Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: An exemplary structure for the fin field effect transistor comprises a substrate comprising a major surface; a plurality of fin structures protruding from the major surface of the substrate, wherein each fin structure comprises an upper portion and a lower portion separated at a transition location at where the sidewall of the fin structure is at an angle of 85 degrees to the major surface of the substrate, wherein the upper portion has sidewalls that are substantially perpendicular to the major surface of the substrate and a top surface having a first width, wherein the lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width; and a plurality of isolation structures between the fin structures, wherein each isolation structure extends from the major surface of the substrate to a point above the transition location.

Abstract: An embodiment is an integrated circuit structure including two insulation regions over a substrate with one of the two insulation regions including a void, at least a bottom surface of the void being defined by the one of the two insulation regions. The integrated circuit structure further includes a first semiconductor strip between and adjoining the two insulation regions, where the first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions, a gate dielectric over a top surface and sidewalls of the fin, and a gate electrode over the gate dielectric.

Abstract: An embodiment is an integrated circuit structure including two insulation regions over a substrate with one of the two insulation regions including a void, at least a bottom surface of the void being defined by the one of the two insulation regions. The integrated circuit structure further includes a first semiconductor strip between and adjoining the two insulation regions, where the first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions, a gate dielectric over a top surface and sidewalls of the fin, and a gate electrode over the gate dielectric.

Abstract: A method of fabricating a fin field effect transistor (FinFET) including forming a first insulation region and a second insulation region and fin there between. The method further includes forming a gate stack over a portion of the fin and over a portion of the first and second insulation regions. The method further includes tapering the top surfaces of the first and second insulation regions not covered by the gate stack.

Abstract: A method of fabricating a fin field effect transistor (FinFET) including forming a first insulation region and a second insulation region and fin there between. The method further includes forming a gate stack over a portion of the fin and over a portion of the first and second insulation regions. The method further includes tapering the top surfaces of the first and second insulation regions not covered by the gate stack.

Abstract: A computer implemented method for forming an integrated circuit (IC) layout is presented. The method includes forming a constraint tree when a computer is invoked to receive a first layout of the IC and generating a second layout of the IC in accordance with the constraint tree.

Abstract: An electronic device comprises a main body, a plurality of I/O interfaces, and an ejecting apparatus. The ejecting apparatus is mounted on the main body and comprises an enclosure, a supporting member received in the enclosure, a carrier secured on the supporting member to support the I/O interfaces, a first driving unit, and a second driving unit. The first driving unit drives the carrier to slide along a first direction, and the second driving unit drives the carrier to slide along a second direction opposite to the first direction. When the I/O interfaces are exposed out of the enclosure, the first force is larger than the second force. When the carrier is operated to slide to a position where the second force is larger than the first force, the I/O interfaces are driven to be received in the enclosure.

Abstract: A method includes forming a gate structure on a semiconductor material region, wherein the gate structure includes spacer elements abutting a gate electrode layer. The gate electrode layer is etched to provide a recess. A hard mask layer is formed over the gate electrode layer in the recess. Silicide layers are then formed on a source region and a drain region disposed in the semiconductor material region, while the hard mask is disposed over the gate electrode layer. A source contact and a drain contact is then provided, each source and drain contact being conductively coupled to a respective one of the silicide layers.

Abstract: An embodiment is an integrated circuit structure including two insulation regions over a substrate with one of the two insulation regions including a void, at least a bottom surface of the void being defined by the one of the two insulation regions. The integrated circuit structure further includes a first semiconductor strip between and adjoining the two insulation regions, where the first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions, a gate dielectric over a top surface and sidewalls of the fin, and a gate electrode over the gate dielectric.

Abstract: A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region.

Abstract: An embodiment is an integrated circuit structure including two insulation regions over a substrate with one of the two insulation regions including a void, at least a bottom surface of the void being defined by the one of the two insulation regions. The integrated circuit structure further includes a first semiconductor strip between and adjoining the two insulation regions, where the first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions, a gate dielectric over a top surface and sidewalls of the fin, and a gate electrode over the gate dielectric.

Abstract: A computer implemented method for routing preservation is presented. The method includes decomposing, using the computer, a geometric relationship between a first module, a second module, and a routing path of a source layout, when the computer is invoked to route the solution path. The method further includes disposing, using the computer, the routing path in a solution layout in accordance with the geometric relationship. The solution layout is not defined by a scaling of the source layout.

Abstract: A connector assembly has a plug and socket; the plug includes an insulative body, at least one first power contact, at least one second power contact and a metal shield. The insulative body has a base portion and a tongue portion extending from the base portion. The tongue portion includes a plurality of power contact grooves and penetrates through the base portion, and at least one first convex portion defined in a periphery of the tongue portion. The first power contact and the second power contact are respectively formed on the power contact grooves of the insulative body for connection to a power source in a socket of host device. The metal shield encloses the tongue portion of the insulative body to cover the tongue portion. Consequently, the charging speed can be increased, reducing charging time.

Abstract: A pivot mechanism rotatably coupes a cover to a base of a foldable electronic device. The pivot mechanism includes a connector, a first rotation assembly, and a second rotation assembly. The first rotation assembly is rotatably coupled to the base and fixedly attached to the connector. The second rotation assembly is fixedly coupled to the cover and rotatably coupled to the connector. The first rotation assembly rotates relative to the base and the second rotation assembly remains fixed relative to the connector as the cover is rotated open to a first angle,. The second rotation assembly rotates relative to the connector as the cover is rotated further to a second angle.

Abstract: A three-dimensional integrated circuit, including a first adhesive bonding layer, a first chip, a second chip, and an inter-stratum thermal pad, is provided. The first adhesive bonding layer has a first surface and a second surface opposite to each other. The first chip is disposed on the first surface of the first adhesive bonding layer. The first chip includes a hot zone. The second chip is disposed on the second surface of the first adhesive bonding layer. The inter-stratum thermal pad is embedded in the first adhesive bonding layer and faces to the hot zone.

Abstract: A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region.

Abstract: An electronic device comprises a main body, a plurality of I/O interfaces, and an ejecting apparatus. The ejecting apparatus is mounted on the main body and comprises an enclosure, a supporting member received in the enclosure, a carrier secured on the supporting member to support the I/O interfaces, a first driving unit, and a second driving unit. The first driving unit drives the carrier to slide along a first direction, and the second driving unit drives the carrier to slide along a second direction opposite to the first direction. When the I/O interfaces are exposed out of the enclosure, the first force is larger than the second force. When the carrier is operated to slide to a position where the second force is larger than the first force, the I/O interfaces are driven to be received in the enclosure.

Abstract: An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first k value. A semiconductor strip is between and adjoining the two insulation regions, with a top portion of the semiconductor strip forming a semiconductor fin over top surfaces of the two insulation regions. An additional insulation region is in the second device region and over the substrate. The additional insulation region includes a second dielectric material having a second k value greater than the first k value.

Abstract: An embodiment is an integrated circuit structure including two insulation regions over a substrate with one of the two insulation regions including a void, at least a bottom surface of the void being defined by the one of the two insulation regions. The integrated circuit structure further includes a first semiconductor strip between and adjoining the two insulation regions, where the first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions, a gate dielectric over a top surface and sidewalls of the fin, and a gate electrode over the gate dielectric.