Abstract: A resist composition comprising:

Abstract: A positive resist composition of the present invention achieving significant performance improvements in high energy-beam lithography, which comprises a phenolic polymer having a property of being insoluble or hardly soluble in an aqueous alkali solution and becoming soluble in an aqueous alkali solution by the action of an acid, in which the phenolic polymer includes a repeating unit containing at least one selected from the group consisting of an acetal-protected phenolic hydroxyl group, a ketal-protected phenolic hydroxyl group, a tertiary ester-protected carboxyl group and a tetrahydropyranyl-protected carboxyl group; and a compound having a phenacylsulfonium structure and capable of generating an acid upon irradiation with one of actinic rays and radiation.

Abstract: The resist composition of the present invention, ensuring excellent pattern profile and excellent isolation performance for use in the pattern formation by the irradiation of actinic rays or radiation, particularly, electron beam, X ray or EUV light, which comprising (A) a compound having a specific partial structure and a counter ion, the compound generating an acid upon irradiation of actinic rays or radiation.

Abstract: A resist composition for an electron beam, EUV or X-ray comprising (A1) a compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation.

Abstract: A negative resist composition comprising: (A) a compound capable of generating an acid on exposure to active light or a radiation; (B) a resin soluble in an aqueous alkali solution; (C) a compound having an alcohol structure which is excited by the acid generated by the component (A) to reduce an alkali solubility of a resist film formed of the negative resist composition; (D) a crosslinking agent which is excited by the acid generated by the component (A) to induce a crosslinking reaction; and (E) a solvent.