Abstract: An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming the conductive film using a vapor deposition process with a reaction gas comprising fluorine. In the case of a gate stack, the transition metal boride layer can help reduce or eliminate the diffusion of fluorine atoms from the conductive film into a gate dielectric layer. Similarly, in the case of digit line stacks as well as gate stacks, the transition metal boride layer can reduce the diffusion of silicon from the polysilicon layer into the conductive film to help maintain a low resistance for the conductive film.

Abstract: The invention encompasses methods of processing internal surfaces of a chemical vapor deposition reactor. In one implementation, material is deposited over internal surfaces of a chemical vapor deposition reactor while processing semiconductor substrates therein. The deposited material is treated with atomic oxygen. After the treating, at least some of the deposited material is etched from the reactor internal surfaces. In one embodiment, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, remaining deposited material is treated with atomic oxygen. After the treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces. In one embodiment, the deposited material is first treated with atomic oxygen. After the first treating, first etching is conducted of some of the deposited material from the reactor internal surfaces.

Abstract: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

Abstract: Titanium boride (TiBx), zirconium boride (ZrBx) and hafnium boride (HfBx) barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The barriers protect cell dielectrics from diffusion and other interaction with surrounding materials during subsequent thermal processing.

Abstract: A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

Abstract: A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

Abstract: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

Abstract: A high surface area capacitor comprising a double metal layer of an electrode metal and a barrier material deposited on hemispherical grain (HSG) silicon and a high dielectric constant (HDC) material deposited over the double metal layer. An upper cell plate electrode is deposited over the HDC material. The double metal layer preferably comprises one noble metal for the electrode metal and an oxidizable metal for the barrier material. The noble metal alone would normally allow oxygen to diffuse into and oxidize any adhesion layer and/or undesirably oxidize any silicon-containing material during the deposition of the HDC material. The barrier metal is used to form a conducting oxide layer or a conducting layer which stops the oxygen diffusion. The HSG polysilicon provides a surface roughness that boosts cell capacitance. The HDC material is also used to boost cell capacitance.

Abstract: A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.

Abstract: A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

Abstract: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

Abstract: Titanium boride (TiBx), zirconium boride (ZrBx) and hafnium boride (HfBx) barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The barriers protect cell dielectrics from diffusion and other interaction with surrounding materials during subsequent thermal processing.

Abstract: Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor includes a capacitor dielectric layer including Ta2O5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta2O5 capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta2O5 in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode includes a conductive metal oxide. A more preferred second capacitor electrode includes a conductive silicon including layer, over a conductive titanium including layer, over a conductive metal oxide layer. A preferred first capacitor electrode includes a conductively doped Si—Ge alloy. Preferably, a Si3N4 layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.

Abstract: A high surface area capacitor comprising a double metal layer (an electrode metal and barrier material) deposited on hemispherical grain (HSG) silicon, wherein a high dielectric constant (HDC) material is deposited over the double metal layer. The high surface area capacitor is complete with an upper cell plate electrode deposited over the HDC material. The double metal layer preferably comprises one noble metal, such as platinum or palladium, for the electrode metal and an oxidizable metal, such as ruthenium, iridium, or molybdenum, for the barrier material. The noble metal, such as platinum metal, alone would normally allow oxygen to diffuse into and oxidize any adhesion layer (making the adhesion layer less conductive) and/or undesirably oxidize any silicon-containing material during the deposition of the HDC material. Thus, the barrier metal is used to form a conducting oxide layer or a conducting layer which stops the oxygen diffusion.

Abstract: A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.

Abstract: An integrated capacitor is provided, incorporating a high dielectric constant material. In a disclosed method, a high k capacitor dielectric is formed in the shape of a container above a protective layer. After the dielectric is formed, inner and outer electrodes are formed, representing storage and reference electrodes of a memory cell. Contact is separately made through the protective layer from a storage electrode layer, which lines the inner surface of the dielectric, to an underlying polysilicon plug. The contact can be a thin layer lining the interior of the storage electrode layer, or can completely fill the container capacitor. In the latter instance, the contact can form part of the storage electrode and contribute to capacitance of the cell. Volatile dielectric materials can thus be formed prior to the electrodes, avoiding oxidation of the electrodes and underlying polysilicon plug, while also minimizing oxygen depletion through diffusion from the high dielectric constant material.

Abstract: The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric region positioned therebetween. The high k capacitor dielectric region includes a layer of metal oxide having multiple different metals bonded with oxygen. The layer has varying stoichiometry across its thickness. The layer includes an inner region, a middle region, and an outer region. The middle region has a different stoichiometry than both the inner and outer regions.

Abstract: Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta2O5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta2O5 capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta2O5 in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode comprises a conductive metal oxide. A more preferred second capacitor electrode comprises a conductive silicon comprising layer, over a conductive titanium comprising layer, over a conductive metal oxide layer. A preferred first capacitor electrode comprises a conductively doped Si—Ge alloy. Preferably, a Si3N4 layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.

Abstract: A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.

Abstract: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.