Abstract: Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.

Abstract: The present invention relates to controlling parameters of an optical output of an optical transmitter. An optical package can be selected based on a level of attenuation of a parameter of a transmitter output by the optical package. The laser and the optical package can be assembled and a parameter of the transmitter output can be measured. An optical barrel can be selected based on the measurement, wherein the optical barrel is selected based on an attenuation level to satisfy a range of a desired parameter value. The optical package and the optical barrel can be assembled. A system for assembling the optical device is also described.

Abstract: A polarization pinned vertical cavity surface emitting laser (VCSEL). A VCSEL designed to be polarization pinned includes an upper mirror. An active region is connected on the upper mirror. A lower mirror is connected to the active region. A grating layer is deposited to the upper mirror. The grating layer includes a low index of refraction layer formed by deposition on the upper mirror. The grating layer further includes a high index of refraction layer formed by deposition on the low index of refraction layer. A grating is formed into the grating layer.

Abstract: An optical device is disclosed that includes a chip containing a Vertical Cavity Surface Emitting Laser (VCSEL) active region that produces a laser beam on a first axis. The VCSEL can further include a post having a central axis offset a distance from the first axis. A lens can be mounted on the post such that it bends the laser beam away from the first axis. Alternately, the chip can include multiple VCSEL active regions each of which produces a laser beam on a different axis. The chip can include a post having a central axis offset from the laser beam axes. A lens can be mounted on the post such that the lens bends the laser beams away from the central axis.

Abstract: A method of performing eye safety measurements on laser devices is disclosed. The laser is contained within a housing having a central bore. The method uses an optical detector having at least two zones to make separate measurements of both a direct power coming from the laser and an indirect power reflected off of the central bore. The first zone measuring the direct power is smaller than the second zone measuring the indirect power. The measurement of the first power is then used to adjust the power of the laser to be within a specified optical standard, such as the class 1 standard. In one exemplary embodiment, the laser is an 850 nanometer Vertical Cavity Surface Emitting Laser (VCSEL).

Abstract: A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.

Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract: An electrostatic discharge (ESD) protected semiconductor device. The semiconductor device is formed as a monolithic structure. The monolithic structure includes a vertical cavity surface emitting laser (VCSEL) and a protection diode. The protection diode cathode is electrically coupled to the VCSEL anode and the protection diode anode is electrically coupled to the VCSEL cathode so as to provide ESD protection to the VCSEL.

Abstract: Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in.

Abstract: Digital electronic devices for optical communication of digital video and/or audio signals between a digital source device and a digital sink device. A digital source device includes a transition minimized differential signaling (TMDS) transmitter for receiving control and digital video signals from a source controller and for converting the control and digital video signals into electric TMDS signals. An interface receives a first end of an optical fiber. An optical transmitter converts the electric TMDS signals to at least one optical signal and transmits the at least one optical signal to the first end of the optical fiber. A digital sink device receives the at least one optical signal from a second end of the optical fiber and converts the optical signal into TMDS signals. A TMDS receiver converts the TMDS signals into control and digital video signals and transmits the control and digital video signals to the sink controller.

Abstract: An optical component with integrated back monitor photodiode. The optical component includes a substrate doped with a first type dopant, such as an n-type dopant. The substrate has a trench with sloped walls. An optical source is disposed in the trench. An implant of a second type dopant, such as a p-type dopant, is in the substrate around at a least a portion of the optical source. The implant in the substrate in combination with the first type dopant in the substrate forms a diode.

Abstract: Digital optical cables for communication between digital consumer electronic devices. The digital optical cable can include an optical fiber, a first interface configured to couple a digital source device to a first end of the optical fiber, the first interface can comprise an optical transmitter for receiving an electronic video signal from the digital source device, converting the electronic video signal to an optical signal, and for transmitting the optical signal onto the first end of the optical fiber. A second interface can be configured to couple a digital sink device to a second end of the optical fiber, the second interface comprising an optical receiver for receiving the optical signal transmitted by the optical transmitter from the second end of the optical fiber, converting the optical signal to an electronic video signal, and transmitting the electronic signal to the digital sink device.

Abstract: A vertical cavity surface emitting laser (VCSEL) operable as a signal emitter and a silicon photodetector adapted for receiving light signals co-mounted in a common canister. Also containable is a four lead header and an isolating ceramic spacer. The canister can be electrically connected to a first lead from the header. The isolating ceramic spacer is adapted for mounting of the VCSEL above the level of the photodetector within the can. The VCSEL is electrically connectable to a second and third lead from the header and the photodetector is electrically connectable to the second and a fourth lead from the header. Co-packaging of a VCSEL and photodetector in common device canisters can yield about a 20:1 contrast ratio between an object's presence in front of the sensing system. A small pattern necessary for high accuracy is provided by the system and no barrier is necessary between the emitter and detector.

Abstract: Methods, apparatuses, and systems for obtaining identification information about fiber optic components and optical assemblies in a non-invasive manner. The present invention further includes test devices for receiving a fluorescent emission having a predetermined spectral signature. The spectral signature provides identification information. The identification information can describe a characteristic of an optical communication component or assembly incorporating the optical communication component.

Abstract: Optical transmission components, systems, and packages where the package includes a common housing containing a laser for transmission of an optical signal, a photodetector optically coupled to the laser for monitoring the laser transmission, and a laser driver electrically coupled to the laser for providing a drive current to the laser. The optical package may be a TO-Can package, the laser may be a vertical cavity surface emitting laser (“VCSEL”), and the laser driver may be an AC modulation laser driver, where a bias current is supplied to the laser from external to the optical transmission component package. An external bias source may be used for providing a bias current to the laser. A temperature sensor located in the laser driver may be used to control operational parameters of the laser.

Abstract: Methods, apparatuses, and systems for obtaining identification information about fiber optic components and optical assemblies in a non-invasive manner. The present invention includes optical subassemblies (“OSAs”), and optical assemblies incorporating the OSAs where the OSAs comprise means, such as fluorescent material, for producing a fluorescent identification emission having a predetermined spectral signature that provides identification information describing the particular OSA, a component of the OSA, or the optical assembly. The present invention further includes methods for manufacturing fiber optic components to include fluorescent material providing identification information describing the fiber optic component.

Abstract: Super lattice structures in conjunction with a tunnel junction to provide an improved contact for multiple components. The tunnel junctions can include a first semiconductor material having a resistance parameter for conducting a current and a second semiconductor material having a resistance parameter that is more restrictive to conduction of a current than the resistance parameter of the first semiconductor material. The first semiconductor material can have a critical thickness at which lattice matching of the first semiconductor material causes dislocation. The second semiconductor material can have a critical thickness at which lattice matching of the second semiconductor material causes dislocation that is thicker than the critical thickness of the first semiconductor material. The tunnel junction can be used in a monolithically manufactured photo transmitter and receiver design.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.