Abstract: Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

Abstract: Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

Abstract: An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

Abstract: An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract: Improved slope efficiency in a VCSEL can be accomplished by selecting particular mirror layer compositions and/or mirror layer configurations that minimize increased reflectivity in the top mirror and/or maximize increased reflectivity of the bottom mirror with increasing temperature. Improved reflectivity of the bottom mirror compared to the top mirror over a desired operating temperature range can be facilitated by (i) selecting mirror pairs for the bottom and/or top mirror that gives the bottom mirror pairs a greater increase in contrast ratio with increasing temperature compared to the top-mirror pairs, and/or (ii) including fewer mirror pairs in the bottom mirror than the number of mirror pairs that would give optimal reflectivity.

Abstract: Improved slope efficiency in a VCSEL can be accomplished by selecting particular mirror layer compositions and/or mirror layer configurations that minimize increased reflectivity in the top mirror and/or maximize increased reflectivity of the bottom mirror with increasing temperature. Improved reflectivity of the bottom mirror compared to the top mirror over a desired operating temperature range can be facilitated by (i) selecting mirror pairs for the bottom and/or top mirror that gives the bottom mirror pairs a greater increase in contrast ratio with increasing temperature compared to the top-mirror pairs, and/or (ii) including fewer mirror pairs in the bottom mirror than the number of mirror pairs that would give optimal reflectivity.

Abstract: The present invention discloses systems and methods for defining a coupling region or regions for use with optical systems. An embodiment of the coupling region represents a region in which an optical parameter meets or exceeds a selected threshold value. Embodiments of the coupling region may be used for the alignment, characterization, qualification, or design of optical elements or optical assemblies.

Abstract: Methods and apparatus for monitoring the power level of one or more optical emitters are provided. In some embodiments, optical signals from two or more optical emitters are directed at different regions of a photo detector. The photo detector may include two or more spaced contacts that are adapted to receive different contributions of photo current from each of the optical signals. By monitoring the photo currents in the two or more spaced contacts, a measure of the optical power of each of the optical signals may be determined.

Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract: A system and method for aligning optical components based on coupled optical power and encircled flux is described. In one embodiment of the invention, coupled power and encircled flux is measured corresponding to multiple locations of a first optical component relative to a second optical element. The measured coupled power and encircled flux values are analyzed and an appropriate location of the first optical component relative to the second optical component is selected.

Abstract: Digital optical networks for communication between digital consumer electronic devices are disclosed. A digital optical network can include an input interface configured to electrically couple to a DVI or HDMI receptacle of a source device. The input interface includes an optical transmitter for converting a TMDS signal into an optical signal. An input optical fiber optically coupled to the optical transmitter receives the optical signal. A coupler is coupled to the input optical fiber and couples the optical signal with at least one of multiple output optical fibers coupled to the coupler. Output interfaces each include an optical transmitter for converting the optical signal back into the electrical TMDS signal. The output interfaces are configured to electrically couple the TMDS signals with respective DVI or HDMI receptacles of DVI or HDMI sink devices.

Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract: A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.

Abstract: Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control can be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) are defined by trenches (1725) that operate as nonconductive areas (1750). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.

Abstract: Simplified laser drivers for closed path digital optical cables and digital optical cables including the simplified laser drivers. The laser driver can include less transistors than conventional laser drivers for optical communication cables. The laser can include a bias source and modulation source. The bias source can have a single constant current bias point for all laser diodes. The modulation current source can have a single temperature coefficient for all laser diodes. The laser driver can exclude, for example, any one of or combination of temperature compensation of the modulation or bias current sources, external programming of the modulation or bias current sources, power control based on output of the laser diode, and/or control based on feedback received from a monitor device or other sensor within the cables.

Abstract: A monolithically formed laser and photodiode. The monolithically formed laser and photodiode includes a Vertical Cavity Surface Emitting Laser (VCSEL) that includes a first PN junction. The first PN junction includes a first p layer and a first n layer. A tunnel diode is connected to the VCSEL both physically and electronically through a wafer fabrication process. A photodiode is connected to the tunnel diode. The photodiode is connected to the tunnel diode by physical and electronic connections. The tunnel diode and photodiode may share some common layers. The tunnel diode includes a second PN junction. The monolithically formed laser and photodiode allow for an integrated structure with diode biasing flexibility including the use of a single supply to bias both the laser and photodiodes.

Abstract: AC and/or DC testing of an optoelectronic device at the wafer level. In one example embodiment, a method of testing one or more devices at a wafer level includes generating a test signal; supplying the test signal to a single device on a wafer; providing an output of the single device to each of a plurality of devices on the wafer by way of a common electrical connection between the single device and the plurality of devices; providing an output of each of the plurality of devices to a corresponding return connection by way of electrical connections between the plurality of devices and the plurality of return connections; and receiving return currents from each of the return connections.

Abstract: The present invention discloses systems and methods for defining a coupling region or regions for use with optical systems. An embodiment of the coupling region represents a region in which an optical parameter meets or exceeds a selected threshold value. Embodiments of the coupling region may be used for the alignment, characterization, qualification, or design of optical elements or optical assemblies.

Abstract: A system and method for aligning optical components based on coupled optical power and encircled flux is described. In one embodiment of the invention, coupled power and encircled flux is measured corresponding to multiple locations of a first optical component relative to a second optical element. The measured coupled power and encircled flux values are analyzed and an appropriate location of the first optical component relative to the second optical component is selected.