Abstract: Techniques for operating an autonomous follower vehicle that is following a leader vehicle. A desired path to be traversed by the follower may be determined from a Leader Follower Relative Pose (LFRP) derived from sensor data. A pursuit pose is derived along the desired path from the present leader pose, such as either interpolating backward or forward. As a result, the pursuit distance no longer needs to be the same as the distance derived solely from the LFRP.

Abstract: Methods and apparatus that reduce demands on behavior of autonomous vehicles operating in a convoy, such as lane following or leader swap.

Abstract: Embodiments of the present invention include a convertible prosthesis that is capable of conversion from a humeral head replacement to a reverse reconstruction without any removal of parts integrated into the patient's bony anatomy (e.g. implant stems). A desired overall implant inclination angle may be achieved by matching various implant stems with various reverse inserts, thus permitting a resection surface to be matched with an implant stem selection while also permitting a desired overall implant inclination angle to be achieved through the selection of an appropriate insert.

Abstract: The present invention provides interconnects with self-forming wrap-all-around graphene barrier layer. In one aspect, a method of forming an interconnect structure is provided. The method includes: patterning at least one trench in a dielectric; forming an interconnect in the at least one trench embedded in the dielectric; and forming a wrap-all-around graphene barrier surrounding the interconnect. An interconnect structure having a wrap-all-around graphene barrier is also provided.

Abstract: A semiconductor wafer includes a first substrate and a first etch stop layer formed on the first substrate. The etch stop layer has an opening. The semiconductor wafer further includes a second substrate and a second etch stop layer formed on the second substrate. The first substrate is bonded on top of the second substrate such that the first etch stop layer is positioned between the first substrate and the second substrate. A trench is formed in the opening.

Abstract: A tray assembly includes a tray having a top side, an underside opposite the top side, and a plurality of protrusions extending from the underside. Each protrusion defines a recess in the top side and has a bottom wall and a contoured surface connecting the bottom wall to the top side. The tray assembly also includes a diffuser in the form of a plate with a plurality of apertures therethrough. The diffuser is couplable to the tray and positionable a spaced distance above the top side of the tray.

Abstract: Compressive and tensile stress is induced, respectively, on semiconductor fins in the pFET and nFET regions of a monolithic semiconductor structure including FinFETs. A tensile stressor is formed from dielectric material and a second, compressive stressor is formed from metal. The stressors may be formed in fin cut regions of the monolithic semiconductor structure and are configured to provide stress in the direction of FinFET current flow. The dielectric material may be deposited on the monolithic semiconductor structure and later removed from the fin cut regions of the pFET region. Metal exhibiting compressive residual stress is then deposited in the fin cut regions from which the dielectric material was removed. Gate cut regions may also be filled with the dielectric stressor material to impart substantially uniaxial tensile stress perpendicular to the semiconductor fins and perpendicular to electrical current flow.

Abstract: A method and structure of forming air gaps with a sidewall image transfer process such as self-aligned double patterning to reduce capacitance and resistance. In these methods and structures, the spacer is a metal.

Abstract: A technique relates to a semiconductor device. Mandrels are formed on a substrate, the mandrels including a first metal layer. A second metal layer is formed on the substrate adjacent to the first metal layer, the first and second metal layers being separated by spacer material.

Abstract: Methods for treating eye diseases associated with inflammation and/or vascular proliferation in subjects are disclosed. The methods include administering therapeutically effective amounts of a tranilast compound, in particular (E)-2-[[3-(3-Methoxy-4-propargyloxy)phenyl)-1-oxo-2-propenyl]amino]benzoic acid or (E)-2-[[3,4-Bis(difluoromethoxy)phenyl)-1-oxo-2-propenyl]amino]benzoic acid or pharmaceutically acceptable salts or solvates thereof.

Abstract: Disclosed herein are methods and compositions related to coagulation factor complexes comprising a coagulation factor; a fusion protein; and a modifying molecule, wherein the modifying molecule is coupled to the coagulation factor in such a way as to allow binding by the fusion protein, thereby creating a modified coagulation factor; wherein the modilied coagulation factor and the fusion protein interact in at least two independent sites.

Abstract: This disclosure relates to systems and methods for ultrasonic lens cleaning. In an example, an ultrasonic lens cleaning system can be configured to apply sequences that include at least one driver signal adapted to drive a transducer adaptively coupled to a top cover. The transducer can be excited based on the sequences to vibrate the top cover to remove a contaminant from a surface of the top cover. The applying of the sequences can include applying a first sequence to the transducer based on a first set of sequence parameters, applying a second sequence to the transducer based on a second set of sequence parameters, and applying a third sequence to the transducer based on a third set of sequence parameters.

Abstract: Disclosed herein are methods and systems for the production of hydrogen-containing compounds, such as ammonia and urea from a product stream of a fuel cell unit. The production of ammonia and optionally urea can also include a net power production. Alternatively, the hydrogen stream from the fuel cell unit can be directed to the production of synthetic hydrocarbons liquids.

Abstract: Compressive and tensile stress is induced, respectively, on semiconductor fins in the pFET and nFET regions of a monolithic semiconductor structure including FinFETs. A tensile stressor is formed from dielectric material and a second, compressive stressor is formed from metal. The stressors may be formed in fin cut regions of the monolithic semiconductor structure and are configured to provide stress in the direction of FinFET current flow. The dielectric material may be deposited on the monolithic semiconductor structure and later removed from the fin cut regions of the pFET region. Metal exhibiting compressive residual stress is then deposited in the fin cut regions from which the dielectric material was removed. Gate cut regions may also be filled with the dielectric stressor material to impart substantially uniaxial tensile stress perpendicular to the semiconductor fins and perpendicular to electrical current flow.

Abstract: A speed control system operable to control a motor vehicle to operate in accordance with a set-speed value, the control means being operable to allow a user to adjust the set-speed value by user actuation of a vehicle brake control or a vehicle accelerator control.

Abstract: The present invention provides interconnects with self-forming wrap-all-around graphene barrier layer. In one aspect, a method of forming an interconnect structure is provided. The method includes: patterning at least one trench in a dielectric; forming an interconnect in the at least one trench embedded in the dielectric; and forming a wrap-all-around graphene barrier surrounding the interconnect. An interconnect structure having a wrap-all-around graphene barrier is also provided.

Abstract: Semiconductor devices and methods to fabricate the devices are provided. For example, a semiconductor device includes a back-end-of-line (BEOL) structure formed on a semiconductor substrate. The BEOL structure further includes at least one metallization layer comprising a pattern of elongated parallel metal lines. The pattern of elongated metal lines comprises a plurality of metal lines having a minimum width and at least one wider metal line having a width which is greater than the minimum width.

Abstract: A system and method for recording video healthcare information of an individual under care without deleting data, includes a device for capturing data and configured to transmit a signal identifying the device, a memory for storing rules, a buffer, a database; and a processor. The processor receives the device identification signal and said data, and retrieves the rules from the memory. Based on the rules, the processor determines, whether the data is to be stored in the database or the buffer. Based on the content of the data, the processor determines the device location, the data recordation time and date, whether the individual under care is identified, and the individual's activity, and based on the rules and the location, time and date, individual identification, and activity, whether the data is proof of service delivery data to be stored in the database or eliminated from the buffer.

Abstract: Methods for treating eye diseases associated with inflammation and/or vascular proliferation in subjects are disclosed. The methods include administering therapeutically effective amounts of a tranilast compound, in particular (E)-2-[[3-(3-Methoxy-4-propargyloxy)phenyl)-1-oxo-2-propenyl]amino]benzoic acid or (E)-2-[[3,4-Bis(difluoromethoxy)phenyl)-1-oxo-2-propenyl]amino]benzoic acid or pharmaceutically acceptable salts or solvates thereof.

Abstract: Compressive and tensile stress is induced, respectively, on semiconductor fins in the pFET and nFET regions of a monolithic semiconductor structure including FinFETs. A tensile stressor is formed from dielectric material and a second, compressive stressor is formed from metal. The stressors may be formed in fin cut regions of the monolithic semiconductor structure and are configured to provide stress in the direction of FinFET current flow. The dielectric material may be deposited on the monolithic semiconductor structure and later removed from the fin cut regions of the pFET region. Metal exhibiting compressive residual stress is then deposited in the fin cut regions from which the dielectric material was removed. Gate cut regions may also be filled with the dielectric stressor material to impart substantially uniaxial tensile stress perpendicular to the semiconductor fins and perpendicular to electrical current flow.