Patents by Inventor Jen-Hao Yeh
Jen-Hao Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240126327Abstract: The present disclosure provides an electronic wearable device. The electronic wearable device includes a first module having a first contact and a second module having a second contact. The first contact is configured to keep electrical connection with the second contact in moving with respect to each other during a wearing period.Type: ApplicationFiled: October 14, 2022Publication date: April 18, 2024Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chao Wei LIU, Wei-Hao CHANG, Yung-I YEH, Jen-Chieh KAO, Tun-Ching PI, Ming-Hung CHEN, Hui-Ping JIAN, Shang-Lin WU
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Publication number: 20230380044Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Inventors: Yen-Shuo SU, Jen-Hao YEH, Jhan-Hong YEH, Ting-Ya CHENG, Henry Yee Shian TONG, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
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Patent number: 11800626Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.Type: GrantFiled: July 26, 2022Date of Patent: October 24, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yen-Shuo Su, Jen-Hao Yeh, Jhan-Hong Yeh, Ting-Ya Cheng, Henry Yee Shian Tong, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
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Publication number: 20230308313Abstract: A communication apparatus and an associated method are disclosed. The communication apparatus includes differential input ports; a signal pairing circuit, arranged for coupling the differential input ports to a receiving circuit, wherein when the signal pairing circuit operates in a first mode, a positive input port and a negative input port of the differential input ports correspondingly electrically couple to a positive input terminal and a negative input terminal of the receiving circuit, when the signal pairing circuit operates in a second mode, the positive input port and the negative input port of the differential input ports correspondingly electrically couple to the negative input terminal and the positive input terminal of the receiving circuit; a processor circuit, arranged for determining whether the decoded signal includes a specific code before the timer is time out and generating a determination result; and control the signal pairing circuit according to the determination result.Type: ApplicationFiled: March 19, 2023Publication date: September 28, 2023Inventors: TE LUNG FANG, CHIH CHIEH YEN, JEN-HAO YEH, WEI-YI WEI
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Patent number: 11737200Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.Type: GrantFiled: April 12, 2021Date of Patent: August 22, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Patent number: 11723141Abstract: A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.Type: GrantFiled: August 8, 2022Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Publication number: 20220386440Abstract: A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.Type: ApplicationFiled: August 8, 2022Publication date: December 1, 2022Inventors: Chun-Lin Louis CHANG, Jen-Hao YEH, Tzung-Chi FU, Bo-Tsun LIU, Lin-Jui CHEN, Po-Chung CHENG
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Publication number: 20220361311Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Inventors: Yen-Shuo SU, Jen-Hao YEH, Jhan-Hong YEH, Ting-Ya CHENG, Yee-Shian Henry TONG, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
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Patent number: 11452197Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.Type: GrantFiled: October 16, 2019Date of Patent: September 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Shuo Su, Jen-Hao Yeh, Jhan-Hong Yeh, Ting-Ya Cheng, Yee-Shian Henry Tong, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
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Patent number: 11419203Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.Type: GrantFiled: February 8, 2021Date of Patent: August 16, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Publication number: 20210235572Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.Type: ApplicationFiled: April 12, 2021Publication date: July 29, 2021Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Patent number: 11069805Abstract: A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.Type: GrantFiled: December 5, 2019Date of Patent: July 20, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Hao Yeh, Chih-Chang Cheng, Ru-Yi Su, Ker Hsiao Huo, Po-Chih Chen, Fu-Chih Yang, Chun-Lin Tsai
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Patent number: 11069794Abstract: A transistor production method includes etching a semiconductor substrate to form at least one upper trench portion, sequentially depositing first and second insulating materials over the substrate and partially removing the second insulating material, etching the substrate to form a lower trench portion, depositing a third insulating material over the substrate, disposing a polycrystalline silicon (pc-Si) material in the trench portions and partially removing such material, depositing a fourth insulating material over the substrate and partially removing the third and fourth insulating materials, removing the second insulating material and disposing another pc-Si material in the upper trench portion, and forming a well and a source on the substrate. A trench power transistor thus produced is also disclosed.Type: GrantFiled: September 24, 2019Date of Patent: July 20, 2021Assignee: Leadpower-semi Co., LTD.Inventors: Po-Hsien Li, Jen-Hao Yeh, Hsin-Yen Chiu
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Publication number: 20210168923Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.Type: ApplicationFiled: February 8, 2021Publication date: June 3, 2021Inventors: Chun-Lin Louis CHANG, Jen-Hao YEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
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Patent number: 10980100Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.Type: GrantFiled: December 20, 2019Date of Patent: April 13, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Patent number: 10917959Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.Type: GrantFiled: September 29, 2019Date of Patent: February 9, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Patent number: 10852191Abstract: A light source system is provided. The light source system is capable of measuring a polarization angle and includes a light source configured to emit an original light beam, and the original light beam has an original polarization angle. The light source system further includes an amplifying module configured to amplify the original light beam and generate a forward beam for hitting a target, and the forward beam has a forward polarization angle that is equal to the original polarization angle. The light source system further includes a polarization measurement unit, and the polarization measurement unit includes a first polarization measurement module configured to receive a first return beam and measure a first polarization angle of the first return beam. The first return beam is reflected from the target.Type: GrantFiled: June 12, 2019Date of Patent: December 1, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jen-Hao Yeh, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
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Patent number: 10749006Abstract: A trench power transistor includes a semiconductor body having opposite first and second surfaces, and including at least one active region. Such region includes a trench electrode structure, a well, and a source. The trench electrode structure has an electrode trench recessed from the first surface, and includes first, second, and third insulating layers sequentially disposed over bottom and surrounding walls of the electrode trench, a shield electrode enclosed by the third insulating layer, a fourth insulating layer disposed on the first, second, and third insulating layers, and a gate electrode surrounded by the fourth insulating layer. The second insulating layer made of a nitride material and the fourth insulating layer are different in material. A production method of the transistor is also disclosed.Type: GrantFiled: September 11, 2019Date of Patent: August 18, 2020Assignee: LEADPOWER-SEMI CO., LTD.Inventors: Po-Hsien Li, Jen-Hao Yeh, Hsin-Yen Chiu
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Publication number: 20200227537Abstract: A transistor production method includes etching a semiconductor substrate to form at least one upper trench portion, sequentially depositing first and second insulating materials over the substrate and partially removing the second insulating material, etching the substrate to form a lower trench portion, depositing a third insulating material over the substrate, disposing a polycrystalline silicon (pc-Si) material in the trench portions and partially removing such material, depositing a fourth insulating material over the substrate and partially removing the third and fourth insulating materials, removing the second insulating material and disposing another pc-Si material in the upper trench portion, and forming a well and a source on the substrate. A trench power transistor thus produced is also disclosed.Type: ApplicationFiled: September 24, 2019Publication date: July 16, 2020Inventors: Po-Hsien LI, Jen-Hao YEH, Hsin-Yen CHIU
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Publication number: 20200227526Abstract: A trench power transistor includes a semiconductor body having opposite first and second surfaces, and including at least one active region. Such region includes a trench electrode structure, a well, and a source. The trench electrode structure has an electrode trench recessed from the first surface, and includes first, second, and third insulating layers sequentially disposed over bottom and surrounding walls of the electrode trench, a shield electrode enclosed by the third insulating layer, a fourth insulating layer disposed on the first, second, and third insulating layers, and a gate electrode surrounded by the fourth insulating layer. The second insulating layer made of a nitride material and the fourth insulating layer are different in material. A production method of the transistor is also disclosed.Type: ApplicationFiled: September 11, 2019Publication date: July 16, 2020Inventors: Po-Hsien LI, Jen-Hao Yeh, Hsin-Yen Chiu