Abstract: The invention provides a high thermal conductivity fluororesin composition and products thereof. The high thermal conductivity fluororesin composition includes a polytetrafluoroethylene resin, a fluorine-containing copolymer, spherical inorganic fillers and impregnation aids.

Abstract: A composite material substrate includes an inorganic filler, a resin composition, and a dispersant. The resin composition includes a bismaleimide resin, a naphthalene ring-containing epoxy resin, and a benzoxazine resin. The inorganic filler, the resin composition, and the dispersant are mixed together.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.

Abstract: A resin composition includes resin and inorganic filler. The resin includes liquid rubber resin, polyphenylene ether resin, and a crosslinking agent. Compared to a total of 100 parts by mass of the resin, the usage amount of the inorganic filler is at least greater than or equal to 40 parts by mass.

Abstract: A semiconductor chip includes a physical layer and a processing circuit. The physical layer includes an input/output circuit, at least one sequence checking circuit and at least one signal transmission path, wherein the at least one sequence checking circuit is configured to generate at least one test result signal according to a clock signal transmitted through the input/output circuit and at least one test data signal transmitted through the at least one signal transmission path. The processing circuit is electrically coupled to the physical layer and is configured to determine an operation status of the at least one signal transmission path according to a voltage level of the at least one test result signal.

Abstract: A powder composition includes a first powder, a second powder, and a modified functional group. A particle size range of the first powder is between 1 micron and 100 microns. The second powder and the modified functional group are modified on the first powder. A particle size range of the second powder is between 10 nanometers and 1 micron. A manufacturing method of a powder composition is also provided.

Abstract: An access point (AP) and a station (STA) communicate with each other, with the AP indicating to the STA either or both of a preamble detection (PD) channel and a signaling (SIG) content channel and with the STA being initially monitoring a primary frequency segment of a plurality of frequency segments in an operating bandwidth of the AP. A downlink (DL) or triggered uplink (UL) communication is performed between the AP and the STA during a transmission opportunity (TXOP) such that: (i) during the TXOP, the STA monitors a preamble on the PD channel and decodes a SIG content on the SIG content channel; and (ii) after an end of the TXOP, the STA switches to the primary frequency segment.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: A rubber resin material with high dielectric constant and a metal substrate with high dielectric constant are provided. The rubber resin material with high dielectric constant includes a rubber resin composition with high dielectric constant and inorganic fillers. The rubber resin composition with high dielectric constant includes: 40 wt % to 70 wt % of a liquid rubber, 10 wt % to 30 wt % of a polyphenylene ether resin, and 20 wt % to 40 wt % of a crosslinker. A molecular weight of the liquid rubber ranges from 800 g/mol to 6000 g/mol. A dielectric constant of the rubber resin material with high dielectric constant is higher than or equal to 2.0.

Abstract: An interface device and a signal transceiving method thereof are provided. The interface device includes a slave circuit and a master circuit. The slave circuit is coupled to the master circuit and includes a first programmable delay line, a first output clock generator, and a first phase detector. The first programmable delay line provides a first adjusting delay amount according to a first adjust signal, and generates a first delayed clock signal by delaying a first clock signal according to the first adjusting delay amount. The first output clock generator generates a second clock signal according to the first delayed clock signal. The first phase detector detects a phase difference of the first clock signal and the second clock signal to generate first phase lead or lag information. The first adjust signal is generated according to the first phase lead or lag information.

Abstract: Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.

Abstract: Provided herein are methods, systems, kits, and compositions useful for determining small molecule-protein interactions and protein-protein interactions. The photo-click tags provided herein can be conjugated to a small molecule or amino acid analog to provide compounds that can be integrated into a protein through photo-conjugation, allowing for identification of a small molecule-protein interaction or protein-protein interaction to elucidate the small molecules mechanism of action or the protein targeted by the small molecule. In some embodiments, the photo-click tags comprise a photo-conjugation moiety and a click chemistry handle, allowing for the attachment of various functional groups (e.g., affinity tags) to the small molecule or amino acid analog.

Abstract: A fluoride-based resin prepreg and a circuit substrate using the same are provided. The fluoride-based resin prepreg includes 100 PHR of a fluoride-based resin and 20 to 110 PHR of an inorganic filler. Based on a total weight of the fluoride-based resin, the fluoride-based resin includes 10 to 80 wt % of polytetrafluoroethylene (PTFE), 10 to 50 wt % of fluorinated ethylene propylene (FEP), and 0.1 to 40 wt % of perfluoroalkoxy alkane (PFA). The circuit substrate includes a fluoride-based resin substrate and a circuit layer that is formed on the fluoride-based resin substrate.

Abstract: An audio processing method includes the following operations. A calculated value is obtained according to multiple audio clock frequency information contained in multiple audio input packets. An audio sampling frequency is generated according to the calculated value and a link symbol clock signal. Multiple audio output packets corresponding to the audio input packets are generated according to the audio sampling frequency.

Abstract: A prepreg and a metallic clad laminate are provided. The prepreg includes a reinforcing material and a thermosetting resin layer. The thermosetting resin layer is formed by immersing the reinforcing material in a thermosetting resin composition. The thermosetting resin composition includes a polyphenylene ether resin, a liquid polybutadiene resin, a crosslinker, and fillers. Based on a total weight of the thermosetting resin composition being 100 phr, an amount of the fillers ranges from 50 phr to 70 phr. The fillers include a granular dielectric filler and a flaky thermal conductive filler. The metallic clad laminate is formed by disposing at least one metal layer onto the prepreg.

Abstract: An interface device and a signal transceiving method thereof are provided. The interface device includes a master circuit and a slave circuit. The slave circuit includes a second receiver, a clock generator, a sampler, and a comparator. The first receiver and second receiver respectively receive input data and a clock signal from the master circuit. The clock generator delays the clock signal according to a delay value to generate a delayed clock signal, and generates a plurality of sampling signals according to the delayed clock signal. The sampler samples the input data according to the sampling signals to generate a plurality of sampling results. The comparator compares the sampling results to generate a comparison result. The clock generator adjusts the delay value according to the comparison result.

Abstract: An interposer routing structure includes a first trace layer, a bump layer, a second trace layer and a third trace layer. The first trace layer is configured to receive a power. The bump layer is coupled to a die. The second trace layer and the third trace layer are coupled between the first trace layer and the bump layer, and include multiple ground traces and multiple power traces. The ground traces are located on both sides of at least one of the power traces, so that the ground traces isolate the at least one power trace and multiple signal traces. The power traces of the second trace layer are coupled to each other by a connecting power trace, and the ground traces of the third trace layer are coupled to each other by a connecting ground trace.

Abstract: A low-dielectric rubber resin material and a low-dielectric metal substrate are provided. The rubber resin material includes a low-dielectric rubber resin composition and inorganic fillers. The low-dielectric rubber resin composition includes: 5 wt % to 40 wt % of a liquid rubber, 20 wt % to 70 wt % of a polyphenylene ether resin, 5 wt % to 30 wt % of a bismaleimide resin, and 20 wt % to 45 wt % of a crosslinker. A molecular weight of the liquid rubber ranges from 800 g/mol to 6000 g/mol. An iodine value of the liquid rubber ranges from 30 g/100 g to 60 g/100 g.