Abstract: A semiconductor device may include an IC, and lead frame contact areas adjacent the IC. Each lead frame contact area may have a lead opening. The semiconductor device may include bond wires, each bond wire coupling a respective lead frame contact area with the IC. The semiconductor device may include encapsulation material surrounding the IC, the lead frame contact areas, and the bond wires, and leads. Each lead may extend through a respective lead opening and outwardly from the encapsulation material.

Abstract: A semiconductor device may include a multi-layer interconnect board having in stacked relation a lower conductive layer, a dielectric layer, and an upper conductive layer. The dielectric layer may have a recess formed with a bottom and sloping sidewall extending upwardly from the bottom. The upper conductive layer may include upper conductive traces extending across the sloping sidewall, and the lower conductive layer may include lower conductive traces. The semiconductor device may include vias extending between the lower and upper conductive layers, an IC carried by the multi-layer interconnect board in the recess, bond wires coupling upper conductive traces to the IC, and encapsulation material adjacent the IC and adjacent portions of the multi-layer interconnect board.

Abstract: An integrated circuit (IC) device may include a leadframe and an IC die having a first surface coupled to the lead frame and a second surface opposite the first surface. The IC device may further include a conductive clip including a first portion coupled to the second surface of the IC die, a second portion coupled to the first portion and extending laterally away from the IC die, and at least one flexible lead coupled to the second portion and looping back under the second portion toward the leadframe. Furthermore, a package may be over the leadframe, IC die, and conductive clip and have an opening therein exposing the at least one flexible lead.

Abstract: One or more embodiments are directed to semiconductor packages, including stacked packages, with one or more cantilever pads. In one embodiment a recess is located in a substrate of the package facing the cantilever pad. The cantilever pad includes a conductive pad on which a conductive ball is formed. The cantilever pad is configured to absorb stresses acting on the package.

Abstract: One or more embodiments are directed to semiconductor packages with one or more cantilever pads. In one embodiment a recess is located in a substrate of the package facing the cantilever pad. The cantilever pad includes a conductive pad on which a conductive ball is formed. The cantilever pad is configured to absorb stresses acting on the package.

Abstract: Embodiments of the present disclosure are directed to a leadframe package with recesses formed in outer surface of the leads. The recesses are filled with a filler material, such as solder. The filler material in the recesses provides a wetable surface for filler material, such as solder, to adhere to during mounting of the package to another device, such as a printed circuit board (PCB). This enables strong solder joints between the leads of the package and the PCB. It also enables improved visual inspection of the solder joints after the package has been mounted.

Abstract: A surface mounting device has one body of semiconductor material such as an ASIC, and a package surrounding the body. The package has a base region carrying the body, a cap and contact terminals. The base region has a Young's modulus lower than 5 MPa. For forming the device, the body is attached to a supporting frame including contact terminals and a die pad, separated by cavities; bonding wires are soldered to the body and to the contact terminals; an elastic material is molded so as to surround at least in part lateral sides of the body, fill the cavities of the supporting frame and cover the ends of the bonding wires on the contact terminals; and a cap is fixed to the base region. The die pad is then etched away.

Abstract: A method for making a semiconductor device may include bonding a top lead frame component, having recesses, with a bottom lead frame component to form a lead frame, the top and bottom lead frame components each including metal. The method may include mounting an IC on the lead frame, encapsulating the IC and the lead frame, and removing portions of the bottom lead frame component to define contacts for the IC.

Abstract: A semiconductor device may include an IC, and lead frame contact areas adjacent the IC. Each lead frame contact area may have a lead opening. The semiconductor device may include bond wires, each bond wire coupling a respective lead frame contact area with the IC. The semiconductor device may include encapsulation material surrounding the IC, the lead frame contact areas, and the bond wires, and leads. Each lead may extend through a respective lead opening and outwardly from the encapsulation material.

Abstract: A semiconductor device may include an integrated circuit (IC), and lead frame contact areas adjacent the IC. Each lead frame contact area may have an opening therein. The semiconductor device may include bond wires, each bond wire coupling a respective lead frame contact area with the IC. The semiconductor device may also include encapsulation material surrounding the IC, the lead frame contact areas, and the bond wires. Solder balls are within the respective opening.