Abstract: A shower system provides a corner shower unit which includes a track defined along a vertical height thereof. A lumbar support and a multitude of showerheads are mounted to the track for vertical adjustment. The lumbar support permits a bather standing in the shower to lean against the lumbar support while a multitude of spray jets provide a massage action directly to the bather. A steam generation system is incorporated into the corner shower unit to mist steam from steam ports such that shower may also be utilized as a steam room.

Abstract: A handheld sprayer system includes a spray nozzle side having a spray nozzle opposite a sprayer back side having a recessed area to receive hygiene tools. The spray head includes a buoyancy volume which permits the handheld shower sprayer system to float.

Abstract: A screwdriver is equipped with a striking surface. The striking surface is partially embedded within the screwdriver handle and includes an exposed face portion which is offset from a longitudinal axis. A shank protrudes from the handle along the longitudinal axis and includes a receiving end for a bit. The screwdriver functions as both a screwdriver and a hammer.

Abstract: The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.

Abstract: A selective spacer to prevent metal oxide formation during polycide reoxidation of a feature such as an electrode and a method for forming the selective spacer are disclosed. A material such as a thin silicon nitride or an amorphous silicon film is selectively deposited on the electrode by limiting deposition time to a period less than an incubation time for the material on silicon dioxide near the electrode. The spacer is deposited only on the electrode and not on surrounding silicon dioxide. The spacer serves as a barrier for the electrode during subsequent oxidation to prevent metal oxide formation while allowing oxidation to take place over the silicon dioxide.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: A level assembly includes a housing having a level mounted within. The housing includes a first arm and a second arm slidably attached to the housing. The first and second arms are both stored in storage positions. Fastener locators associated with each arm are both stored in storage positions. During use the fastener locators are pivoted to an extended position. If additional distance between the fastener locators is needed the first and second arms can also be extended by sliding them along another axis relative to the housing.

Abstract: The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.

Abstract: A hammer equipped with a mallet attachment and a measuring scale. The mallet attachment includes a surface cap for covering the striking surface of the hammer such that the hammer is visible as a mallet which provides a resilient surface. A surface cap holder stores the surface cap when using the hammer. The measuring scale is located on a grip which surrounds a hammer shank. The hammer functions as both a hammer and a mallet.

Abstract: A screwdriver is equipped with a striking surface. The striking surface is partially embedded within the screwdriver handle and includes an exposed face portion which is offset from a longitudinal axis. A shank protrudes from the handle along the longitudinal axis and includes a receiving end for a bit. The screwdriver functions as both a screwdriver and a hammer.

Abstract: A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

Abstract: A selective spacer to prevent metal oxide formation during polycide reoxidation of a feature such as an electrode and a method for forming the selective spacer are disclosed. A material such as a thin silicon nitride or an amorphous silicon film is selectively deposited on the electrode by limiting deposition time to a period less than an incubation time for the material on silicon dioxide near the electrode. The spacer is deposited only on the electrode and not on surrounding silicon dioxide. The spacer serves as a barrier for the electrode during subsequent oxidation to prevent metal oxide formation while allowing oxidation to take place over the silicon dioxide.

Abstract: A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

Abstract: The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.

Abstract: In one aspect, the invention includes a method of forming a gated semiconductor assembly, comprising: a) forming a silicon nitride layer over and against a floating gate; and b) forming a control gate over the silicon nitride layer. In another aspect, the invention includes a method of forming a gated semiconductor assembly, comprising: a) forming a floating gate layer over a substrate; b) forming a silicon nitride layer over the floating gate layer, the silicon nitride layer comprising a first portion and a second portion elevationally displaced from the first portion, the first portion having a greater stoichiometric amount of silicon than the second portion; and c) forming a control gate over the silicon nitride layer.

Abstract: A high dielectric constant (HDC) capacitive dielectric film is fabricated in a capacitor structure using relatively high pressure surface treatments. After forming the HDC capacitive dielectric film on a supporting bottom plate electrode structure, a surface treatment comprising oxidation, at a pressure of at least approximately one atmosphere and temperatures of approximately at least 200 degrees Celsius densifies/conditions the HDC capacitive dielectric film. When using a polysilicon, crystalline silicon, hemispherical grain polysilicon, germanium, or silicon-germanium bottom plate electrode, a relatively high pressure surface treatment, comprising rapid thermal nitridation or oxidation, is used after forming the bottom plate electrode, forming a diffusion barrier layer in a controlled manner.

Abstract: A method of forming an encapsulating spacer prior to gate stack reoxidation is provided which prevents the formation of undesirable metal oxides during reoxidation. A material such as a thin silicon nitride or amorphous silicon is selectively deposited by limiting deposition time to a period less than incubation time. As a result spacers are formed without having to perform an additional etch act.

Abstract: Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta2O5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta2O5 capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta2O5 in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode comprises a conductive metal oxide. A more preferred second capacitor electrode comprises a conductive silicon comprising layer, over a conductive titanium comprising layer, over a conductive metal oxide layer. A preferred first capacitor electrode comprises a conductively doped Si—Ge alloy. Preferably, a Si3N4 layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.