Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A method performed by a BS for CHO is provided. The method includes transmitting a CHO command to a UE, the CHO command including a CHO command ID and a measurement ID associated with the CHO command ID; causing the UE to execute the CHO command to handover to a target BS when a trigger condition associated with the measurement ID is fulfilled; causing the UE to forgo transmitting the measurement report during the execution of the CHO command despite the UE being configured, via a report configuration associated with the measurement ID, to transmit the measurement report; transmitting, to the UE, a message that causes the UE to remove the CHO command; and after transmitting the message to the UE, determining that the report configuration is removed by the UE without transmitting, to the UE, an instruction to remove the report configuration.

Abstract: In some examples, an electronic device includes an image sensor to capture a source image. In some examples, the electronic device includes a processor to determine, in the source image, a first region that depicts a first person and a second region that depicts a second person. In some examples, the processor is to, in response to determining that the first person is further away than the second person relative to the image sensor based on the first region and the second region, generate a first focus cell that depicts the first person alone. In some examples, the processor is to generate a macro view of the source image that depicts the first person and the second person. In some examples, the processor is to instruct display of a compound image including the macro view and the first focus cell.

Abstract: In some examples, an electronic device includes an image sensor to capture a source image. In some examples, the electronic device includes a processor to determine, in the source image, a first region that depicts a first person and a second region that depicts a second person. In some examples, the processor is to, in response to determining that the first person is further away than the second person relative to the image sensor based on the first region and the second region, generate a first focus cell that depicts the first person alone. In some examples, the processor is to generate a macro view of the source image that depicts the first person and the second person. In some examples, the processor is to instruct display of a compound image including the macro view and the first focus cell.

Abstract: An example non-transitory machine-readable storage medium includes instructions to, when executed by the processor, identify an object depicted in a video scene, wherein the video scene is displayed in a graphical user interface (GUI). The example instructions are executable to 1) identify coordinates of the object depicted in the video scene, wherein the coordinates are relative to the GUI and 2) identify coordinates of an inset window which is smaller than the GUI and overlaps the video scene. The example instructions are executable to compare the coordinates of the object with the coordinates of the inset window to determine an overlap of the inset window with the object. Responsive to an identified overlap of the inset window and the object, the instructions are executable to alter a display characteristic of the inset window to avoid the overlap of the inset window with the object.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.

Abstract: A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.

Abstract: An example non-transitory machine-readable storage medium includes instructions to, when executed by the processor, identify an object depicted in a video scene, wherein the video scene is displayed in a graphical user interface (GUI). The example instructions are executable to 1) identify coordinates of the object depicted in the video scene, wherein the coordinates are relative to the GUI and 2) identify coordinates of an inset window which is smaller than the GUI and overlaps the video scene. The example instructions are executable to compare the coordinates of the object with the coordinates of the inset window to determine an overlap of the inset window with the object. Responsive to an identified overlap of the inset window and the object, the instructions are executable to alter a display characteristic of the inset window to avoid the overlap of the inset window with the object.

Abstract: An example computing device includes: a display to display a color calibration pattern; a touchpad to receive input for the computing device, the touchpad having a reflective layer to reflect the color calibration pattern; a color sensor to detect the reflected color calibration pattern from the touchpad; a processor interconnected with the color sensor and the display, the processor to calibrate a color output of the display based on the color calibration pattern detected at the color sensor.

Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: In one example, an electronic device may include a touch panel defining an input surface having an input region and a display panel disposed below the touch panel. The display panel may visualize a virtual keyboard including a set of virtual keys. Further, the electronic device may include a haptic array module disposed below the display panel. The haptic array module may include a first actuator disposed below the input region corresponding to a first virtual key of the set of virtual keys. Further, the electronic device may include a controller in communication with the haptic array module to trigger the first actuator to generate a haptic output at the input region in response to an activation of the virtual keyboard.

Abstract: The present subject matter relates to self-healing keyboards. In an example implementation, a self-healing keyboard of an electronic device comprises a self-healing film having a self-healing layer disposed over a keyboard. The self-healing layer is composed of polyurethane, epoxy vinyl ester, epoxy, polyurethane microcapsules filled with silane compound, and a polysiloxane mixture.

Abstract: In one example, a keyboard device may include a base plate, a pivoting support fixedly disposed on the base plate and having a recess portion, a key cap support having a shaft portion rotatably received in the recess portion, a rolling element disposed between the shaft portion and the pivoting support, and a key cap assembled to the key cap support.

Abstract: Techniques for proving haptic feedback in computing systems are described. In operation, an input representing utilisation parameters of an electronic pen is received. In an example, the electronic pen may be electronically coupled to the computing system. Based on the received utilisation parameters, the computing system provides a pattern of haptic feedback to the user.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: In one example, a keyboard device may include a base plate, a pivoting support fixedly disposed on the base plate and having a recess portion, a key cap support having a shaft portion rotatably received in the recess portion, a rolling element disposed between the shaft portion and the pivoting support, and a key cap assembled to the key cap support.