Abstract: Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

Abstract: The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.

Abstract: Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

Abstract: Systems and methods are described for depositing a TiN liner layer and a cobalt seed layer on a semiconductor wafer in a cobalt metallization process. In some embodiments the wafer is cooled after deposition of the TiN liner layer and/or the cobalt seed layer. In some embodiments the TiN liner layer and cobalt seed layer are deposited in process modules that are part of a semiconductor processing apparatus that also includes one or more modules for cooling the substrate. In some embodiments the cobalt seed layer may comprise a mixture of TiN and cobalt, a nanolaminate of TiN and cobalt layers or a graded TiN/Co layer.

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

Abstract: The present disclosure relates to methods and apparatuses for depositing a conductive layer on another conductive layer of a substrate. The method comprises providing the substrate comprising the first conductive layer in a reaction chamber, providing a cleaning agent comprising a metal halide into the reaction chamber in a vapor phase to clean the substrate and providing a second material precursor into the reaction chamber in a vapor phase to deposit the second conductive layer on the first conductive layer. The disclosure further relates to a method of forming a semiconductor structure and to a semiconductor processing assembly.

Abstract: Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method comprises filling the gap with a metal-containing material.

Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.