tubes (23) and the outer heat exchange tubes (25), and the mud or the secondary refrigerant is circulated in the inner tubes (23).

Abstract: Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the memory element, but not the steering element, to form multiple memory cells that share a single steering element. Memory cells formed from such methods, as well as numerous other aspects are also disclosed.