Abstract: This application discloses a foldable terminal and a screen-on control method for the foldable terminal, and pertains to the field of electronic device technologies. The foldable terminal includes a body, a display component, a processor, and a covering detection sensor. The body includes a first body part and a second body part that are connected in a foldable connection manner, the display component includes two display parts. The covering detection sensor is configured to detect whether the first body part is covered with a terminal protective case. The processor is configured to: if the covering detection sensor detects that the first body part is not covered with the terminal protective case, control a to-be-used display part to be completely or partially on. According to this application, a technical problem in the related art that a process of operating a foldable terminal is complex and inefficient can be effectively resolved.

Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.

Abstract: A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.

Abstract: A method of making a semiconductor device that includes forming a dielectric stack over a substrate and patterning a contact region in the dielectric stack, the contact region having side portions and a bottom portion that exposes the substrate. The method also includes forming a dielectric barrier layer in the contact region to cover the side portions and forming a conductive blocking layer to cover the dielectric barrier layer, the dielectric stack, and the bottom portion of the contact region. The method can include forming a conductive layer over the conductive blocking layer and forming a conductive barrier layer over the conductive layer. The method can further include forming a silicide region in the substrate beneath the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.

Abstract: A temperature-controllable engine fuel supply device is used to feed fuel into a fuel inlet (40) of an engine (40). The temperature-controllable engine fuel supply device includes a fuel tank (1) for receiving the fuel, a cooling unit (2) and a nozzle (3). The cooling unit (2) communicates with the fuel tank (1) to cool the fuel. The nozzle (3) is disposed corresponding to the fuel inlet (40) to jet the fuel toward the fuel inlet (40). A cooling path (P) through which the fuel passes is from the cooling unit (2), through the nozzle (3), to the fuel inlet (40). A temperature sensor (21), (23) is installed on the cooling path (P) to detect temperature of the fuel, so temperature of the fuel is controlled to be within an ideal range before the fuel enters the engine (4).

Abstract: A rotary object driving and power generating system has a motor for driving a transversal rod, and then the transversal rod drives supporting rods which further drive the eccentric rotation device. The eccentric rotation device further drives a lower shaft so as to drive the power generator to generate electric power. Therefore power not used in the eccentric rotation device may be saved to drive the power generator to generate electric power and the electric power can be fed back to drive the eccentric rotation device so as to achieve the object of power saving.

Abstract: A temperature-controllable engine fuel supply device is used to feed fuel into a fuel inlet (40) of an engine (40). The temperature-controllable engine fuel supply device includes a fuel tank (1) for receiving the fuel, a cooling unit (2) and a nozzle (3). The cooling unit (2) communicates with the fuel tank (1) to cool the fuel. The nozzle (3) is disposed corresponding to the fuel inlet (40) to jet the fuel toward the fuel inlet (40). A cooling path (P) through which the fuel passes is from the cooling unit (2), through the nozzle (3), to the fuel inlet (40). A temperature sensor (21), (23) is installed on the cooling path (P) to detect temperature of the fuel, so temperature of the fuel is controlled to be within an ideal range before the fuel enters the engine (4).

Abstract: A flexible keyboard cover film and a control process of the flexible keyboard cover film are provided. The flexible keyboard cover film allows a user to perform a touch function and is suitable for covering a keyboard of a computer, and the flexible keyboard cover film includes a flexible transparent base material, a touch device, and an input/output (I/O) interface. The flexible transparent base material covers the keyboard. The touch device is located on the flexible transparent base material and is electrically connected to the computer through the I/O interface.

Abstract: A touch sensing device including a substrate, a plurality of first sensing series separated from each other and a plurality of second sensing series separated from each other is provided. The substrate has a first surface and a second surface. The first sensing series are disposed on the first surface. Each of the first sensing series includes a plurality of first sensing pads connected to each other. The second sensing series are disposed on the first surface. Each of the second sensing series includes a plurality of second sensing pads distributed between the first sensing series and a plurality of connection lines connecting the second sensing pads. Each of the connection lines extends along an edge of one of the first sensing series, and each of the connection lines is electrically connected to the second sensing pads located at two opposite sides of the first sensing series.

Abstract: A digital to analog converter with output impedance compensation has an encoding unit, a current cell array, a summing unit and a compensation unit. The compensation unit is connected to output terminals of the DAC and provides a nonlinear impedance to compensate an original output impedance of the DAC. With the compensated output impedance, the SFDR performance and the linearity of the DAC are improved to obtain a superior input-to-output transfer curve.

Abstract: A touch sensing device including a substrate, a plurality of first sensing series separated from each other and a plurality of second sensing series separated from each other is provided. The substrate has a first surface and a second surface. The first sensing series are disposed on the first surface. Each of the first sensing series includes a plurality of first sensing pads connected to each other. The second sensing series are disposed on the first surface. Each of the second sensing series includes a plurality of second sensing pads distributed between the first sensing series and a plurality of connection lines connecting the second sensing pads. Each of the connection lines extends along an edge of one of the first sensing series, and each of the connection lines is electrically connected to the second sensing pads located at two opposite sides of the first sensing series.

Abstract: A digital to analog converter with output impedance compensation has an encoding unit, a current cell array, a summing unit and a compensation unit. The compensation unit is connected to output terminals of the DAC and provides a nonlinear impedance to compensate an original output impedance of the DAC. With the compensated output impedance, the SFDR performance and the linearity of the DAC are improved to obtain a superior input-to-output transfer curve.